Superjunction nanoscale partially narrow mesa IGBT towards superior performance

doi:10.1088/1674-1056/26/3/038502

中国物理B ›› 2017, Vol. 26 ›› Issue (3): 38502-038502.doi: 10.1088/1674-1056/26/3/038502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Superjunction nanoscale partially narrow mesa IGBT towards superior performance

Qiao-Qun Yu(喻巧群), Jiang Lu(陆江), Hai-Nan Liu(刘海南), Jia-Jun Luo(罗家俊), Bo Li(李博), Li-Xin Wang(王立新), Zheng-Sheng Han(韩郑生)

Institute of Microelectronics of Chinese Academy of Science, Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2016-11-09 修回日期:2016-12-19 出版日期:2017-03-05 发布日期:2017-03-05
通讯作者: Jiang Lu E-mail:lujiang@ime.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61404161).

Superjunction nanoscale partially narrow mesa IGBT towards superior performance

Qiao-Qun Yu(喻巧群), Jiang Lu(陆江), Hai-Nan Liu(刘海南), Jia-Jun Luo(罗家俊), Bo Li(李博), Li-Xin Wang(王立新), Zheng-Sheng Han(韩郑生)

Institute of Microelectronics of Chinese Academy of Science, Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100029, China

Received:2016-11-09 Revised:2016-12-19 Online:2017-03-05 Published:2017-03-05
Contact: Jiang Lu E-mail:lujiang@ime.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61404161).

摘要/Abstract

摘要： We present a detailed study of a superjunction (SJ) nanoscale partially narrow mesa (PNM) insulated gate bipolar transistor (IGBT) structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage (V_ce(sat)) and low turn-off loss (E_off) while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the V_ce(sat) of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT. Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the E_off is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between V_ce(sat) and E_off is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering (CIBL) effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.

关键词: insulated gate bipolar transistor (IGBT), partially narrow mesa (PNM), superjunction (SJ), turn-off loss

Abstract: We present a detailed study of a superjunction (SJ) nanoscale partially narrow mesa (PNM) insulated gate bipolar transistor (IGBT) structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage (V_ce(sat)) and low turn-off loss (E_off) while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the V_ce(sat) of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT. Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the E_off is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between V_ce(sat) and E_off is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering (CIBL) effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.

Key words: insulated gate bipolar transistor (IGBT), partially narrow mesa (PNM), superjunction (SJ), turn-off loss

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Pq (Bipolar transistors) 85.30.Tv (Field effect devices)

喻巧群, 陆江, 刘海南, 罗家俊, 李博, 王立新, 韩郑生. Superjunction nanoscale partially narrow mesa IGBT towards superior performance[J]. 中国物理B, 2017, 26(3): 38502-038502.

Qiao-Qun Yu(喻巧群), Jiang Lu(陆江), Hai-Nan Liu(刘海南), Jia-Jun Luo(罗家俊), Bo Li(李博), Li-Xin Wang(王立新), Zheng-Sheng Han(韩郑生). Superjunction nanoscale partially narrow mesa IGBT towards superior performance[J]. Chin. Phys. B, 2017, 26(3): 38502-038502.

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Superjunction nanoscale partially narrow mesa IGBT towards superior performance

Superjunction nanoscale partially narrow mesa IGBT towards superior performance

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