A simulation study on p-doping level of polymer host material in P3HT: PCBM bulk heterojunction solar cells

doi:10.1088/1674-1056/26/4/048802

摘要/Abstract

摘要： In this study, we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene) (P3HT) and a methanofullerene derivative (PCBM). Organic semiconductors are also known to be not pure and they have defects and impurities, some of them are being charged and act as p-type or n-type dopants. Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings (N_d) that consist of 5×10¹⁷ cm^-3, 10¹⁸ cm^-3, and 5×10¹⁸ cm^-3. We perform the analysis of the doping concentration through the drift-diffusion model, and calculate the current and voltage doping dependency. We find that at three different n-dopant levels, optimum p-type doping is about N_p=6×10¹⁸ cm^-3. Simulation results have shown that by increasing doping level, V_oc monotonically increases by doping. Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at N_p=3×10¹⁸ cm^-3. Moreover, this paper demonstrates that the optimum value for the p-doping is about N_p=6×10¹⁸ cm^-3 and optimum value for n-dopant is N_d=10¹⁸ cm^-3, respectively. The simulated results confirm that doping considerably affects the performance of organic solar cells.

关键词: organic photovoltaics, charge transport, doping, finite difference method

Abstract: In this study, we investigate the influence of doping on the charge transfer and device characteristics parameters in the bulk heterojunction solar cells based on poly(3-hexylthiophene) (P3HT) and a methanofullerene derivative (PCBM). Organic semiconductors are also known to be not pure and they have defects and impurities, some of them are being charged and act as p-type or n-type dopants. Calculations of the solar cell characteristics parameters versus the p-doping level have been done at three different n-dopings (N_d) that consist of 5×10¹⁷ cm^-3, 10¹⁸ cm^-3, and 5×10¹⁸ cm^-3. We perform the analysis of the doping concentration through the drift-diffusion model, and calculate the current and voltage doping dependency. We find that at three different n-dopant levels, optimum p-type doping is about N_p=6×10¹⁸ cm^-3. Simulation results have shown that by increasing doping level, V_oc monotonically increases by doping. Cell efficiency reaches its maximum at somewhat higher doping as FF has its peak at N_p=3×10¹⁸ cm^-3. Moreover, this paper demonstrates that the optimum value for the p-doping is about N_p=6×10¹⁸ cm^-3 and optimum value for n-dopant is N_d=10¹⁸ cm^-3, respectively. The simulated results confirm that doping considerably affects the performance of organic solar cells.

Key words: organic photovoltaics, charge transport, doping, finite difference method

中图分类号: (Organic photovoltaics)

88.40.jr

91.60.Tn (Transport properties) 61.72.-y (Defects and impurities in crystals; microstructure) 02.70.Bf (Finite-difference methods)

Hossein Movla,Mohammad Babazadeh. A simulation study on p-doping level of polymer host material in P3HT: PCBM bulk heterojunction solar cells[J]. 中国物理B, 2017, 26(4): 48802-048802.

Hossein Movla, Mohammad Babazadeh. A simulation study on p-doping level of polymer host material in P3HT: PCBM bulk heterojunction solar cells[J]. Chin. Phys. B, 2017, 26(4): 48802-048802.

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