Flexible and degradable resistive switching memory fabricated with sodium alginate

doi:10.1088/1674-1056/abc67a

中国物理B ›› 2021, Vol. 30 ›› Issue (4): 47302-.doi: 10.1088/1674-1056/abc67a

收稿日期:2020-10-09 修回日期:2020-10-27 接受日期:2020-10-31 出版日期:2021-03-16 发布日期:2021-03-24

Flexible and degradable resistive switching memory fabricated with sodium alginate

Zhuang-Zhuang Li(李壮壮)¹, Zi-Yang Yan(严梓洋)¹, Jia-Qi Xu(许嘉琪)¹, Xiao-Han Zhang(张晓晗)¹, Jing-Bo Fan(凡井波)¹, Ya Lin(林亚)^1,†, and Zhong-Qiang Wang(王中强)^1,2,‡

1 Department of Physics, Northeast Normal University, Changchun 130024, China; 2 National Demonstration Center for Experimental Physics Education, Northeast Normal University, Changchun 130024, China

Received:2020-10-09 Revised:2020-10-27 Accepted:2020-10-31 Online:2021-03-16 Published:2021-03-24
Contact: ^†Corresponding author. E-mail: liny474@nenu.edu.cn ^‡Corresponding author. E-mail: wangzq752@nenu.edu.cn
Supported by:
Project supported by the Fund from the Ministry of Science and Technology of China (Grant No. 2018YFE0118300), the National Natural Science Foundation of China (Grant Nos. 11974072, 51902048, 61774031, and 61574031), the "111" Project, China (Grant No. B13013), the China Postdoctoral Science Foundation, China (Grant No. 2019M661185), the Fundamental Research Funds for the Central Universities, China (Grant No. 2412019QD015), and Science Fund from the Jilin Province, China (Grant No. JJKH20201163KJ).

摘要/Abstract

Abstract: Transient electronics has attracted interest as an emerging technology to solve electronic-waste problem, due to its physically vanishing ability in solution. Here in this work, we demonstrate a flexible and degradable transient resistive switching (RS) memory device with simple structure of Cu/sodium alginate (SA)/ITO. The device presents excellent RS characteristics as well as high flexibility, including low operating voltage (<1.5 V) and multilevel RS behavior. No performance degradation occurs after bending the device 50 times. Moreover, our device can be absolutely dissolved in deionized water. The proposed SA-based transient memory device has great potential for the development of green and security memory devices.

Key words: resistive switching memory, sodium alginate, multilevel resistive switching, transient electronics

中图分类号: (Metal-semiconductor-metal structures)

73.40.Sx

77.22.Jp (Dielectric breakdown and space-charge effects) 81.07.-b (Nanoscale materials and structures: fabrication and characterization)

. [J]. 中国物理B, 2021, 30(4): 47302-.

Zhuang-Zhuang Li(李壮壮), Zi-Yang Yan(严梓洋), Jia-Qi Xu(许嘉琪), Xiao-Han Zhang(张晓晗), Jing-Bo Fan(凡井波), Ya Lin(林亚), and Zhong-Qiang Wang(王中强). Flexible and degradable resistive switching memory fabricated with sodium alginate[J]. Chin. Phys. B, 2021, 30(4): 47302-.

[1]	Qun-Si Yang(羊群思), Qing Liu(刘清), Dong Zhou(周东), Wei-Zong Xu(徐尉宗), Yi-Wang Wang(王宜望), Fang-Fang Ren(任芳芳), and Hai Lu(陆海). Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template[J]. 中国物理B, 2021, 30(11): 117303-117303.
[2]	李金岚, 李赟, 汪玲, 徐跃, 闫锋, 韩平, 纪小丽. Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode[J]. 中国物理B, 2019, 28(2): 27303-027303.
[3]	谷现荣, 郭立丹, 孙向南. Recent spinterfacial studies targeted to spin manipulation in molecular spintronic devices[J]. 中国物理B, 2018, 27(10): 107202-107202.
[4]	叶鑫, 夏晓川, 梁红伟, 李卓, 张贺秋, 杜国同, 崔兴柱, 梁晓华. Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection[J]. 中国物理B, 2018, 27(8): 87304-087304.
[5]	崔书娟, 梅增霞, 侯尧楠, 陈全胜, 梁会力, 张永晖, 霍文星, 杜小龙. Enhanced photoresponse performance in Ga/Ga₂O₃ nanocomposite solar-blind ultraviolet photodetectors[J]. 中国物理B, 2018, 27(6): 67301-067301.
[6]	刘浩男, 索晓霞, 张林奥, 张端, 吴汉春, 赵宏康, 江兆潭, 李英兰, 王志. Characteristic modification by inserted metal layer and interface graphene layer in ZnO-based resistive switching structures[J]. 中国物理B, 2018, 27(2): 27104-027104.
[7]	马寒露, 王中强, 徐海阳, 张磊, 赵晓宁, 韩曼舒, 马剑钢, 刘益春. Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments[J]. 中国物理B, 2016, 25(12): 127303-127303.
[8]	宋庆文, 汤晓燕, 袁昊, 王悦湖, 张艺蒙, 郭辉, 贾仁需, 吕红亮, 张义门, 张玉明. Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs[J]. 中国物理B, 2016, 25(4): 47102-047102.
[9]	王拴虎, 张勖, 邹吕宽, 赵靓, 王文鑫, 孙继荣. Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction[J]. 中国物理B, 2015, 24(10): 107307-107307.
[10]	王昊, 陈星, 许光辉, 黄卡玛. A novel physical parameter extraction approach for Schottky diodes[J]. 中国物理B, 2015, 24(7): 77305-077305.
[11]	魏江镔, 池晓伟, 陆超, 王尘, 林光杨, 吴焕达, 黄巍, 李成, 陈松岩, 刘春莉. Modulation of WN_x/Ge Schottky barrier height by varying N composition of tungsten nitride[J]. 中国物理B, 2015, 24(7): 77306-077306.
[12]	衡航, 杨理. Near field enhancement and absorption properties of the double cylindrical microcavities based on triple-band metamaterial absorber[J]. 中国物理B, 2014, 23(6): 68101-068101.
[13]	乔士柱, 康仕寿, 秦羽丰, 李强, 钟海, 康韵, 于淑云, 韩广兵, 颜世申, 梅良模. Multi-polar resistance switching and memory effect in copper phthalocyanine junctions[J]. 中国物理B, 2014, 23(5): 58501-058501.
[14]	袁昊, 汤晓燕, 张义门, 张玉明, 宋庆文, 杨霏, 吴昊. 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination[J]. 中国物理B, 2014, 23(5): 57102-057102.
[15]	郑柳, 张峰, 刘胜北, 董林, 刘兴昉, 樊中朝, 刘斌, 闫果果, 王雷, 赵万顺, 孙国胜, 何志, 杨富华. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions[J]. 中国物理B, 2013, 22(9): 97302-097302.

Flexible and degradable resistive switching memory fabricated with sodium alginate

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0