The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology

doi:10.1088/1674-1056/26/8/088401

中国物理B ›› 2017, Vol. 26 ›› Issue (8): 88401-088401.doi: 10.1088/1674-1056/26/8/088401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology

Jia-Xin Zheng(郑佳欣), Xiao-Hua Ma(马晓华), Yang Lu(卢阳), Bo-Chao Zhao(赵博超), Heng-Shuang Zhang(张恒爽), Meng Zhang(张濛), Li-Xiang Chen(陈丽香), Qing Zhu(朱青), Yue Hao(郝跃)

1 School of Advanced Material and Nanotechnology, Xidian University, Xi'an 710071, China;
2 School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2017-03-20 修回日期:2017-05-03 出版日期:2017-08-05 发布日期:2017-08-05
通讯作者: Xiao-Hua Ma E-mail:xhma@xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002 and 61474091) and the National High Technology Research and Development Program of China (Grant No. 2015AA016801).

The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology

Jia-Xin Zheng(郑佳欣)¹, Xiao-Hua Ma(马晓华)¹, Yang Lu(卢阳)², Bo-Chao Zhao(赵博超)², Heng-Shuang Zhang(张恒爽)², Meng Zhang(张濛)¹, Li-Xiang Chen(陈丽香)¹, Qing Zhu(朱青)¹, Yue Hao(郝跃)²

1 School of Advanced Material and Nanotechnology, Xidian University, Xi'an 710071, China;
2 School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2017-03-20 Revised:2017-05-03 Online:2017-08-05 Published:2017-08-05
Contact: Xiao-Hua Ma E-mail:xhma@xidian.edu.cn
About author:0.1088/1674-1056/26/8/
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002 and 61474091) and the National High Technology Research and Development Program of China (Grant No. 2015AA016801).

摘要/Abstract

摘要：

The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology has been investigated deeply. The fabricated 1-nH spiral inductor on SiC substrate demonstrates a self-resonant frequency of 51.6 GHz, with a peak Q-fact of 12.14 at 22.1 GHz. From the S-parameters measurements, the exponential decay phenomenon is observed for L, Q-factor, and SRF with the air-bridge height decreasing, and an analytic expression is concluded to exactly fit the measured data which can be used to predict the performance of the spiral inductor. All the coefficients in the formula have specific meaning. By means of establishing the lumped model, the parasitic coupling capacitance of the air-bridge has been extracted and presents the exponential decay with the air-bridge heights decreasing which indicates that this capacitor is directly related to the coupling effect of the air-bridge. Through the electromagnetic field distribution simulation, the details of the electric field around the air-bridge have been presented which demonstrate the formation and the variation principles of the coupling effect.

关键词: coupling effect, air-bridge, broadband spiral inductor, exponential decay, SiC, MMIC

Abstract:

Key words: coupling effect, air-bridge, broadband spiral inductor, exponential decay, SiC, MMIC

中图分类号: (Passive circuit components)

84.32.-y

84.32.Hh (Inductors and coils; wiring) 84.40.Dc (Microwave circuits) 85.30.De (Semiconductor-device characterization, design, and modeling)

郑佳欣, 马晓华, 卢阳, 赵博超, 张恒爽, 张濛, 陈丽香, 朱青, 郝跃. The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology[J]. 中国物理B, 2017, 26(8): 88401-088401.

Jia-Xin Zheng(郑佳欣), Xiao-Hua Ma(马晓华), Yang Lu(卢阳), Bo-Chao Zhao(赵博超), Heng-Shuang Zhang(张恒爽), Meng Zhang(张濛), Li-Xiang Chen(陈丽香), Qing Zhu(朱青), Yue Hao(郝跃). The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology[J]. Chin. Phys. B, 2017, 26(8): 88401-088401.

参考文献 15

[1]	Fang M, Wang J Y, Lin S X, Meng D, Cai Y, Hao Y L and Wen C P 2011 IEEE 4th International Symposium on Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), November 1-3, 2011, Beijing, China, p. 400
[2]	Burghartz J N, Edelstein D C, Jenkins K A and Kwark Y H 1997 IEEE Transactions on Microwave Theory and Techniques 45 1961
[3]	Ribas R P, Lescot J, Leclercq J L, Bennouri N, Karam J M and Courtois B 1998 IEEE Electron Dev. Lett. 19 285
[4]	Shepherd P R 1986 IEEE Transactions on Microwave Theory and Technique MTT-34 467
[5]	Tang Y, Liu B, Zhang L, Pan J, Yang L W and Wang Y 2008 Solid-State Electron. 52 1058
[6]	Teo T H, Choi Y B, Liao H L, Xiong Y Z and Fu J S 2004 Solid-State Electron. 48 1643
[7]	Hsu H M and Hsieh M M 2008 Solid-State Electron. 52 998
[8]	Cao M Y, Zhang K, Chen Y H, Zhang J C, Ma X H and Hao Y 2014 Chin. Phys. B 23 037305
[9]	Zheng J X, Ma X H, Lu Y, Zhao B C, Zhang H H, Zhang M, Cao M Y and Hao Y 2015 Chin. Phys. B 24 107305
[10]	Huo X, Chen K J and Chan P C H 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, June, 2002, p. 403
[11]	Zhang Z Q and Liao X P 2012 IEEE Sensors Journal 12 1853
[12]	Shih Y C, Pao C K and Itoh T 1992 IEEE MTT-S International Microwave Symposium Digest, June, 1-5, 1992, Albuquerque, NM, USA, 3 p. 1345
[13]	Hettak K, Ross T, Elgaid K, Thayne I G and Wight J 2011 Asia-Pacific Microwave Conference, December 5-8, 2011, Melbourne, Australia, p. 1070
[14]	Goncharenko A V, Lozovski V Z and Venger E F 2000 Opt. Commun. 174 19
[15]	Jin J M 2002 The Finite Element Method in Electromagnetics (New York: John Wiley & Sons. Inc.)

The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology

The coupling effect of air-bridges on broadband spiral inductors in SiC-based MMIC technology

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