中国物理B ›› 2017, Vol. 26 ›› Issue (2): 28101-028101.doi: 10.1088/1674-1056/26/2/028101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates

Yu-Bing Wang(王玉冰), Wei-Hong Yin(尹伟红), Qin Han(韩勤), Xiao-Hong Yang(杨晓红), Han Ye(叶焓), Qian-Qian Lv(吕倩倩), Dong-Dong Yin(尹冬冬)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2016-09-08 修回日期:2016-10-20 出版日期:2017-02-05 发布日期:2017-02-05
  • 通讯作者: Qin Han E-mail:hanqin@semi.ac.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402404), the High-Tech Research and Development Program of China (Grant Nos. 2013AA031401, 2015AA016902, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61674136, 61176053, 61274069, and 61435002).

Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substrates

Yu-Bing Wang(王玉冰), Wei-Hong Yin(尹伟红), Qin Han(韩勤), Xiao-Hong Yang(杨晓红), Han Ye(叶焓), Qian-Qian Lv(吕倩倩), Dong-Dong Yin(尹冬冬)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2016-09-08 Revised:2016-10-20 Online:2017-02-05 Published:2017-02-05
  • Contact: Qin Han E-mail:hanqin@semi.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0402404), the High-Tech Research and Development Program of China (Grant Nos. 2013AA031401, 2015AA016902, and 2015AA016904), and the National Natural Science Foundation of China (Grant Nos. 61674136, 61176053, 61274069, and 61435002).

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摘要： Recently, graphene-based photodetectors have been rapidly developed. However, their photoresponsivities are generally low due to the weak optical absorption strength of graphene. In this paper, we fabricate photoconductive multi-layer graphene (MLG) photodetectors on etched silicon-on-insulator substrates. A photoresponsivity exceeding 200 A·W-1 is obtained, which enables most optoelectronic application. In addition, according to the analyses of the high photoresponsivity and long photoresponse time, we conclude that the working mechanism of the device is photoconductive effect. The process of photons conversion into conducting electrons is also described in detail. Finally, according to the distinct difference between the photoresponses at 1550 nm and 808 nm, we estimate that the position of the trapping energy is somewhere between 0.4 eV and 0.76 eV, higher than the Fermi energy of MLG. Our work paves a new way for fabricating the graphene photoconductive photodetectors.

关键词: graphene photodetector, photoconductive effect

Abstract: Recently, graphene-based photodetectors have been rapidly developed. However, their photoresponsivities are generally low due to the weak optical absorption strength of graphene. In this paper, we fabricate photoconductive multi-layer graphene (MLG) photodetectors on etched silicon-on-insulator substrates. A photoresponsivity exceeding 200 A·W-1 is obtained, which enables most optoelectronic application. In addition, according to the analyses of the high photoresponsivity and long photoresponse time, we conclude that the working mechanism of the device is photoconductive effect. The process of photons conversion into conducting electrons is also described in detail. Finally, according to the distinct difference between the photoresponses at 1550 nm and 808 nm, we estimate that the position of the trapping energy is somewhere between 0.4 eV and 0.76 eV, higher than the Fermi energy of MLG. Our work paves a new way for fabricating the graphene photoconductive photodetectors.

Key words: graphene photodetector, photoconductive effect

中图分类号:  (Graphene)

  • 81.05.ue
85.60.Dw (Photodiodes; phototransistors; photoresistors)