中国物理B ›› 2022, Vol. 31 ›› Issue (11): 118801-118801.doi: 10.1088/1674-1056/ac67c5
所属专题: SPECIAL TOPIC — Emerging photovoltaic materials and devices
Zheng Fang(方正)1,2,†, Liu Yang(杨柳)2,†, Yongbin Jin(靳永斌)2,†, Kaikai Liu(刘凯凯)2, Huiping Feng(酆辉平)2, Bingru Deng(邓冰如)2, Lingfang Zheng(郑玲芳)2, Changcai Cui(崔长彩)1, Chengbo Tian(田成波)2, Liqiang Xie(谢立强)2,‡, Xipeng Xu(徐西鹏)1,§, and Zhanhua Wei(魏展画)2,¶
Zheng Fang(方正)1,2,†, Liu Yang(杨柳)2,†, Yongbin Jin(靳永斌)2,†, Kaikai Liu(刘凯凯)2, Huiping Feng(酆辉平)2, Bingru Deng(邓冰如)2, Lingfang Zheng(郑玲芳)2, Changcai Cui(崔长彩)1, Chengbo Tian(田成波)2, Liqiang Xie(谢立强)2,‡, Xipeng Xu(徐西鹏)1,§, and Zhanhua Wei(魏展画)2,¶
摘要: SnO2 is widely used as the electron transport layer (ETL) in perovskite solar cells (PSCs) due to its excellent electron mobility, low processing temperature, and low cost. And the most common way of preparing the SnO2 ETL is spin-coating using the corresponding colloid solution. However, the spin-coated SnO2 layer is sometimes not so compact and contains pinholes, weakening the hole blocking capability. Here, a SnO2 thin film prepared through magnetron-sputtering was inserted between ITO and the spin-coated SnO2 acted as an interlayer. This strategy can combine the advantages of efficient electron extraction and hole blocking due to the high compactness of the sputtered film and the excellent electronic property of the spin-coated SnO2. Therefore, the recombination of photo-generated carriers at the interface is significantly reduced. As a result, the semitransparent perovskite solar cells (with a bandgap of 1.73 eV) based on this double-layered SnO2 demonstrate a maximum efficiency of 17.7% (stabilized at 17.04%) with negligible hysteresis. Moreover, the shelf stability of the device is also significantly improved, maintaining 95% of the initial efficiency after 800-hours of aging.
中图分类号: (Solar cells (photovoltaics))