中国物理B ›› 2021, Vol. 30 ›› Issue (4): 47302-.doi: 10.1088/1674-1056/abc67a

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  • 收稿日期:2020-10-09 修回日期:2020-10-27 接受日期:2020-10-31 出版日期:2021-03-16 发布日期:2021-03-24

Flexible and degradable resistive switching memory fabricated with sodium alginate

Zhuang-Zhuang Li(李壮壮)1, Zi-Yang Yan(严梓洋)1, Jia-Qi Xu(许嘉琪)1, Xiao-Han Zhang(张晓晗)1, Jing-Bo Fan(凡井波)1, Ya Lin(林亚)1,†, and Zhong-Qiang Wang(王中强)1,2,‡   

  1. 1 Department of Physics, Northeast Normal University, Changchun 130024, China; 2 National Demonstration Center for Experimental Physics Education, Northeast Normal University, Changchun 130024, China
  • Received:2020-10-09 Revised:2020-10-27 Accepted:2020-10-31 Online:2021-03-16 Published:2021-03-24
  • Contact: †Corresponding author. E-mail: liny474@nenu.edu.cn ‡Corresponding author. E-mail: wangzq752@nenu.edu.cn
  • Supported by:
    Project supported by the Fund from the Ministry of Science and Technology of China (Grant No. 2018YFE0118300), the National Natural Science Foundation of China (Grant Nos. 11974072, 51902048, 61774031, and 61574031), the "111" Project, China (Grant No. B13013), the China Postdoctoral Science Foundation, China (Grant No. 2019M661185), the Fundamental Research Funds for the Central Universities, China (Grant No. 2412019QD015), and Science Fund from the Jilin Province, China (Grant No. JJKH20201163KJ).

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Abstract: Transient electronics has attracted interest as an emerging technology to solve electronic-waste problem, due to its physically vanishing ability in solution. Here in this work, we demonstrate a flexible and degradable transient resistive switching (RS) memory device with simple structure of Cu/sodium alginate (SA)/ITO. The device presents excellent RS characteristics as well as high flexibility, including low operating voltage (<1.5 V) and multilevel RS behavior. No performance degradation occurs after bending the device 50 times. Moreover, our device can be absolutely dissolved in deionized water. The proposed SA-based transient memory device has great potential for the development of green and security memory devices.

Key words: resistive switching memory, sodium alginate, multilevel resistive switching, transient electronics

中图分类号:  (Metal-semiconductor-metal structures)

  • 73.40.Sx
77.22.Jp (Dielectric breakdown and space-charge effects) 81.07.-b (Nanoscale materials and structures: fabrication and characterization)