中国物理B ›› 2017, Vol. 26 ›› Issue (10): 104402-104402.doi: 10.1088/1674-1056/26/10/104402

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes

Ming-Can Qian(钱明灿), Shu-Fang Zhang(张淑芳), Hai-Jun Luo(罗海军), Xing-Ming Long(龙兴明), Fang Wu(吴芳), Liang Fang(方亮), Da-Peng Wei(魏大鹏), Fan-Ming Meng(孟凡明), Bao-Shan Hu(胡宝山)   

  1. 1. State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 400044, China;
    2. College of Software, Chongqing College of Electronic Engineering, Chongqing 401331, China;
    3. College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China;
    4. Chongqing Engineering Research Center of Graphene Film Manufacturing, Chongqing 401331, China;
    5. College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331, China
  • 收稿日期:2017-02-19 修回日期:2017-04-06 出版日期:2017-10-05 发布日期:2017-10-05
  • 通讯作者: Shu-Fang Zhang, Hai-Jun Luo, Liang Fang E-mail:roseymcn2000@foxmail.com;lhj19830330@126.com;lfang@cqu.edu.cn
  • 基金资助:
    Project supported by the National High-Technology Research and Development Program of China (Grant No. 2015AA034801), the Foundation of the State Key Laboratory of Mechanical Transmission of Chongqing University (Grant Nos. SKLMT-ZZKT-2017M15, SKLM-ZZKT-2015Z16, and SKLMT-KFKT-201419), the National Natural Science Foundation of China (Grant Nos. 11374359, 11304405, and 11544010), the Natural Science Foundation of Chongqing (Grant Nos. cstc2015jcyjA50035 and cstc2015jcyjA1660), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 106112017CDJQJ328839, 106112014CDJZR14300050, 106112016CDJZR288805, and 106112015CDJXY300002), and the Sharing Fund of Large-scale Equipment of Chongqing University (Grant Nos. 201606150016, 201606150017, and 201606150056).

Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes

Ming-Can Qian(钱明灿)1, Shu-Fang Zhang(张淑芳)2, Hai-Jun Luo(罗海军)1,3, Xing-Ming Long(龙兴明)3, Fang Wu(吴芳)1, Liang Fang(方亮)1, Da-Peng Wei(魏大鹏)4, Fan-Ming Meng(孟凡明)1, Bao-Shan Hu(胡宝山)5   

  1. 1. State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 400044, China;
    2. College of Software, Chongqing College of Electronic Engineering, Chongqing 401331, China;
    3. College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China;
    4. Chongqing Engineering Research Center of Graphene Film Manufacturing, Chongqing 401331, China;
    5. College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 401331, China
  • Received:2017-02-19 Revised:2017-04-06 Online:2017-10-05 Published:2017-10-05
  • Contact: Shu-Fang Zhang, Hai-Jun Luo, Liang Fang E-mail:roseymcn2000@foxmail.com;lhj19830330@126.com;lfang@cqu.edu.cn
  • Supported by:
    Project supported by the National High-Technology Research and Development Program of China (Grant No. 2015AA034801), the Foundation of the State Key Laboratory of Mechanical Transmission of Chongqing University (Grant Nos. SKLMT-ZZKT-2017M15, SKLM-ZZKT-2015Z16, and SKLMT-KFKT-201419), the National Natural Science Foundation of China (Grant Nos. 11374359, 11304405, and 11544010), the Natural Science Foundation of Chongqing (Grant Nos. cstc2015jcyjA50035 and cstc2015jcyjA1660), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 106112017CDJQJ328839, 106112014CDJZR14300050, 106112016CDJZR288805, and 106112015CDJXY300002), and the Sharing Fund of Large-scale Equipment of Chongqing University (Grant Nos. 201606150016, 201606150017, and 201606150056).

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摘要： In order to decrease the Schottky barrier height and sheet resistance between graphene (Gr) and the p-GaN layers in GaN-based light-emitting diodes (LEDs), some transparent thin films with good conductivity and large work function are essential to insert into Gr and p-GaN layers. In this work, the ultra-thin films of four metals (silver (Ag), golden (Au), nickel (Ni), platinum (Pt)) are explored to introduce as a bridge layer into Gr and p-GaN, respectively. The effect of a different combination of Gr/metal transparent conductive layers (TCLs) on the electrical, optical, and thermal characteristics of LED was investigated by the finite element methods. It is found that both the TCLs transmittance and the surface temperature of the LED chip reduces with the increase of the metal thickness, and the transmittance decreases to about 80% with the metal thickness increasing to 2 nm. The surface temperature distribution, operation voltage, and optical output power of the LED chips with different metal/Gr combination were calculated and analyzed. Based on the electrical, optical, and thermal performance of LEDs, it is found that 1.5-nm Ag or Ni or Pt, but 1-nm Au combined with 3 layered (L) Gr is the optimal Gr/metal hybrid transparent and current spreading electrode for ultra-violet (UV) or near-UV LEDs.

关键词: finite element methods, graphene, temperature distribution, transmittance, light-emitting diodes

Abstract: In order to decrease the Schottky barrier height and sheet resistance between graphene (Gr) and the p-GaN layers in GaN-based light-emitting diodes (LEDs), some transparent thin films with good conductivity and large work function are essential to insert into Gr and p-GaN layers. In this work, the ultra-thin films of four metals (silver (Ag), golden (Au), nickel (Ni), platinum (Pt)) are explored to introduce as a bridge layer into Gr and p-GaN, respectively. The effect of a different combination of Gr/metal transparent conductive layers (TCLs) on the electrical, optical, and thermal characteristics of LED was investigated by the finite element methods. It is found that both the TCLs transmittance and the surface temperature of the LED chip reduces with the increase of the metal thickness, and the transmittance decreases to about 80% with the metal thickness increasing to 2 nm. The surface temperature distribution, operation voltage, and optical output power of the LED chips with different metal/Gr combination were calculated and analyzed. Based on the electrical, optical, and thermal performance of LEDs, it is found that 1.5-nm Ag or Ni or Pt, but 1-nm Au combined with 3 layered (L) Gr is the optimal Gr/metal hybrid transparent and current spreading electrode for ultra-violet (UV) or near-UV LEDs.

Key words: finite element methods, graphene, temperature distribution, transmittance, light-emitting diodes

中图分类号:  (Analytical and numerical techniques)

  • 44.05.+e
44.90.+c (Other topics in heat transfer)