Distinct behavior of electronic structure under uniaxial strain in BaFe2As2

doi:10.1088/1674-1056/acd8af

中国物理B ›› 2024, Vol. 33 ›› Issue (1): 17401-17401.doi: 10.1088/1674-1056/acd8af

Distinct behavior of electronic structure under uniaxial strain in BaFe₂As₂

Jiajun Li(李佳俊)^1,2,†, Giao Ngoc Phan^1,3,†, Xingyu Wang(王兴玉)^1,2,†, Fazhi Yang(杨发枝)^1,2, Quanxin Hu(胡全欣)^1,2, Ke Jia(贾可)^1,2,4, Jin Zhao(赵金)^1,2, Wenyao Liu(刘文尧)^1,2, Renjie Zhang(张任杰)^1,2, Youguo Shi(石友国)^1,2,4,5, Shiliang Li(李世亮)^1,2,5, Tian Qian(钱天)^1,5, and Hong Ding(丁洪)^1,3,6,‡

1 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China;
3 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China;
4 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
5 Songshan Lake Materials Laboratory, Dongguan 523808, China;
6 Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 201210, China

收稿日期:2023-04-06 修回日期:2023-05-24 接受日期:2023-05-25 出版日期:2023-12-13 发布日期:2023-12-20
通讯作者: Hong Ding E-mail:dingh@sjtu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11888101 and U1832202), the Chinese Academy of Sciences (Grant Nos. QYZDB-SSWSLH043, XDB28000000, and XDB33000000), the K. C. Wong Education Foundation (Grant No. GJTD-2018-01), and the Informatization Plan of Chinese Academy of Sciences (Grant No. CAS-WX2021SF-0102).

Distinct behavior of electronic structure under uniaxial strain in BaFe₂As₂

1 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physics, University of Chinese Academy of Sciences, Beijing 100190, China;
3 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China;
4 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
5 Songshan Lake Materials Laboratory, Dongguan 523808, China;
6 Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 201210, China

Received:2023-04-06 Revised:2023-05-24 Accepted:2023-05-25 Online:2023-12-13 Published:2023-12-20
Contact: Hong Ding E-mail:dingh@sjtu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11888101 and U1832202), the Chinese Academy of Sciences (Grant Nos. QYZDB-SSWSLH043, XDB28000000, and XDB33000000), the K. C. Wong Education Foundation (Grant No. GJTD-2018-01), and the Informatization Plan of Chinese Academy of Sciences (Grant No. CAS-WX2021SF-0102).

摘要/Abstract

摘要： We report a study of the electronic structure of BaFe₂As₂ under uniaxial strains using angle-resolved photoemission spectroscopy and transport measurements. Two electron bands at the M_Y point, with an energy splitting of 50 meV in the strain-free sample, shift downward and merge into each other under a large uniaxial strain, while three hole bands at the $\varGamma$ point shift downward together. However, we also observed an enhancement of the resistance anisotropy under uniaxial strains by electrical transport measurements, implying that the applied strains strengthen the electronic nematic order in BaFe₂As₂. These observations suggest that the splitting of these two electron bands at the M_Y point is not caused by the nematic order in BaFe₂As₂.

关键词: iron-based superconductor, angle-resolved photoelectron spectroscopy, uniaxial strain, symmetry breaking

Abstract: We report a study of the electronic structure of BaFe₂As₂ under uniaxial strains using angle-resolved photoemission spectroscopy and transport measurements. Two electron bands at the M_Y point, with an energy splitting of 50 meV in the strain-free sample, shift downward and merge into each other under a large uniaxial strain, while three hole bands at the $\varGamma$ point shift downward together. However, we also observed an enhancement of the resistance anisotropy under uniaxial strains by electrical transport measurements, implying that the applied strains strengthen the electronic nematic order in BaFe₂As₂. These observations suggest that the splitting of these two electron bands at the M_Y point is not caused by the nematic order in BaFe₂As₂.

Key words: iron-based superconductor, angle-resolved photoelectron spectroscopy, uniaxial strain, symmetry breaking

中图分类号: (Electronic structure (photoemission, etc.))

74.25.Jb

74.25.F- (Transport properties)

Jiajun Li(李佳俊), Giao Ngoc Phan, Xingyu Wang(王兴玉), Fazhi Yang(杨发枝), Quanxin Hu(胡全欣), Ke Jia(贾可), Jin Zhao(赵金), Wenyao Liu(刘文尧), Renjie Zhang(张任杰), Youguo Shi(石友国), Shiliang Li(李世亮), Tian Qian(钱天), and Hong Ding(丁洪). Distinct behavior of electronic structure under uniaxial strain in BaFe₂As₂[J]. 中国物理B, 2024, 33(1): 17401-17401.

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Distinct behavior of electronic structure under uniaxial strain in BaFe₂As₂

Distinct behavior of electronic structure under uniaxial strain in BaFe₂As₂

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