中国物理B ›› 2018, Vol. 27 ›› Issue (6): 67203-067203.doi: 10.1088/1674-1056/27/6/067203

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electrical controllable spin valves in a zigzag silicene nanoribbon ferromagnetic junction

Lin Zhang(张林)   

  1. 1 Department of Applied Physics, College of Science, Nanjing Forestry University, Nanjing 210037, China;
    2 Department of Physics and Institute of Theoretical Physics, Nanjing Normal University, Nanjing 210023, China
  • 收稿日期:2018-02-25 修回日期:2018-03-25 出版日期:2018-06-05 发布日期:2018-06-05
  • 通讯作者: Lin Zhang E-mail:lzhang2010@163.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No.11547127),the China Postdoctoral Science Foundation (Grant No.2017M611852),and the Natural Science Foundation for Colleges and Universities in Jiangsu Province,China (Grant No.13KJB140005).

Electrical controllable spin valves in a zigzag silicene nanoribbon ferromagnetic junction

Lin Zhang(张林)1,2   

  1. 1 Department of Applied Physics, College of Science, Nanjing Forestry University, Nanjing 210037, China;
    2 Department of Physics and Institute of Theoretical Physics, Nanjing Normal University, Nanjing 210023, China
  • Received:2018-02-25 Revised:2018-03-25 Online:2018-06-05 Published:2018-06-05
  • Contact: Lin Zhang E-mail:lzhang2010@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No.11547127),the China Postdoctoral Science Foundation (Grant No.2017M611852),and the Natural Science Foundation for Colleges and Universities in Jiangsu Province,China (Grant No.13KJB140005).

摘要: We propose two possible spin valves based on a zigzag silicene nanoribbon (ZSR) ferromagnetic junction. By using the Landauer-Bütikker formula, we calculate the spin-resolved conductance spectrum of the system and find that the spin transport is crucially dependent on the band structure of the ZSR tuned by a perpendicular electric field. When the ZSR is in the topological insulator phase under a zero electric field, the low-energy spin transport and its ON and OFF states in the tunneling junction mainly rely on the valley valve effect and the edge state of the energy band, which can be electrically modulated by the Fermi level, the spin-orbit coupling, and the local magnetization. When a nonzero perpendicular electric field is applied, the ZSR is a band insulator with a finite energy gap, the spin switch phenomenon is still preserved in the device and it does not come from the valley valve effect, but from the energy gap opened by the perpendicular electric field. The proposed device might be designed as electrical tunable spin valves to manipulate the spin degree of freedom of electrons in silicene.

关键词: zigzag silicene nanoribbon, spin valve, spin-orbit coupling, conductance

Abstract: We propose two possible spin valves based on a zigzag silicene nanoribbon (ZSR) ferromagnetic junction. By using the Landauer-Bütikker formula, we calculate the spin-resolved conductance spectrum of the system and find that the spin transport is crucially dependent on the band structure of the ZSR tuned by a perpendicular electric field. When the ZSR is in the topological insulator phase under a zero electric field, the low-energy spin transport and its ON and OFF states in the tunneling junction mainly rely on the valley valve effect and the edge state of the energy band, which can be electrically modulated by the Fermi level, the spin-orbit coupling, and the local magnetization. When a nonzero perpendicular electric field is applied, the ZSR is a band insulator with a finite energy gap, the spin switch phenomenon is still preserved in the device and it does not come from the valley valve effect, but from the energy gap opened by the perpendicular electric field. The proposed device might be designed as electrical tunable spin valves to manipulate the spin degree of freedom of electrons in silicene.

Key words: zigzag silicene nanoribbon, spin valve, spin-orbit coupling, conductance

中图分类号:  (Spin polarized transport in semiconductors)

  • 72.25.Dc
72.80.Vp (Electronic transport in graphene) 72.25.Mk (Spin transport through interfaces) 73.43.Qt (Magnetoresistance)