中国物理B ›› 2018, Vol. 27 ›› Issue (11): 117701-117701.doi: 10.1088/1674-1056/27/11/117701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Fabrication and characterization of Ge–Ga–Sb–S glass microsphere lasers operating at~1.9 μm

Kun Yang(杨坤), Shixun Dai(戴世勋), Yuehao Wu(吴越豪), Qiuhua Nie(聂秋华)   

  1. 1 Advanced Technology Research Institute, Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, China;
    2 Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo 315211, China
  • 收稿日期:2018-07-11 修回日期:2018-08-16 出版日期:2018-11-05 发布日期:2018-11-05
  • 通讯作者: Yuehao Wu, Qiuhua Nie E-mail:wuyuehao@nbu.edu.cn;nieqiuhua@nbu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 61605094), the Key Program of National Natural Science Foundation of China (Grant No. 61435009), the Natural Science Foundation of Zhejiang Province, China (Grant No. LQ15F050002), and K. C. Wong Magna Fund in Ningbo University, China.

Fabrication and characterization of Ge–Ga–Sb–S glass microsphere lasers operating at~1.9 μm

Kun Yang(杨坤)1, Shixun Dai(戴世勋)1,2, Yuehao Wu(吴越豪)1,2, Qiuhua Nie(聂秋华)1,2   

  1. 1 Advanced Technology Research Institute, Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, China;
    2 Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo 315211, China
  • Received:2018-07-11 Revised:2018-08-16 Online:2018-11-05 Published:2018-11-05
  • Contact: Yuehao Wu, Qiuhua Nie E-mail:wuyuehao@nbu.edu.cn;nieqiuhua@nbu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 61605094), the Key Program of National Natural Science Foundation of China (Grant No. 61435009), the Natural Science Foundation of Zhejiang Province, China (Grant No. LQ15F050002), and K. C. Wong Magna Fund in Ningbo University, China.

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摘要：

We report the fabrication and characterization of germanium gallium antimony sulfide (Ge-Ga-Sb-S or 2S2G, doped with Tm3+ ions) microsphere lasers operating at~1.9-μm spectral band. Compared to the chalcogenide glasses that are used in previous microsphere lasers, this 2S2G glass has a lower transition temperature and a higher characteristic temperature. This implies that 2S2G microspheres can be fabricated at lower temperatures and the crystallization problem in the sphere-forming process can be alleviated. We show that hundreds of high-quality microspheres (quality factors higher than 105) of various diameters can be produced simultaneously via a droplet sphere-forming method. Microspheres are coupled with silica fiber tapers for optical characterizations. We demonstrate that Whispering Gallery mode (WGM) patterns in the 1.7-2.0 μm band can be conveniently obtained and that once the pump power exceeds a threshold, single-and multi-mode microsphere lasers can be generated. For a typical microsphere whose diameter is 258.64 μm, we demonstrate its laser threshold is 0.383 mW, the laser wavelength is 1907.38 nm, and the thermal sensitivity of the microsphere laser is 29.56 pm/℃.

关键词: chalcogenides, microspheres laser, whispering gallery modes

Abstract:

We report the fabrication and characterization of germanium gallium antimony sulfide (Ge-Ga-Sb-S or 2S2G, doped with Tm3+ ions) microsphere lasers operating at~1.9-μm spectral band. Compared to the chalcogenide glasses that are used in previous microsphere lasers, this 2S2G glass has a lower transition temperature and a higher characteristic temperature. This implies that 2S2G microspheres can be fabricated at lower temperatures and the crystallization problem in the sphere-forming process can be alleviated. We show that hundreds of high-quality microspheres (quality factors higher than 105) of various diameters can be produced simultaneously via a droplet sphere-forming method. Microspheres are coupled with silica fiber tapers for optical characterizations. We demonstrate that Whispering Gallery mode (WGM) patterns in the 1.7-2.0 μm band can be conveniently obtained and that once the pump power exceeds a threshold, single-and multi-mode microsphere lasers can be generated. For a typical microsphere whose diameter is 258.64 μm, we demonstrate its laser threshold is 0.383 mW, the laser wavelength is 1907.38 nm, and the thermal sensitivity of the microsphere laser is 29.56 pm/℃.

Key words: chalcogenides, microspheres laser, whispering gallery modes

中图分类号:  (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)

  • 77.84.Bw
42.55.Sa (Microcavity and microdisk lasers) 42.82.Et (Waveguides, couplers, and arrays)