Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage

doi:10.1088/1674-1056/26/2/028102

中国物理B ›› 2017, Vol. 26 ›› Issue (2): 28102-028102.doi: 10.1088/1674-1056/26/2/028102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage

I Orak, A Kocyigit, Ş Alındal

1 Bingöl University, Vocational School of Health Services, 12000 Bingöl, Turkey;
2 Bingöl University, Faculty of Sciences and Arts, Department of Physics, 12000 Bingöl, Turkey;
3 Igdir University, Engineering Faculty, Department of Electrical Electronic Engineering, 76000 Igdir, Turkey;
4 Gazi Universty, Faculty of Sciences, Department of Physics, 06500, Ankara, Turkey

收稿日期:2016-09-20 修回日期:2016-10-13 出版日期:2017-02-05 发布日期:2017-02-05
通讯作者: A Kocyigit E-mail:adem.kocyigit@igdir.edu.tr

Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage

I Orak^1,2, A Kocyigit³, Ş Alındal⁴

1 Bingöl University, Vocational School of Health Services, 12000 Bingöl, Turkey;
2 Bingöl University, Faculty of Sciences and Arts, Department of Physics, 12000 Bingöl, Turkey;
3 Igdir University, Engineering Faculty, Department of Electrical Electronic Engineering, 76000 Igdir, Turkey;
4 Gazi Universty, Faculty of Sciences, Department of Physics, 06500, Ankara, Turkey

Received:2016-09-20 Revised:2016-10-13 Online:2017-02-05 Published:2017-02-05
Contact: A Kocyigit E-mail:adem.kocyigit@igdir.edu.tr

摘要/Abstract

摘要： Au/ZnO/n-type Si device is obtained using atomic layer deposition (ALD) for ZnO layer, and some main electrical parameters are investigated, such as surface/interface state (N_ss), barrier height (Φ_b), series resistance (R_s), donor concentration (N_d), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 kHz to 1 MHz and the direct current (DC) bias voltages in a range from -2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters, such as dielectric constant (ε"), dielectric loss (ε"), loss tangent (tan δ), the real and imaginary parts of electric modulus (M' and M"), and alternating current (AC) electrical conductivity (σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.

关键词: Au/ZnO/n-Si device, dielectric properties, polarization process, frequency and voltage dependence

Abstract: Au/ZnO/n-type Si device is obtained using atomic layer deposition (ALD) for ZnO layer, and some main electrical parameters are investigated, such as surface/interface state (N_ss), barrier height (Φ_b), series resistance (R_s), donor concentration (N_d), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 kHz to 1 MHz and the direct current (DC) bias voltages in a range from -2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters, such as dielectric constant (ε"), dielectric loss (ε"), loss tangent (tan δ), the real and imaginary parts of electric modulus (M' and M"), and alternating current (AC) electrical conductivity (σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies.

Key words: Au/ZnO/n-Si device, dielectric properties, polarization process, frequency and voltage dependence

中图分类号: (II-VI semiconductors)

81.05.Dz

85.30.-z (Semiconductor devices) 85.30.Hi (Surface barrier, boundary, and point contact devices) 85.30.Kk (Junction diodes)

I Orak, A Kocyigit, Ş Alındal. Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage[J]. 中国物理B, 2017, 26(2): 28102-028102.

I Orak, A Kocyigit, Ş Alındal. Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage[J]. Chin. Phys. B, 2017, 26(2): 28102-028102.

参考文献 37

[1]	Kabra V, Aamir L and Malik M M 2014 Beilstein J. Nanotechnol. 5 2216
[2]	Jin W, Zhang K, Gao Z, Li Y, Yao L, Wang Y and Dai L 2015 ACS Appl. Mater. Interfaces 7 13131
[3]	Tatar B, Bulgurcuoğlu A E, Gökdemir P, Aydoğan P, Yilmazer D, Özdemir O and Kutlu K 2009 Int. J. Hydrogen Energy 34 5208
[4]	Sharma G D, Sharma S K and Roy M S 2004 Thin Solid Films 468 208
[5]	Ren N, Sheng K, Zhang J M and Peng F Z 2013 IEEE Energy Conversion Congress and Exposition (IEEE) p. 2871
[6]	Chen L, Deng J, Gao H, Yang Q, Wang G, Kong L, Cui M and Zhang Z 2016 J. Mater. Sci. Mater. Electron. 27 4275
[7]	Yadav A B, Pandey A, Somvanshi D and Jit S 2015 IEEE Trans. Electron Devices 62 1879
[8]	Orak İ, Ejderha K and Turut A 2015 Curr. Appl. Phys. 15 1054
[9]	Gümüş A, Ersöz G, Yücedağ İ, Bayrakdar S and Altindal Ş 2015 J. Korean Phys. Soc. 67 889
[10]	Kaya A, Alialy S, Demirezen S, Balbaşi M, Yerişkin S A and Aytimur A 2016 Ceram. Int. 42 3322
[11]	Rajan L, Periasamy C and Sahula V 2016 IEEE Trans. Nanotechnol. 15 201
[12]	Pradel K C, Jevasuwan W, Suwardy J, Bando Y, Fukata N and Wang Z L 2016 Chem. Phys. Lett. 658 158
[13]	Marimuthu T, Anandhan N, Thangamuthu R, Mummoorthi M and Ravi G 2016 J. Alloys Compd. 677 211
[14]	Su Y Q, Zhu Y, Yong D, Chen M, Su L, Chen A, Wu Y, Pan B and Tang Z 2016 J. Phys. Chem. Lett. 7 1484
[15]	Li X B, Zhang X, Li L C, Huang L L, Zhang W, Ye J D and Hong J G 2016 Mater. Lett. 175 122
[16]	Zhang Z L, Zheng G, Qu F Y and Wu X 2012 Chin. Phys. B 21 098104
[17]	Ameen S, Park D-R, Shaheer Akhtar M and Shin H S 2016 Mater. Lett. 164 562
[18]	Boujnah M, Boumdyan M, Naji S, Benyoussef A, El Kenz A and Loulidi M 2016 J. Alloys Compd. 671 560
[19]	Liu C Y, Xu H Y, Sun Y, Ma J G and Liu Y C 2014 Opt. Express 22 16731
[20]	He J, Cheng C and Hu J 2016 AIP Adv. 6 30701
[21]	Singh S K, Hazra P, Tripathi S and Chakrabarti P 2016 Superlattices Microstruct. 91 62
[22]	Park Y J, Song H, Ko K B, Ryu B D, Cuong T V and Hong C H 2016 J. Nanomater. 2016 1
[23]	Şafak-Asar Y, Asar T, Altındal Ş and Özçelik S 2015 J. Alloys Compd. 628 442
[24]	Demirezen S 2013 Appl. Phys. A 112 8273
[25]	Tanrıkulu E E, Yıldız D E, Günen A and Altındal Ş 2015 Phys. Scr. 90 95801
[26]	Cherif A, Jomni S, Mliki N and Beji L 2013 Physica B: Condens. Matter 429 79
[27]	Yücedağ İ, Kaya A, Altındal Ş and Uslu I 2014 Chin. Phys. B 23 047304
[28]	Zeyrek S, Acaroğlu E, Altındal Ş, Birdoğan S and Bülbül M M 2013 Curr. Appl. Phys. 13 1225
[29]	Nicollian E H and Brews J R 2003 MOS (metal oxide semiconductor) physics and technology (Wiley-Interscience)
[30]	Sze S M 1981 Physics of Semiconductor Devices (Newyork: Wiley)
[31]	Ataseven T, Tataroglu A, Memmedli T and Özçelik S 2012 J. Optoelectron. Adv. Mater. 14 640
[32]	Yıldız D E and Dökme I 2011 J. Appl. Phys. 110 14507
[33]	Yücedağ İ, Ersöz G, Gümüş A and Altındal Ş 2015 Int. J. Mod. Phys. B 29 1550075
[34]	Kaya A, Altındal Ş, Asar Y Ş and Sönmez Z 2013 Chin. Phys. Lett. 30 017301
[35]	Bülbül M M 2007 Microelectron. Eng. 84 124
[36]	Altındal Yerişkin S, Balbaşi M and Tataroğlu A 2016 J. Appl. Polym. Sci. 133
[37]	Baraz N, Yücedağ İ, Azizian-Kalandaragh Y and Altındal Ş 2016 J. Mater. Sci.: Mater. Electron. 1-7

Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage

Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 37

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Sharon V S, Veena Gopalan E, and Malini K A. Structural evolution-enabled BiFeO₃ modulated by strontium doping with enhanced dielectric, optical and superparamagneticproperties by a modified sol-gel method[J]. 中国物理B, 2023, 32(3): 37504-037504.
[2]	Jie Li(李颉), Bing Lu(卢冰), Ying Zhang(张颖), Jian Wu(武剑), Yan Yang(杨燕), Xue-Ning Han(韩雪宁), Dan-Dan Wen(文丹丹), Zheng Liang(梁峥), and Huai-Wu Zhang(张怀武). Enhancement of magnetic and dielectric properties of low temperature sintered NiCuZn ferrite by Bi₂O₃-CuO additives[J]. 中国物理B, 2022, 31(4): 47502-047502.
[3]	Xu Zhang(张旭), Ningning Liu(刘宁宁), Zongyuan Tang(唐宗元), Yingning Miao(缪应宁), Xiangshen Meng(孟祥申), Zhenghong He(何正红), Jian Li(李建), Minglei Cai(蔡明雷), Tongzhou Zhao(赵桐州), Changyong Yang(杨长勇), Hongyu Xing(邢红玉), and Wenjiang Ye(叶文江). Stability of liquid crystal systems doped with γ-Fe₂O₃ nanoparticles[J]. 中国物理B, 2021, 30(9): 96101-096101.
[4]	Zhongzhe Liu(刘钟喆), Libin Gao(高莉彬), Kexin Liang(梁可欣), Zhen Fang(方针), Hongwei Chen(陈宏伟), and Jihua Zhang(张继华). Effect of external electric field on crystalline structure anddielectric properties of Bi_1.5MgNb_1.5O₇ thin films[J]. 中国物理B, 2021, 30(10): 107703-107703.
[5]	Furhaj Ahmed Sheikh, Muhammad Khalid, Muhammad Shahzad Shifa, H M Noor ul Huda Khan Asghar, Sameen Aslam, Ayesha Perveen, Jalil ur Rehman, Muhammad Azhar Khan, Zaheer Abbas Gilani. Effects of bismuth on structural and dielectric properties of cobalt-cadmium spinel ferrites fabricated via micro-emulsion route[J]. 中国物理B, 2019, 28(8): 88701-088701.
[6]	李晓娟, 樊星, 惠增哲, 刘鹏, 龙伟, 方频阳, 南瑞华. Structure instability-induced high dielectric properties in[001]-oriented 0.68Pb(Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ crystals[J]. 中国物理B, 2019, 28(5): 57701-057701.
[7]	Mohd Shkir, V Ganesh, S AlFaify, I S Yahia, Mohd Anis. Structural, vibrational, optical, photoluminescence, thermal, dielectric, and mechanical studies on zinc (tris) thiourea sulfate single crystal: A noticeable effect of organic dye[J]. 中国物理B, 2018, 27(5): 54216-054216.
[8]	Q Mahmood, M Hassan, M A Faridi. Study of magnetic and optical properties of Zn_1-xTM_xTe (TM=Mn, Fe, Co, Ni) diluted magnetic semiconductors: First principle approach[J]. 中国物理B, 2017, 26(2): 27503-027503.
[9]	Levent Paralı, İsrafil Şabikoğlu, Jiri Tucek, Jiri Pechousek, Petr Novak, Jakub Navarik. Dielectric behaviors at microwave frequencies and Mössbauer effects of chalcedony, agate, and zultanite[J]. 中国物理B, 2015, 24(5): 59101-059101.
[10]	Ibrahim Yücedağ, Ahmet Kaya, Şemsettin Altındal, Ibrahim Uslu. Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature[J]. 中国物理B, 2014, 23(4): 47304-047304.
[11]	S. Maletic, D. Maletic, I. Petronijevic, J. Dojcilovic, D. M. Popovic. Dielectric and infrared properties of SrTiO₃ single crystal doped by 3d (V, Mn, Fe, Ni) and 4f (Nd, Sm, Er) ions[J]. 中国物理B, 2014, 23(2): 26102-026102.
[12]	Ahmet Kaya, Sedat Zeyrek, Sait Eren San, Şmsettin Altindal. Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range[J]. 中国物理B, 2014, 23(1): 18506-018506.
[13]	卢明明, 袁杰, 温博, 刘甲, 曹文强, 曹茂盛. Carbon materials with quasi-graphene layers: the dielectric, percolation properties and the electronic transport mechanism[J]. 中国物理B, 2013, 22(3): 37701-037701.
[14]	李兴秀, 陶小马, 陈红梅, 欧阳义芳, 杜勇. Pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations[J]. 中国物理B, 2013, 22(2): 26201-026201.
[15]	T. Ataseven, A. Tataroğlu. Temperature-dependent dielectric properties of Au/Si₃N₄/n-Si (metal–insulator–semiconductor) structures[J]. 中国物理B, 2013, 22(11): 117310-117310.