[1] |
Hossain M, Nosaeva K, Janke B, Weimann N, Krozer V and Heinrich W 2016 IEEE Microw. Wirel. Compon. Lett. 26
|
[2] |
Li O P, Zhang Y, Xu R M, Cheng W, Wang Y, Niu, B and Lu H Y 2016 Chin. Phys. B 25 058401
doi: 10.1088/1674-1056/25/5/058401
|
[3] |
Yamamoto K, Miyashita M, Maki S, Takahashi Y, Fujii K, Fujiwara S, Kitabayashi F, Suzuki S, Shimura T, Hieda M and Seki.H 2016 IEEE Trans. Microw. Theory Tech. 64 810
|
[4] |
Kang S, Kim D, Urteaga M and Seo M 2017 Proc. IEEE Int. Symp. Radio-Freq. Integr. Technol. (RFIT), August 30-Septemper 1, 2017, Seoul, South Korea, p. 25
|
[5] |
Ge J, Liu H G, Su Y B, Cao Y X and Jin Z 2012 Chin. Phys. B 21 058501
doi: 10.1088/1674-1056/21/5/058501
|
[6] |
Luong M D, Ishikawa R, Takayama Y and Honjo K 2017 IEEE Trans. Circuits Syst. I Reg. Papers 64 1140
doi: 10.1109/TCSI.2016.2637406
|
[7] |
Coquillat D, Nodjiadjim V, Blin S, Konczykowska A, Dyakonova N, Consejo C, Nouvel P, Pénarier A, Torres J, But D, Ruffenach S, Teppe F, Riet M, Muraviev A, Gutin A, Shur M and Knap W 2016 Int. J. High Speed Electron. Syst. 25 164001
|
[8] |
Urteaga M, Griffith Z, Seo M, Hacker J and Rodwell M J W 2017 Proc. IEEE 105 1051
doi: 10.1109/JPROC.2017.2692178
|
[9] |
Lin L, Zhou L, Wang R, Tong L and Yin W Y 2015 IEEE Trans. Microw. Theory Tech. 63 1951
doi: 10.1109/TMTT.2015.2424695
|
[10] |
Kim J, Jeon S, Kim M, Urteaga M and Jeong J 2015 IEEE Trans. Terahertz Sci. Technol. 5 215
doi: 10.1109/TTHZ.2014.2387259
|
[11] |
Baek S, Ahn H, Nam I, Ryu N, Lee H D, Park B and Lee O 2016 IEEE Microw. Wirel. Compon. Lett. 26 921
doi: 10.1109/LMWC.2016.2615361
|
[12] |
Grandchamp B, Nodjiadjim V, Zaknoune M, Koné G A, Hainaut C, Godin J, Riet M, Zimmer T and Maneux C 2011 IEEE Trans. Electron. Devices 58 2566
doi: 10.1109/TED.2011.2150224
|
[13] |
Su J L and Tseng H C 2017 IEEE Trans. Device Mater. Rel. 17 678
doi: 10.1109/TDMR.2017.2753261
|
[14] |
Sukwon S, Peake G M, Keeler G A, Geib K M, Briggs R D, Beechem T E, Shaffer R A, Clevenger J, Patrizi G A, Klem J F, Tauke-Pedretti A and Nordquist C D 2016 IEEE Trans. Compon. Packag. Manuf. Technol. 6 740
doi: 10.1109/TCPMT.2016.2541615
|
[15] |
Koné G A Grandchamp B Hainaut C Marc F Maneux C Labat N Zimmer T Nodjiadjim V Riet M and Godinb J 2011 Microelectron. Reliab. 9 1730
|
[16] |
Kone G A, Maneux C, Labat N, Zimmer T, Grandchamp B, Frijlink P and Maher H 2012 Int. Conf. Indium Phosphide Relat. Mater., August 27-30, 2012, Santa Barbara, USA, p. 208
|
[17] |
Tao N, Lin B, Lee C, Henderson T and Lin B 2015 Int. J. Microw. Wirel. Technol. 7 279
doi: 10.1017/S1759078715000495
|
[18] |
Chivukula V, Teeter D, Scott P, Shah B and Ji M 2014 Microelectron. Reliab. 54 2688
doi: 10.1016/j.microrel.2014.09.015
|
[19] |
Liu X, Yuan J and Liou J 2011 Microelectron. Reliab. 51 2147
doi: 10.1016/j.microrel.2011.07.019
|
[20] |
Ozalas M T 2014 Proc. Compound Semicond. Integr. Circuit Symp. (CSIC), October 19-22, 2014, La Jolla, USA, p. 1
|
[21] |
Li P, Pileggi L T, Asheghi M and Chandra R 2006 IEEE Trans. Comput-Aided Design Integr. Circuits Syst. 25 1763
doi: 10.1109/TCAD.2005.858276
|
[22] |
Yu W, Zhang T, Yuan X and Qian H 2013 IEEE Trans. Comput-Aided Design Integr. Circuits Syst. 32 2014
doi: 10.1109/TCAD.2013.2273987
|
[23] |
Feng Z and Li P 2013 IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 21 1526
|
[24] |
Liu S S Y, Luo R G, Aroonsantidecha S, Chin C Y and Chen H M 2014 IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 22 1404
|
[25] |
Zhang C, Han Q G, Ma H A, Xiao H Y, Li R, Li Z C, Tian Y and Jia X P 2010 Acta Phys. Sin. 59 1923 (in Chinese)
|
[26] |
Zheng Y B, Yao J Q, Zhang L, Wang Y, Wen W Q, Jing L and Di Z G 2012 Chin. Phys. Lett. 29 024203
doi: 10.1088/0256-307X/29/2/024203
|
[27] |
Grasser T and Selberherr S 2000 Proc. Int. Semicond. Conf., October 10-14, 2000, Sinaia, Romania, p. 43
|
[28] |
Zhang J C, Zhang Y M, Lu H L, Zhang Y M, Xiao G H and Ye G P 2014 J. Semicond. 35 08005
|
[29] |
Palankovski V 2000 "Simulation of heterojunction bipolar transistors" Ph. D. Dissertation (Vienna:Vienna University of Technology)
|
[30] |
Harrison I, Dahlstrom M, Krishnan S, Griffith Z, Kim Y M and Rodwell M J W 2004 IEEE Trans. Electron Dev. 51 529
doi: 10.1109/TED.2004.824686
|
[31] |
Matsuda T, Hanai H, Tohjo T, Iwata H, Kondo D, Hatakeyama T, Ishizuka M and Ohzone T 2014 IEEE Trans. Semicond. Manuf. 27 151
doi: 10.1109/TSM.2014.2303820
|
[32] |
Cheng Y K and Kang S M 2000 IEEE Trans. Comput-Aided Design Integr. Circuits Syst. 19 1211
doi: 10.1109/43.875333
|