中国物理B ›› 2018, Vol. 27 ›› Issue (6): 67301-067301.doi: 10.1088/1674-1056/27/6/067301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Enhanced photoresponse performance in Ga/Ga2O3 nanocomposite solar-blind ultraviolet photodetectors

Shu-Juan Cui(崔书娟), Zeng-Xia Mei(梅增霞), Yao-Nan Hou(侯尧楠), Quan-Sheng Chen(陈全胜), Hui-Li Liang(梁会力), Yong-Hui Zhang(张永晖), Wen-Xing Huo(霍文星), Xiao-Long Du(杜小龙)   

  1. 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2018-02-09 修回日期:2018-03-06 出版日期:2018-06-05 发布日期:2018-06-05
  • 通讯作者: Zeng-Xia Mei, Xiao-Long Du E-mail:zxmei@iphy.ac.cn;xldu@iphy.ac.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos.11674405 and 11675280) and the Fund from the Laboratory of Microfabrication in Institute of Physics,Chinese Academy of Sciences.

Enhanced photoresponse performance in Ga/Ga2O3 nanocomposite solar-blind ultraviolet photodetectors

Shu-Juan Cui(崔书娟)1,2, Zeng-Xia Mei(梅增霞)1, Yao-Nan Hou(侯尧楠)1, Quan-Sheng Chen(陈全胜)1,2, Hui-Li Liang(梁会力)1, Yong-Hui Zhang(张永晖)1,2, Wen-Xing Huo(霍文星)1,2, Xiao-Long Du(杜小龙)1,2   

  1. 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2018-02-09 Revised:2018-03-06 Online:2018-06-05 Published:2018-06-05
  • Contact: Zeng-Xia Mei, Xiao-Long Du E-mail:zxmei@iphy.ac.cn;xldu@iphy.ac.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos.11674405 and 11675280) and the Fund from the Laboratory of Microfabrication in Institute of Physics,Chinese Academy of Sciences.

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摘要：

In the present work, we explore the solar-blind ultraviolet (UV) photodetectors (PDs) with enhanced photoresponse, fabricated on Ga/Ga2O3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-annealing the laminated Ga2O3/Ga/Ga2O3 structures, Ga/Ga2O3 nanocomposite films incorporated with Ga nanospheres are obtained. For the prototype PD, it is found that the photocurrent and photoresponsivity will first increase and then decrease monotonically with the thickness of the pre-buried Ga layer increasing. Each of all PDs shows a spectrum response peak at 260 nm, demonstrating the ability to detect solar-blind UV light. Adjustable photoresponse enhancement factors are achieved by means of the surface plasmon in the nanocomposite films. The PD with a 20 nm thick Ga interlayer exhibits the best solar-blind UV photoresponse characteristics with an extremely low dark current of 8.52 pA at 10-V bias, a very high light-to-dark ratio of~8×105, a large photoresponsivity of 2.85 A/W at 15-V bias, and a maximum enhancement factor of~220. Our research provides a simple and practical route to high performance solar-blind UV PDs and potential applications in the field of optoelectronics.

关键词: Ga/Ga2O3, nanocomposite, surface plasmon, solar-blind photodetector

Abstract:

In the present work, we explore the solar-blind ultraviolet (UV) photodetectors (PDs) with enhanced photoresponse, fabricated on Ga/Ga2O3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-annealing the laminated Ga2O3/Ga/Ga2O3 structures, Ga/Ga2O3 nanocomposite films incorporated with Ga nanospheres are obtained. For the prototype PD, it is found that the photocurrent and photoresponsivity will first increase and then decrease monotonically with the thickness of the pre-buried Ga layer increasing. Each of all PDs shows a spectrum response peak at 260 nm, demonstrating the ability to detect solar-blind UV light. Adjustable photoresponse enhancement factors are achieved by means of the surface plasmon in the nanocomposite films. The PD with a 20 nm thick Ga interlayer exhibits the best solar-blind UV photoresponse characteristics with an extremely low dark current of 8.52 pA at 10-V bias, a very high light-to-dark ratio of~8×105, a large photoresponsivity of 2.85 A/W at 15-V bias, and a maximum enhancement factor of~220. Our research provides a simple and practical route to high performance solar-blind UV PDs and potential applications in the field of optoelectronics.

Key words: Ga/Ga2O3, nanocomposite, surface plasmon, solar-blind photodetector

中图分类号:  (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))

  • 73.20.Mf
85.60.Gz (Photodetectors (including infrared and CCD detectors)) 71.20.Nr (Semiconductor compounds) 73.40.Sx (Metal-semiconductor-metal structures)