Negative magnetoresistance in Dirac semimetal Cd3As2 with in-plane magnetic field perpendicular to current

doi:10.1088/1674-1056/accd50

中国物理B ›› 2023, Vol. 32 ›› Issue (7): 77305-077305.doi: 10.1088/1674-1056/accd50

Negative magnetoresistance in Dirac semimetal Cd₃As₂ with in-plane magnetic field perpendicular to current

Hao-Nan Cui(崔浩楠)^1,2,3, Guang-Yu Zhu(祝光宇)^2,3, Jian-Kun Wang(王建坤)^2,3, Jia-Jie Yang(杨佳洁)^2,3, Wen-Zhuang Zheng(郑文壮)¹, Ben-Chuan Lin(林本川)^2,3,4,†, Zhi-Min Liao(廖志敏)^1,‡, Shuo Wang(王硕)^2,3,4,§, and Da-Peng Yu(俞大鹏)^2,3,4

1 State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China;
2 Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
3 International Quantum Academy, Shenzhen 518048, China;
4 Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China

收稿日期:2023-03-14 修回日期:2023-04-09 接受日期:2023-04-16 出版日期:2023-06-15 发布日期:2023-07-05
通讯作者: Ben-Chuan Lin, Zhi-Min Liao, Shuo Wang E-mail:linbc@sustech.edu.cn;liaozm@pku.edu.cn;wangs6@sustech.edu.cn
基金资助:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 12004158, 12074162, and 91964201), the National Key Research and Development Program of China (Grant Nos. 2022YFA1403700 and 2020YFA0309300), the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2018B030327001), Guangdong Provincial Key Laboratory (Grant No. 2019B121203002), and Guangdong Basic and Applied Basic Research Foundation (Grant No. 2022B1515130005).

Negative magnetoresistance in Dirac semimetal Cd₃As₂ with in-plane magnetic field perpendicular to current

1 State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China;
2 Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
3 International Quantum Academy, Shenzhen 518048, China;
4 Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China

Received:2023-03-14 Revised:2023-04-09 Accepted:2023-04-16 Online:2023-06-15 Published:2023-07-05
Contact: Ben-Chuan Lin, Zhi-Min Liao, Shuo Wang E-mail:linbc@sustech.edu.cn;liaozm@pku.edu.cn;wangs6@sustech.edu.cn
Supported by:
This work was supported by the National Natural Science Foundation of China (Grant Nos. 12004158, 12074162, and 91964201), the National Key Research and Development Program of China (Grant Nos. 2022YFA1403700 and 2020YFA0309300), the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2018B030327001), Guangdong Provincial Key Laboratory (Grant No. 2019B121203002), and Guangdong Basic and Applied Basic Research Foundation (Grant No. 2022B1515130005).

摘要/Abstract

摘要： Topological insulators and semimetals have exotic surface and bulk states with massless Dirac or Weyl fermions, demonstrating microscopic transport phenomenon based on relativistic theory. Chiral anomaly induced negative magnetoresistance (negative MR) under parallel magnetic field and current has been used as a probable evidence of Weyl fermions in recent years. Here we report a novel negative MR result with mutually perpendicular in-plane magnetic field and current in Cd₃As₂ nanowires. The negative MR has a considerable value of -16% around 1.5 K and could persist to room temperature of 300 K with value of -1%. The gate tuning and angle dependence of the negative MR demonstrate the mechanism of the observed negative MR is different from the chiral anomaly. Percolating current paths induced by charge puddles and disorder might be involved to produce such considerable negative MR. Our results indicate the negative MR effect in topological semimetals involves synergistic effects of many mechanisms besides chiral anomaly.

关键词: negative magnetoresistance, chiral anomaly, topological semimetals, quantum transport

Abstract: Topological insulators and semimetals have exotic surface and bulk states with massless Dirac or Weyl fermions, demonstrating microscopic transport phenomenon based on relativistic theory. Chiral anomaly induced negative magnetoresistance (negative MR) under parallel magnetic field and current has been used as a probable evidence of Weyl fermions in recent years. Here we report a novel negative MR result with mutually perpendicular in-plane magnetic field and current in Cd₃As₂ nanowires. The negative MR has a considerable value of -16% around 1.5 K and could persist to room temperature of 300 K with value of -1%. The gate tuning and angle dependence of the negative MR demonstrate the mechanism of the observed negative MR is different from the chiral anomaly. Percolating current paths induced by charge puddles and disorder might be involved to produce such considerable negative MR. Our results indicate the negative MR effect in topological semimetals involves synergistic effects of many mechanisms besides chiral anomaly.

Key words: negative magnetoresistance, chiral anomaly, topological semimetals, quantum transport

中图分类号: (Magnetoresistance)

73.43.Qt

73.63.-b (Electronic transport in nanoscale materials and structures) 71.55.Ak (Metals, semimetals, and alloys)

Hao-Nan Cui(崔浩楠), Guang-Yu Zhu(祝光宇), Jian-Kun Wang(王建坤), Jia-Jie Yang(杨佳洁), Wen-Zhuang Zheng(郑文壮), Ben-Chuan Lin(林本川), Zhi-Min Liao(廖志敏), Shuo Wang(王硕), and Da-Peng Yu(俞大鹏). Negative magnetoresistance in Dirac semimetal Cd₃As₂ with in-plane magnetic field perpendicular to current[J]. 中国物理B, 2023, 32(7): 77305-077305.

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Negative magnetoresistance in Dirac semimetal Cd₃As₂ with in-plane magnetic field perpendicular to current

Negative magnetoresistance in Dirac semimetal Cd₃As₂ with in-plane magnetic field perpendicular to current

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