Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal

doi:10.1088/1674-1056/19/11/114210

中国物理B ›› 2010, Vol. 19 ›› Issue (11): 114210-114301.doi: 10.1088/1674-1056/19/11/114210

Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal

Gopal Achanta Venu¹, 刘正奇², 冯天华², 戴峭峰², 吴立军², 兰胜², 丁才蓉³, 汪河洲³

(1)Department of Condensed Matter Physics and Material Science, Tata Institute of Fundamental Research, Homi Bhabha Road,Mumbai 400005, India; (2)Laboratory of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China; (3)State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan (Sun Yat-Se14) University, Guangzhou 510275, China

收稿日期:2010-01-25 修回日期:2010-04-13 出版日期:2010-11-15 发布日期:2010-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10974060 and 10774050) and the Program for Innovative Research Team of the Higher Education in Guangdong, China (Grant No. 06CXTD005).

Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal

Liu Zheng-Qi(刘正奇)^a), Feng Tian-Hua(冯天华)^a), Dai Qiao-Feng(戴峭峰)^a), Wu Li-Jun(吴立军)^a), Lan Sheng(兰胜)^a)†, Ding Cai-Rong(丁才蓉)^b), Wang He-Zhou(汪河洲)^b), and Gopal Achanta Venu^c)

^a Laboratory of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China; ^b State Key Laboratory of Optoelectronic Materials and Technologies, Zhongshan (Sun Yat-Se14) University, Guangzhou 510275, China; ^c Department of Condensed Matter Physics and Material Science, Tata Institute of Fundamental Research, Homi Bhabha Road,Mumbai 400005, India

Received:2010-01-25 Revised:2010-04-13 Online:2010-11-15 Published:2010-11-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10974060 and 10774050) and the Program for Innovative Research Team of the Higher Education in Guangdong, China (Grant No. 06CXTD005).

摘要/Abstract

摘要： This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal. In experiments, semiconductor core-shell quantum dots are intentionally confined in a thin polymer film on which a three-dimensional colloidal photonic crystal is fabricated. The spontaneous emission rate of quantum dots is characterised by conventional and time-resolved photoluminescence (PL) measurements. The modification of the spontaneous emission rate, which is reflected in the change of spectral shape and PL lifetime, is clearly observed. While an obvious increase in the PL lifetime is found at most wavelengths in the band gap, a significant reduction in the PL lifetime by one order of magnitude is observed at the short-wavelength band edge. Numerical simulation reveals a periodic modulation of spontaneous emission rate with decreasing modulation strength when an emitter is moved away from the surface of the photonic crystal. It is supported by the fact that the modification of spontaneous emission rate is not pronounced for quantum dots distributed in a thick polymer film where both enhancement and suppression are present simultaneously. This finding provides a simple and effective way for improving the performance of light emitting devices.

Abstract: This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal. In experiments, semiconductor core-shell quantum dots are intentionally confined in a thin polymer film on which a three-dimensional colloidal photonic crystal is fabricated. The spontaneous emission rate of quantum dots is characterised by conventional and time-resolved photoluminescence (PL) measurements. The modification of the spontaneous emission rate, which is reflected in the change of spectral shape and PL lifetime, is clearly observed. While an obvious increase in the PL lifetime is found at most wavelengths in the band gap, a significant reduction in the PL lifetime by one order of magnitude is observed at the short-wavelength band edge. Numerical simulation reveals a periodic modulation of spontaneous emission rate with decreasing modulation strength when an emitter is moved away from the surface of the photonic crystal. It is supported by the fact that the modification of spontaneous emission rate is not pronounced for quantum dots distributed in a thick polymer film where both enhancement and suppression are present simultaneously. This finding provides a simple and effective way for improving the performance of light emitting devices.

Key words: spontaneous emission, colloidal photonic crystal, semiconductor quantum dot, time-resolved photoluminescence

中图分类号: (Photonic bandgap materials)

42.70.Qs

78.55.Kz (Solid organic materials) 78.67.Hc (Quantum dots) 82.70.Dd (Colloids)

刘正奇, 冯天华, 戴峭峰, 吴立军, 兰胜, 丁才蓉, 汪河洲, Gopal Achanta Venu. Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal[J]. 中国物理B, 2010, 19(11): 114210-114301.

Liu Zheng-Qi(刘正奇), Feng Tian-Hua(冯天华), Dai Qiao-Feng(戴峭峰), Wu Li-Jun(吴立军), Lan Sheng(兰胜), Ding Cai-Rong(丁才蓉), Wang He-Zhou(汪河洲), and Gopal Achanta Venu. Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal[J]. Chin. Phys. B, 2010, 19(11): 114210-114301.

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Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal

Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal

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