中国物理B ›› 2019, Vol. 28 ›› Issue (7): 78103-078103.doi: 10.1088/1674-1056/28/7/078103

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation

Hui Guo(郭辉), Xueyan Wang(王雪艳), De-Liang Bao(包德亮), Hong-Liang Lu(路红亮), Yu-Yang Zhang(张余洋), Geng Li(李更), Ye-Liang Wang(王业亮), Shi-Xuan Du(杜世萱), Hong-Jun Gao(高鸿钧)   

  1. 1 Institute of Physics and University of Chinese Academy of Sciences, Beijing 100190, China;
    2 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2019-04-28 出版日期:2019-07-05 发布日期:2019-07-05
  • 通讯作者: Shi-Xuan Du E-mail:sxdu@iphy.ac.cn
  • 基金资助:

    Project supported by the National Key Research & Development Program of China (Grant Nos. 2016YFA0202300 and 2018YFA0305800), the National Natural Science Foundation of China (Grant Nos. 61390501, 61888102, and 51872284), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), Beijing Nova Program, China (Grant No. Z181100006218023), and the University of Chinese Academy of Sciences.

Fabrication of large-scale graphene/2D-germanium heterostructure by intercalation

Hui Guo(郭辉)1, Xueyan Wang(王雪艳)1, De-Liang Bao(包德亮)1, Hong-Liang Lu(路红亮)1, Yu-Yang Zhang(张余洋)1,2, Geng Li(李更)1,2, Ye-Liang Wang(王业亮)1, Shi-Xuan Du(杜世萱)1,2, Hong-Jun Gao(高鸿钧)1,2   

  1. 1 Institute of Physics and University of Chinese Academy of Sciences, Beijing 100190, China;
    2 CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
  • Received:2019-04-28 Online:2019-07-05 Published:2019-07-05
  • Contact: Shi-Xuan Du E-mail:sxdu@iphy.ac.cn
  • Supported by:

    Project supported by the National Key Research & Development Program of China (Grant Nos. 2016YFA0202300 and 2018YFA0305800), the National Natural Science Foundation of China (Grant Nos. 61390501, 61888102, and 51872284), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), Beijing Nova Program, China (Grant No. Z181100006218023), and the University of Chinese Academy of Sciences.

摘要:

We report a large-scale, high-quality heterostructure composed of vertically-stacked graphene and two-dimensional (2D) germanium. The heterostructure is constructed by the intercalation-assisted technique. We first synthesize large-scale, single-crystalline graphene on Ir(111) surface and then intercalate germanium at the interface of graphene and Ir(111). The intercalated germanium forms a well-defined 2D layer with a 2×2 superstructure with respect to Ir(111). Theoretical calculations demonstrate that the 2D germanium has a double-layer structure. Raman characterizations show that the 2D germanium effectively weakens the interaction between graphene and Ir substrate, making graphene more like the intrinsic one. Further experiments of low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy (XPS) confirm the formation of large-scale and high-quality graphene/2D-germanium vertical heterostructure. The integration of graphene with a traditional 2D semiconductor provides a platform to explore new physical phenomena in the future.

关键词: graphene, two-dimensional germanium, heterostructure, intercalation

Abstract:

We report a large-scale, high-quality heterostructure composed of vertically-stacked graphene and two-dimensional (2D) germanium. The heterostructure is constructed by the intercalation-assisted technique. We first synthesize large-scale, single-crystalline graphene on Ir(111) surface and then intercalate germanium at the interface of graphene and Ir(111). The intercalated germanium forms a well-defined 2D layer with a 2×2 superstructure with respect to Ir(111). Theoretical calculations demonstrate that the 2D germanium has a double-layer structure. Raman characterizations show that the 2D germanium effectively weakens the interaction between graphene and Ir substrate, making graphene more like the intrinsic one. Further experiments of low-energy electron diffraction, scanning tunneling microscopy, and x-ray photoelectron spectroscopy (XPS) confirm the formation of large-scale and high-quality graphene/2D-germanium vertical heterostructure. The integration of graphene with a traditional 2D semiconductor provides a platform to explore new physical phenomena in the future.

Key words: graphene, two-dimensional germanium, heterostructure, intercalation

中图分类号:  (Graphene)

  • 81.05.ue
79.60.Jv (Interfaces; heterostructures; nanostructures) 61.05.jh (Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)) 68.37.Ef (Scanning tunneling microscopy (including chemistry induced with STM))