Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

doi:10.1088/1674-1056/28/4/048503

中国物理B ›› 2019, Vol. 28 ›› Issue (4): 48503-048503.doi: 10.1088/1674-1056/28/4/048503

所属专题： TOPICAL REVIEW — Photodetector: Materials, physics, and applications

• TOPICAL REVIEW—Photodetector: materials, physics, and applications • 上一篇下一篇

Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Changqi Zhou(周长祺), Qiu Ai(艾秋), Xing Chen(陈星), Xiaohong Gao(高晓红), Kewei Liu(刘可为), Dezhen Shen(申德振)

1 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2019-01-01 修回日期:2019-02-24 出版日期:2019-04-05 发布日期:2019-04-05
通讯作者: Xing Chen, Kewei Liu E-mail:chenxing@ciomp.ac.cn;liukw@ciomp.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61475153 and 61605200), the Jilin Province Young and Middle-aged Science and Technology Innovation Leaders and Team Project, China (Grant No. 20180519023JH), the 100 Talents Program of the Chinese Academy of Sciences, and the Science Fund for Excellent Young Scholars of Jilin Province, China (Grant No. 20180520173JH).

Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Changqi Zhou(周长祺)^1,2, Qiu Ai(艾秋)^1,2, Xing Chen(陈星)¹, Xiaohong Gao(高晓红)^1,2, Kewei Liu(刘可为)¹, Dezhen Shen(申德振)¹

1 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2019-01-01 Revised:2019-02-24 Online:2019-04-05 Published:2019-04-05
Contact: Xing Chen, Kewei Liu E-mail:chenxing@ciomp.ac.cn;liukw@ciomp.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61475153 and 61605200), the Jilin Province Young and Middle-aged Science and Technology Innovation Leaders and Team Project, China (Grant No. 20180519023JH), the 100 Talents Program of the Chinese Academy of Sciences, and the Science Fund for Excellent Young Scholars of Jilin Province, China (Grant No. 20180520173JH).

摘要/Abstract

摘要：

Ultraviolet (UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking, flame detecting, pollution monitoring, ozone layer monitoring, and so on. Owing to the special characteristics of large bandgap, solution processable, low cost, environmentally friendly, etc., wide bandgap oxide semiconductor materials, such as ZnO, ZnMgO, Ga₂O₃, TiO₂, and NiO, have gradually become a series of star materials in the field of semiconductor UV detection. In this paper, a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films.

关键词: photodetector, ultraviolet, oxide semiconductor film

Abstract:

Key words: photodetector, ultraviolet, oxide semiconductor film

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 61.82.Fk (Semiconductors)

周长祺, 艾秋, 陈星, 高晓红, 刘可为, 申德振. Ultraviolet photodetectors based on wide bandgap oxide semiconductor films[J]. 中国物理B, 2019, 28(4): 48503-048503.

Changqi Zhou(周长祺), Qiu Ai(艾秋), Xing Chen(陈星), Xiaohong Gao(高晓红), Kewei Liu(刘可为), Dezhen Shen(申德振). Ultraviolet photodetectors based on wide bandgap oxide semiconductor films[J]. Chin. Phys. B, 2019, 28(4): 48503-048503.

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Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

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