中国物理B ›› 2018, Vol. 27 ›› Issue (9): 94219-094219.doi: 10.1088/1674-1056/27/9/094219

所属专题: SPECIAL TOPIC — Nanophotonics

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Femtosecond Tm-Ho co-doped fiber laser using a bulk-structured Bi2Se3 topological insulator

Jinho Lee(李珍昊), Ju Han Lee(李周翰)   

  1. School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Republic of Korea
  • 收稿日期:2018-05-24 修回日期:2018-07-30 出版日期:2018-09-05 发布日期:2018-09-05
  • 通讯作者: Ju Han Lee E-mail:j.h.lee@ieee.org
  • 基金资助:

    Project supported by the National Research Foundation of Korea (NRF) Grant Funded by the Korea Government (MSIT), Republic of Korea (Grant No. NRF-2018R1A2B6001641), Ministry of Science and ICT (MSIT) under the Information Technology Research Center (ITRC) Support Program (Grant No. ⅡTP-2018-2015-0-00385), and supervised by the Institute for Information and Communications Technology Promotion (ⅡTP).

Femtosecond Tm-Ho co-doped fiber laser using a bulk-structured Bi2Se3 topological insulator

Jinho Lee(李珍昊), Ju Han Lee(李周翰)   

  1. School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Republic of Korea
  • Received:2018-05-24 Revised:2018-07-30 Online:2018-09-05 Published:2018-09-05
  • Contact: Ju Han Lee E-mail:j.h.lee@ieee.org
  • Supported by:

    Project supported by the National Research Foundation of Korea (NRF) Grant Funded by the Korea Government (MSIT), Republic of Korea (Grant No. NRF-2018R1A2B6001641), Ministry of Science and ICT (MSIT) under the Information Technology Research Center (ITRC) Support Program (Grant No. ⅡTP-2018-2015-0-00385), and supervised by the Institute for Information and Communications Technology Promotion (ⅡTP).

摘要:

We experimentally demonstrate a femtosecond mode-locked thulium-holmium (Tm-Ho) co-doped fiber laser incorporating a saturable absorber (SA) based on a bulk-structured bismuth selenide (Bi2Se3) topological insulator (TI). The SA was prepared by depositing a mechanically exfoliated Bi2Se3 TI layer onto a side-polished optical fiber platform. Unlike high-quality nano-structured Bi2Se3 TI-based SA, bulk-structured Bi2Se3 with non-negligible oxidation was used as a saturable absorption material for this experimental demonstration due to its easy fabrication process. The saturation power and modulation depth of the prepared SA were measured to be ~28.6 W and ~13.4%, respectively. By incorporating the prepared SA into a Tm-Ho co-doped fiber ring cavity, stable soliton pulses with a temporal width of ~853 fs could be generated at 1912.12 nm. The 3-dB bandwidth of the mode-locked pulse was measured to be ~4.87 nm. This experimental demonstration reaffirms that Bi2Se3 is a superb base material for mid-infrared passive mode-locking even under oxidation.

关键词: topological insulator, mode-locked lasers, femtosecond pulse, fiber lasers

Abstract:

We experimentally demonstrate a femtosecond mode-locked thulium-holmium (Tm-Ho) co-doped fiber laser incorporating a saturable absorber (SA) based on a bulk-structured bismuth selenide (Bi2Se3) topological insulator (TI). The SA was prepared by depositing a mechanically exfoliated Bi2Se3 TI layer onto a side-polished optical fiber platform. Unlike high-quality nano-structured Bi2Se3 TI-based SA, bulk-structured Bi2Se3 with non-negligible oxidation was used as a saturable absorption material for this experimental demonstration due to its easy fabrication process. The saturation power and modulation depth of the prepared SA were measured to be ~28.6 W and ~13.4%, respectively. By incorporating the prepared SA into a Tm-Ho co-doped fiber ring cavity, stable soliton pulses with a temporal width of ~853 fs could be generated at 1912.12 nm. The 3-dB bandwidth of the mode-locked pulse was measured to be ~4.87 nm. This experimental demonstration reaffirms that Bi2Se3 is a superb base material for mid-infrared passive mode-locking even under oxidation.

Key words: topological insulator, mode-locked lasers, femtosecond pulse, fiber lasers

中图分类号:  (Fiber lasers)

  • 42.55.Wd
42.60.Fc (Modulation, tuning, and mode locking) 42.65.-k (Nonlinear optics) 42.70.Mp (Nonlinear optical crystals)