Single crystal growth and electronic structure of Rh-doped Sr3Ir2O7

doi:10.1088/1674-1056/acd7d5

中国物理B ›› 2023, Vol. 32 ›› Issue (8): 87108-087108.doi: 10.1088/1674-1056/acd7d5

Single crystal growth and electronic structure of Rh-doped Sr₃Ir₂O₇

Bingqian Wang(王冰倩), Shuting Peng(彭舒婷), Zhipeng Ou(欧志鹏), Yuchen Wang(王宇晨), Muhammad Waqas, Yang Luo(罗洋), Zhiyuan Wei(魏志远), Linwei Huai(淮琳崴),Jianchang Shen(沈建昌), Yu Miao(缪宇), Xiupeng Sun(孙秀鹏), Yuewei Yin(殷月伟), and Junfeng He(何俊峰)^†

Department of Physics and CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China

收稿日期:2023-04-15 修回日期:2023-05-15 接受日期:2023-05-23 出版日期:2023-07-14 发布日期:2023-07-27
通讯作者: Junfeng He E-mail:jfhe@ustc.edu.cn
基金资助:
The work at University of Science and Technology of China (USTC) was supported by the USTC start-up fund, the National Natural Science Foundation of China (Grant Nos.12074358 and 12004363),the Fundamental Research Funds for the Central Universities (Grant Nos.WK3510000008 and WK2030000035), and the Innovation Program for Quantum Science and Technology (Grant No.2021ZD0302802). Use of the Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No.DE-AC02-76SF00515.

Single crystal growth and electronic structure of Rh-doped Sr₃Ir₂O₇

Department of Physics and CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China

Received:2023-04-15 Revised:2023-05-15 Accepted:2023-05-23 Online:2023-07-14 Published:2023-07-27
Contact: Junfeng He E-mail:jfhe@ustc.edu.cn
Supported by:
The work at University of Science and Technology of China (USTC) was supported by the USTC start-up fund, the National Natural Science Foundation of China (Grant Nos.12074358 and 12004363),the Fundamental Research Funds for the Central Universities (Grant Nos.WK3510000008 and WK2030000035), and the Innovation Program for Quantum Science and Technology (Grant No.2021ZD0302802). Use of the Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory is supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Contract No.DE-AC02-76SF00515.

摘要/Abstract

摘要： Ruddlesden-Popper iridate Sr₃Ir₂O₇ is a spin-orbit coupled Mott insulator. Hole doped Sr₃Ir₂O₇ provides an ideal platform to study the exotic quantum phenomena that occur near the metal-insulator transition (MIT) region. Rh substitution of Ir is an effective method to induce hole doping into Sr₃Ir₂O₇. However, the highest doping level reported in Sr₃(Ir_1-xRh_x)₂O₇ single crystals was only around 3%, which is far from the MIT region. In this paper, we report the successful growth of single crystals of Sr₃(Ir_1-xRh_x)₂O₇ with a doping level of ～ 9%. The samples have been fully characterized, demonstrating the high quality of the single crystals. Transport measurements have been carried out, confirming the tendency of MIT in these samples. The electronic structure has also been examined by angle-resolved photoemission spectroscopy (ARPES) measurements. Our results establish a platform to investigate the heavily hole doped Sr₃Ir₂O₇ compound, which also provide new insights into the MIT with hole doping in this material system.

关键词: hole doped iridate, single crystal growth, metal-insulator transition, angle-resolved photoemission spectroscopy (ARPES)

Abstract: Ruddlesden-Popper iridate Sr₃Ir₂O₇ is a spin-orbit coupled Mott insulator. Hole doped Sr₃Ir₂O₇ provides an ideal platform to study the exotic quantum phenomena that occur near the metal-insulator transition (MIT) region. Rh substitution of Ir is an effective method to induce hole doping into Sr₃Ir₂O₇. However, the highest doping level reported in Sr₃(Ir_1-xRh_x)₂O₇ single crystals was only around 3%, which is far from the MIT region. In this paper, we report the successful growth of single crystals of Sr₃(Ir_1-xRh_x)₂O₇ with a doping level of ～ 9%. The samples have been fully characterized, demonstrating the high quality of the single crystals. Transport measurements have been carried out, confirming the tendency of MIT in these samples. The electronic structure has also been examined by angle-resolved photoemission spectroscopy (ARPES) measurements. Our results establish a platform to investigate the heavily hole doped Sr₃Ir₂O₇ compound, which also provide new insights into the MIT with hole doping in this material system.

Key words: hole doped iridate, single crystal growth, metal-insulator transition, angle-resolved photoemission spectroscopy (ARPES)

中图分类号: (Non-Fermi-liquid ground states, electron phase diagrams and phase transitions in model systems)

71.10.Hf

71.20.-b (Electron density of states and band structure of crystalline solids) 71.30.+h (Metal-insulator transitions and other electronic transitions) 71.27.+a (Strongly correlated electron systems; heavy fermions)

Bingqian Wang(王冰倩), Shuting Peng(彭舒婷), Zhipeng Ou(欧志鹏), Yuchen Wang(王宇晨), Muhammad Waqas, Yang Luo(罗洋), Zhiyuan Wei(魏志远), Linwei Huai(淮琳崴), Jianchang Shen(沈建昌), Yu Miao(缪宇), Xiupeng Sun(孙秀鹏), Yuewei Yin(殷月伟), and Junfeng He(何俊峰). Single crystal growth and electronic structure of Rh-doped Sr₃Ir₂O₇[J]. 中国物理B, 2023, 32(8): 87108-087108.

Bingqian Wang(王冰倩), Shuting Peng(彭舒婷), Zhipeng Ou(欧志鹏), Yuchen Wang(王宇晨), Muhammad Waqas, Yang Luo(罗洋), Zhiyuan Wei(魏志远), Linwei Huai(淮琳崴), Jianchang Shen(沈建昌), Yu Miao(缪宇), Xiupeng Sun(孙秀鹏), Yuewei Yin(殷月伟), and Junfeng He(何俊峰). Single crystal growth and electronic structure of Rh-doped Sr₃Ir₂O₇[J]. Chin. Phys. B, 2023, 32(8): 87108-087108.

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Single crystal growth and electronic structure of Rh-doped Sr₃Ir₂O₇

Single crystal growth and electronic structure of Rh-doped Sr₃Ir₂O₇

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