中国物理B ›› 2021, Vol. 30 ›› Issue (2): 27304-0.doi: 10.1088/1674-1056/abcf97

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  • 收稿日期:2020-11-04 修回日期:2020-11-25 接受日期:2020-12-02 出版日期:2021-01-18 发布日期:2021-01-18

Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing

Shu-Xing Zhou(周书星)1,†, Li-Kun Ai(艾立鹍)2, Ming Qi(齐鸣)2, An-Huai Xu(徐安怀)2, Jia-Sheng Yan(颜家圣)3, Shu-Sen Li(李树森)3, and Zhi Jin(金智)4   

  1. 1 Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang 441053, China; 2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; 3 Hubei Key Laboratory of High Power Semiconductor Technology, Xiangyang 441021, China; 4 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2020-11-04 Revised:2020-11-25 Accepted:2020-12-02 Online:2021-01-18 Published:2021-01-18
  • Contact: †Corresponding author. E-mail: sxzhou@mail.ustc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11705277 and 61434006) and the Project of Hubei University of Arts and Science (Grant No. XK2019053).

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Abstract: Carbon-doped InGaAsBi films on InP:Fe (100) substrates have been grown by gas source molecular beam epitaxy (GSMBE). The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped InGaAsBi films were characterized by Van der Pauw-Hall measurement and transmission line method (TLM) with and without rapid thermal annealing (RTA). It was found that the specific contact resistance decreases gradually with the increase of carrier concentration. The electron concentration exhibits a sharp increase, and the specific contact resistance shows a noticeable reduction after RTA. With RTA, the InGaAsBi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6× 1021 cm-3 and achieved an ultra-low specific contact resistance of 1× 10-8 Ω cm2, revealing that contact resistance depends greatly on the tunneling effect.

Key words: InGaAsBi, electrical properties, contact resistance, rapid thermal annealing

中图分类号:  (Semiconductor-electrolyte contacts)

  • 73.40.Mr
68.35.bg (Semiconductors) 68.35.Ct (Interface structure and roughness) 85.30.De (Semiconductor-device characterization, design, and modeling)