中国物理B ›› 2023, Vol. 32 ›› Issue (3): 37802-037802.doi: 10.1088/1674-1056/aca393

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Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg3Si2Te6

Chaoxin Huang(黄潮欣)1,†, Benyuan Cheng(程本源)2,3,†, Yunwei Zhang(张云蔚)1, Long Jiang(姜隆)4, Lisi Li(李历斯)1, Mengwu Huo(霍梦五)1, Hui Liu(刘晖)1, Xing Huang(黄星)1, Feixiang Liang(梁飞翔)1, Lan Chen(陈岚)1, Hualei Sun(孙华蕾)1, and Meng Wang(王猛)1,‡   

  1. 1 Center for Neutron Science and Technology, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China;
    2 Shanghai Institute of Laser Plasma, Shanghai 201800, China;
    3 Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China;
    4 Instrumentation Analysis and Research Center, Sun Yat-Sen UniVersity, Guangzhou 510275, China
  • 收稿日期:2022-08-31 修回日期:2022-10-28 接受日期:2022-11-17 出版日期:2023-02-14 发布日期:2023-02-14
  • 通讯作者: Chaoxin Huang, Benyuan Cheng, Meng Wang E-mail:wangmeng5@mail.sysu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12174454, 11904414, 11904416, and 12104427), the Guangdong Basic and Applied Basic Research Foundation, China (Grant No. 2021B1515120015), the Guangzhou Basic and Applied Basic Research Foundation (Grant No. 202201011123), and the National Key Research and Development Program of China (Grant No. 2019YFA0705702).

Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg3Si2Te6

Chaoxin Huang(黄潮欣)1,†, Benyuan Cheng(程本源)2,3,†, Yunwei Zhang(张云蔚)1, Long Jiang(姜隆)4, Lisi Li(李历斯)1, Mengwu Huo(霍梦五)1, Hui Liu(刘晖)1, Xing Huang(黄星)1, Feixiang Liang(梁飞翔)1, Lan Chen(陈岚)1, Hualei Sun(孙华蕾)1, and Meng Wang(王猛)1,‡   

  1. 1 Center for Neutron Science and Technology, Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China;
    2 Shanghai Institute of Laser Plasma, Shanghai 201800, China;
    3 Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China;
    4 Instrumentation Analysis and Research Center, Sun Yat-Sen UniVersity, Guangzhou 510275, China
  • Received:2022-08-31 Revised:2022-10-28 Accepted:2022-11-17 Online:2023-02-14 Published:2023-02-14
  • Contact: Chaoxin Huang, Benyuan Cheng, Meng Wang E-mail:wangmeng5@mail.sysu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 12174454, 11904414, 11904416, and 12104427), the Guangdong Basic and Applied Basic Research Foundation, China (Grant No. 2021B1515120015), the Guangzhou Basic and Applied Basic Research Foundation (Grant No. 202201011123), and the National Key Research and Development Program of China (Grant No. 2019YFA0705702).

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摘要： We report the synthesis and characterization of a Si-based ternary semiconductor Mg3Si2Te6, which exhibits a quasi-two-dimensional structure, where the trigonal Mg2Si2Te6 layers are separated by Mg ions. Ultraviolet-visible absorption spectroscopy and density functional theory calculations were performed to investigate the electronic structure. The experimentally determined direct band gap is 1.39 eV, consistent with the value of the density function theory calculations. Our results reveal that Mg3Si2Te6 is a direct gap semiconductor, which is a potential candidate for near-infrared optoelectronic devices.

关键词: semiconductors, semiconductor compounds, narrow-band systems, methods of crystal growth

Abstract: We report the synthesis and characterization of a Si-based ternary semiconductor Mg3Si2Te6, which exhibits a quasi-two-dimensional structure, where the trigonal Mg2Si2Te6 layers are separated by Mg ions. Ultraviolet-visible absorption spectroscopy and density functional theory calculations were performed to investigate the electronic structure. The experimentally determined direct band gap is 1.39 eV, consistent with the value of the density function theory calculations. Our results reveal that Mg3Si2Te6 is a direct gap semiconductor, which is a potential candidate for near-infrared optoelectronic devices.

Key words: semiconductors, semiconductor compounds, narrow-band systems, methods of crystal growth

中图分类号:  (Semiconductors)

  • 78.40.Fy
71.20.Nr (Semiconductor compounds) 71.28.+d (Narrow-band systems; intermediate-valence solids) 81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)