Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

doi:10.1088/1674-1056/27/9/097310

中国物理B ›› 2018, Vol. 27 ›› Issue (9): 97310-097310.doi: 10.1088/1674-1056/27/9/097310

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

Xiao-Song Zhao(赵晓松), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Ya-Mei Dou(窦亚梅), Fu-Hua Yang(杨富华)

1 Engineering Research Center for Semiconductor Integrated Technology, Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100083, China;
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2018-05-18 修回日期:2018-07-06 出版日期:2018-09-05 发布日期:2018-09-05
通讯作者: Wei-Hua Han, Fu-Hua Yang E-mail:weihua@semi.ac.cn;fhyang@semi.ac.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant No. 61327813).

Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

Xiao-Song Zhao(赵晓松)^1,2, Wei-Hua Han(韩伟华)^1,2, Yang-Yan Guo(郭仰岩)^1,2, Ya-Mei Dou(窦亚梅)^1,2, Fu-Hua Yang(杨富华)^1,2,3

1 Engineering Research Center for Semiconductor Integrated Technology, Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100083, China;
3 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2018-05-18 Revised:2018-07-06 Online:2018-09-05 Published:2018-09-05
Contact: Wei-Hua Han, Fu-Hua Yang E-mail:weihua@semi.ac.cn;fhyang@semi.ac.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503) and the National Natural Science Foundation of China (Grant No. 61327813).

摘要/Abstract

摘要：

We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from 6 K to 250 K. Several current steps are observed at the initial stage of the transfer curves below 75 K, which result from the electron transport from Hubbard bands to one-dimensional conduction band. The current-off voltages in the transfer curves have a strikingly positive shift below 20 K and a negative shift above 20 K due to the electrostatic screening induced by the ionized dopant atoms. There exists the minimum electron mobility at a critical temperature of 20 K, resulting from the interplay between thermal activation and impurity scattering. Furthermore, electron transport behaviors change from hopping conductance to thermal activation conductance at the temperature of 30 K.

关键词: ionized dopant atom, junctionless nanowire transistor, hopping, thermal activation, current-off voltage

Abstract:

Key words: ionized dopant atom, junctionless nanowire transistor, hopping, thermal activation, current-off voltage

中图分类号: (Electronic transport in nanoscale materials and structures)

73.63.-b

81.07.Gf (Nanowires) 85.30.Tv (Field effect devices)

赵晓松, 韩伟华, 郭仰岩, 窦亚梅, 杨富华. Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors[J]. 中国物理B, 2018, 27(9): 97310-097310.

Xiao-Song Zhao(赵晓松), Wei-Hua Han(韩伟华), Yang-Yan Guo(郭仰岩), Ya-Mei Dou(窦亚梅), Fu-Hua Yang(杨富华). Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors[J]. Chin. Phys. B, 2018, 27(9): 97310-097310.

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Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

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