中国物理B ›› 2023, Vol. 32 ›› Issue (7): 77401-077401.doi: 10.1088/1674-1056/acca0e
Multiple surface states, nontrivial band topology, and antiferromagnetism in GdAuAl4Ge2
Chengcheng Zhang(张成成)1, Yuan Wang(王渊)1, Fayuan Zhang(张发远)1, Hongtao Rong(戎洪涛)1, Yongqing Cai(蔡永青)1, Le Wang(王乐)1, Xiao-Ming Ma(马小明)1, Shu Guo(郭抒)1, Zhongjia Chen(陈仲佳)2,3, Yanan Wang(王亚南)2,3, Zhicheng Jiang(江志诚)4, Yichen Yang(杨逸尘)4, Zhengtai Liu(刘正太)4, Mao Ye(叶茂)4, Junhao Lin(林君浩)1, Jiawei Mei(梅佳伟)1, Zhanyang Hao(郝占阳)1,†, Zijuan Xie(谢子娟)5,‡, and Chaoyu Chen(陈朝宇)1,§
- 1 Shenzhen Institute for Quantum Science and Engineering(SIQSE) and Department of Physics, Southern University of Science and Technology(SUSTech), Shenzhen 518055, China;
2 Songshan Lake Materials Laboratory, Dongguan 523000, China;
3 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
4 State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
5 International School of Microelectronics, Dongguan University of Technology, Dongguan 523000, China
Multiple surface states, nontrivial band topology, and antiferromagnetism in GdAuAl4Ge2
Chengcheng Zhang(张成成)1, Yuan Wang(王渊)1, Fayuan Zhang(张发远)1, Hongtao Rong(戎洪涛)1, Yongqing Cai(蔡永青)1, Le Wang(王乐)1, Xiao-Ming Ma(马小明)1, Shu Guo(郭抒)1, Zhongjia Chen(陈仲佳)2,3, Yanan Wang(王亚南)2,3, Zhicheng Jiang(江志诚)4, Yichen Yang(杨逸尘)4, Zhengtai Liu(刘正太)4, Mao Ye(叶茂)4, Junhao Lin(林君浩)1, Jiawei Mei(梅佳伟)1, Zhanyang Hao(郝占阳)1,†, Zijuan Xie(谢子娟)5,‡, and Chaoyu Chen(陈朝宇)1,§
- 1 Shenzhen Institute for Quantum Science and Engineering(SIQSE) and Department of Physics, Southern University of Science and Technology(SUSTech), Shenzhen 518055, China;
2 Songshan Lake Materials Laboratory, Dongguan 523000, China;
3 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
4 State Key Laboratory of Functional Materials for Informatics and Center for Excellence in Superconducting Electronics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
5 International School of Microelectronics, Dongguan University of Technology, Dongguan 523000, China
摘要： Magnetic topological states of matter provide a fertile playground for emerging topological physics and phenomena. The current main focus is on materials whose magnetism stems from 3d magnetic transition elements, e.g., MnBi$_{{2}}$Te$_{4}$, Fe$_{{3}}$Sn$_{{2}}$, and Co$_{3}$Sn$_{{2}}$S$_{2}$. In contrast, topological materials with the magnetism from rare earth elements remain largely unexplored. Here we report rare earth antiferromagnet GdAuAl$_{{4}}$Ge$_{{2}}$ as a candidate magnetic topological metal. Angle resolved photoemission spectroscopy (ARPES) and first-principles calculations have revealed multiple bulk bands crossing the Fermi level and pairs of low energy surface states. According to the parity and Wannier charge center analyses, these bulk bands possess nontrivial $Z_{{2}}$ topology, establishing a strong topological insulator state in the nonmagnetic phase. Furthermore, the surface band pairs exhibit strong termination dependence which provides insight into their origin. Our results suggest GdAuAl$_{{4}}$Ge$_{2}$ as a rare earth platform to explore the interplay between band topology, magnetism and f electron correlation, calling for further study targeting on its magnetic structure, magnetic topology state, transport behavior, and microscopic properties.
中图分类号: (Electronic structure (photoemission, etc.))
- 74.25.Jb