Improving dynamic characteristics for IGBTs by using interleaved trench gate

doi:10.1088/1674-1056/ace15d

中国物理B ›› 2023, Vol. 32 ›› Issue (12): 128503-128503.doi: 10.1088/1674-1056/ace15d

Improving dynamic characteristics for IGBTs by using interleaved trench gate

Yi-Fan Wu(吴毅帆), Gao-Qiang Deng(邓高强)^†, Chen Tan(谭琛), Shi-Wei Liang(梁世维), and Jun Wang(王俊)

College of Electrical and Information Engineering, Hunan University, Changsha 410082, China

收稿日期:2023-04-18 修回日期:2023-06-20 接受日期:2023-06-25 出版日期:2023-11-14 发布日期:2023-11-22
通讯作者: Gao-Qiang Deng E-mail:gqdeng@hnu.edu.cn
基金资助:
Project supported by the Natural Science Foundation of Hunan Province, China (Grant No.2023JJ40161), the Natural Science Foundation of Changsha, China (Grant No.kq2202163), the National Natural Science Foundation of China (Grant No.U21A20499), and the Fundamental Research Funds for the Central Universities, China (Grant No.531118010735).

Improving dynamic characteristics for IGBTs by using interleaved trench gate

Yi-Fan Wu(吴毅帆), Gao-Qiang Deng(邓高强)^†, Chen Tan(谭琛), Shi-Wei Liang(梁世维), and Jun Wang(王俊)

College of Electrical and Information Engineering, Hunan University, Changsha 410082, China

Received:2023-04-18 Revised:2023-06-20 Accepted:2023-06-25 Online:2023-11-14 Published:2023-11-22
Contact: Gao-Qiang Deng E-mail:gqdeng@hnu.edu.cn
Supported by:
Project supported by the Natural Science Foundation of Hunan Province, China (Grant No.2023JJ40161), the Natural Science Foundation of Changsha, China (Grant No.kq2202163), the National Natural Science Foundation of China (Grant No.U21A20499), and the Fundamental Research Funds for the Central Universities, China (Grant No.531118010735).

摘要/Abstract

摘要： A novel trench insulated gate bipolar transistor (IGBT) with improved dynamic characteristics is proposed and investigated. The poly gate and poly emitter of the proposed IGBT are arranged alternately along the trench. A self-biased p-MOSFET is formed on the emitter side. Owing to this unique three-dimensional (3D) trench architecture, both the turn-off characteristic and the turn-on characteristic can be greatly improved. At the turn-off moment, the maximum electric field and impact ionization rate of the proposed IGBT decrease and the dynamic avalanche (DA) is suppressed. Comparing with the carrier-stored trench gate bipolar transistor (CSTBT), the turn-off loss (E_off) of the proposed IGBT also decreases by 31% at the same ON-state voltage. At the turn-on moment, the built-in p-MOSFET reduces the reverse displacement current (I_{G_dis}), which is conducive to lowing dI_C/dt. As a result, compared with the CSTBT with the same turn-on loss (E_on), at I_C = 20 A/cm², the proposed IGBT decreases by 35% of collector surge current (I_surge) and 52% of d I_C/dt.

关键词: insulated gate bipolar transistor (IGBT), dynamic avalanche (DA), dI_C/dt

Abstract: A novel trench insulated gate bipolar transistor (IGBT) with improved dynamic characteristics is proposed and investigated. The poly gate and poly emitter of the proposed IGBT are arranged alternately along the trench. A self-biased p-MOSFET is formed on the emitter side. Owing to this unique three-dimensional (3D) trench architecture, both the turn-off characteristic and the turn-on characteristic can be greatly improved. At the turn-off moment, the maximum electric field and impact ionization rate of the proposed IGBT decrease and the dynamic avalanche (DA) is suppressed. Comparing with the carrier-stored trench gate bipolar transistor (CSTBT), the turn-off loss (E_off) of the proposed IGBT also decreases by 31% at the same ON-state voltage. At the turn-on moment, the built-in p-MOSFET reduces the reverse displacement current (I_{G_dis}), which is conducive to lowing dI_C/dt. As a result, compared with the CSTBT with the same turn-on loss (E_on), at I_C = 20 A/cm², the proposed IGBT decreases by 35% of collector surge current (I_surge) and 52% of d I_C/dt.

Key words: insulated gate bipolar transistor (IGBT), dynamic avalanche (DA), dI_C/dt

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Tv (Field effect devices) 85.30.Pq (Bipolar transistors)

Yi-Fan Wu(吴毅帆), Gao-Qiang Deng(邓高强), Chen Tan(谭琛), Shi-Wei Liang(梁世维), and Jun Wang(王俊). Improving dynamic characteristics for IGBTs by using interleaved trench gate[J]. 中国物理B, 2023, 32(12): 128503-128503.

Yi-Fan Wu(吴毅帆), Gao-Qiang Deng(邓高强), Chen Tan(谭琛), Shi-Wei Liang(梁世维), and Jun Wang(王俊). Improving dynamic characteristics for IGBTs by using interleaved trench gate[J]. Chin. Phys. B, 2023, 32(12): 128503-128503.

参考文献

[1] Rezwan S, Hossain S, Tasnim S and Rahman M M 2018 International Conference on Smart Grid and Clean Energy Technologies (ICSGCE), May 29--June 01, Kajang, Malaysia, p. 112
[2] Yang J, He Z Y, Ke J K and Xie M H 2019 IEEE Trans. Power Electron. 34 2082
[3] Ji I H, Cho K H, Lee S C, Kim S S, Oh K H, Yun C M and Han M K 2007 Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, May 27--31, Jeju, Korea (South), p. 145
[4] Laska T, Munzer M, Pfirsch F, Schaeffer C and Schmidt T 2000 Proceedings of the 12th International Symposium on Power Semiconductor Devices and IC's, May 22--25, Toulouse, France, p. 355
[5] Kitagawa M, Omura I, Hasegawa S, Inoue T and Nakagawa A 1993 Proceedings of IEEE International Electron Devices Meeting, December 5--8, Washington, DC, USA, p. 679
[6] Inoue T, Ninomiya H, Sugiyama K, Matsusihta K, Ogura T and Ohashi H 2002 Proceedings of the 14th International Symposium on Power Semiconductor Devices and IC's (ISPSD), June 04--07, Santa Fe, NM, USA, p. 49
[7] Deng G Q, Luo X R, Sun T, Zhao Z Y, Fan D and Zhang B 2019 IEEE Trans. Electron Dev. 66 2681
[8] Takahashi H, Haruguchi H, Hagino H and Yamada T 1996 Proceedings of the 8th International Symposium on Power Semiconductor Devices and IC's, May 23--23, Maui, HI, USA, p. 349
[9] Tomomatsu Y, Kusunoki S, Satoh K, Yamada J, Yu Y, Donlon J F, Iwamoto H and Motto E R 2001 36th Annual Meeting of the Industry-Application-Society (IAS), September 30--October 4, Chicago, IL, USA, p. 1060
[10] Zhang J P, Deng H N, Zhu R R, Li Z H and Zhang B 2023 Chin. Phys. B 32 038501
[11] Zhang J P, Li Z H, Zhang B and Li Z J 2014 Chin. Phys. B 23 088504
[12] Yu Q Q, Liu H N, Luo J J, Li B, Wang L X and Han Z H 2017 Chin. Phys. B 26 038502
[13] Ogura T, Ninomiya H, Sugiyama K and Inoue T 2004 IEEE Trans. Electron Dev. 51 629
[14] Luo P, Madathil S N E, Nishizawa S and Saito W 2019 65th IEEE International Electron Devices Meeting (IEDM), December 7--11, Francisco, CA, USA, p. 12.3.1
[15] Luo P, Madathil S N E, Nishizawa S and Saito W 2020 IEEE Trans. Electron Dev. 67 3691
[16] Onozawa Y, Nakano H, Otsuki M, Yoshikawa K, Miyasaka T and Seki Y 2007 Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, May 27--31, Jeju, Korea (South), p. 13
[17] Ohi K, Ikura Y, Yoshimoto A, Sugimura K, Onozawa Y, Takahashi H and Otsuki M 2015 27th International Symposium on Power Semiconductor Devices and IC's (ISPSD), May 10--14, Hong Kong, China, p. 25
[18] Xu H, Yang Y F, Tan J J, Zhu H, Sun Q Q and Zhang D W 2022 IEEE Trans. Electron Dev. 69 5450
[19] Feng H, Yang W T, Onozawa Y, Yoshimura T, Tamenori A and Sin J K O 2015 IEEE Trans. Electron Dev. 62 2555
[20] Chen R X, Yi B, Kong M F and Chen X B 2019 13th IEEE International Conference on ASIC (ASICON), October 29--November 1, Chongqing, China, p. 1
[21] Deng G Q, Ma Z, Luo X R, Xie X T, Li C C and Ng W T 2021 IEEE Trans. Electron Dev. 68 5326
[22] Antoniou M, Lophitis N, Udrea F, Bauer F, Nistor I, Bellini M and Rahimo M 2015 27^th International Symposium on Power Semiconductor Devices and IC's (ISPSD), May 10--14, Hong Kong, China, p. 21
[23] Antoniou M, Lophitis N, Bauer F, Nistor I, Bellini M, Rahimo M, Amaratunga G and Udrea F 2015 IEEE Electron Dev. Lett. 36 823

Improving dynamic characteristics for IGBTs by using interleaved trench gate

Improving dynamic characteristics for IGBTs by using interleaved trench gate

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 3

Metrics

本文评价

推荐阅读 0

[1]	Baoxing Duan(段宝兴), Kaishun Luo(罗开顺), and Yintang Yang(杨银堂). SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current[J]. 中国物理B, 2023, 32(4): 47702-047702.
[2]	Lijuan Wu(吴丽娟), Heng Liu(刘恒), Xuanting Song(宋宣廷), Xing Chen(陈星), Jinsheng Zeng(曾金胜), Tao Qiu(邱滔), and Banghui Zhang(张帮会). A 4H-SiC trench IGBT with controllable hole-extracting path for low loss[J]. 中国物理B, 2023, 32(4): 48503-048503.
[3]	喻巧群, 陆江, 刘海南, 罗家俊, 李博, 王立新, 韩郑生. Superjunction nanoscale partially narrow mesa IGBT towards superior performance[J]. 中国物理B, 2017, 26(3): 38502-038502.