中国物理B ›› 2022, Vol. 31 ›› Issue (1): 18801-018801.doi: 10.1088/1674-1056/ac0bb0

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High efficiency ETM-free perovskite cell composed of CuSCN and increasing gradient CH3NH3PbI3

Tao Wang(汪涛)1,3,4,†, Gui-Jiang Xiao(肖贵将)1, Ren Sun(孙韧)2, Lin-Bao Luo(罗林保)1, and Mao-Xiang Yi(易茂祥)1   

  1. 1 School of Microelectronics, Hefei University of Technology, Hefei 230601, China;
    2 School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
    3 School of Information Science and Technology, University of Science and Technology of China, Hefei 230027, China;
    4 National Engineering Laboratory of Special Display Technology, Hefei 230009, China
  • 收稿日期:2021-03-22 修回日期:2021-05-10 接受日期:2021-06-16 出版日期:2021-12-03 发布日期:2021-12-23
  • 通讯作者: Tao Wang E-mail:taowang@hfut.edu.cn
  • 基金资助:
    Project supported by the Fundamental Research Funds for the Central Universities of China (Grant No. JD2020JGPY0010) and the China Post-Doctoral Science Foundation (Grant No. 2020M671834).

High efficiency ETM-free perovskite cell composed of CuSCN and increasing gradient CH3NH3PbI3

Tao Wang(汪涛)1,3,4,†, Gui-Jiang Xiao(肖贵将)1, Ren Sun(孙韧)2, Lin-Bao Luo(罗林保)1, and Mao-Xiang Yi(易茂祥)1   

  1. 1 School of Microelectronics, Hefei University of Technology, Hefei 230601, China;
    2 School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
    3 School of Information Science and Technology, University of Science and Technology of China, Hefei 230027, China;
    4 National Engineering Laboratory of Special Display Technology, Hefei 230009, China
  • Received:2021-03-22 Revised:2021-05-10 Accepted:2021-06-16 Online:2021-12-03 Published:2021-12-23
  • Contact: Tao Wang E-mail:taowang@hfut.edu.cn
  • Supported by:
    Project supported by the Fundamental Research Funds for the Central Universities of China (Grant No. JD2020JGPY0010) and the China Post-Doctoral Science Foundation (Grant No. 2020M671834).

摘要: To enhance device performance and reduce fabrication cost, a series of electron transporting material (ETM)-free perovskite solar cells (PSCs) is developed by TCAD Atlas. The accuracy of the physical mode of PSCs is verified, due to the simulations of PEDOT:PSS-CH3NH3PbI3-PCBM and CuSCN-CH3NH3PbI3-PCBM p-i-n PSCs showing a good agreement with experimental results. Different hole transporting materials (HTMs) are selected and directly combined with n-CH3NH3PbI3, and the CuSCN-CH3NH3PbI3 is the best in these ETM-free PSCs. To further study the CuSCN-CH3NH3PbI3 PSC, the influences of back electrode material, gradient band gap, thickness, doping concentration, and bulk defect density on the performance are investigated. Energy band and distribution of electric field are utilized to optimize the design. As a result, the efficiency of CuSCN-CH3NH3PbI3 PSC is achieved to be 26.64%. This study provides the guideline for designing and improving the performances of ETM-free PSCs.

关键词: electron transporting material (ETM)-free perovskite solar cell, inorganic hole transporting material (HTM), back electrode, gradient band gap

Abstract: To enhance device performance and reduce fabrication cost, a series of electron transporting material (ETM)-free perovskite solar cells (PSCs) is developed by TCAD Atlas. The accuracy of the physical mode of PSCs is verified, due to the simulations of PEDOT:PSS-CH3NH3PbI3-PCBM and CuSCN-CH3NH3PbI3-PCBM p-i-n PSCs showing a good agreement with experimental results. Different hole transporting materials (HTMs) are selected and directly combined with n-CH3NH3PbI3, and the CuSCN-CH3NH3PbI3 is the best in these ETM-free PSCs. To further study the CuSCN-CH3NH3PbI3 PSC, the influences of back electrode material, gradient band gap, thickness, doping concentration, and bulk defect density on the performance are investigated. Energy band and distribution of electric field are utilized to optimize the design. As a result, the efficiency of CuSCN-CH3NH3PbI3 PSC is achieved to be 26.64%. This study provides the guideline for designing and improving the performances of ETM-free PSCs.

Key words: electron transporting material (ETM)-free perovskite solar cell, inorganic hole transporting material (HTM), back electrode, gradient band gap

中图分类号:  (Efficiency and performance of solar cells)

  • 88.40.hj
88.40.fc (Modeling and analysis) 88.40.H- (Solar cells (photovoltaics))