中国物理B ›› 2021, Vol. 30 ›› Issue (11): 117506-117506.doi: 10.1088/1674-1056/ac1e1d

所属专题： SPECIAL TOPIC — Two-dimensional magnetic materials and devices

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Observation of magnetoresistance in CrI3/graphene van der Waals heterostructures

Yu-Ting Niu(牛宇婷)1,2, Xiao Lu(鲁晓)1,2, Zhong-Tai Shi(石钟太)1,2, and Bo Peng(彭波)1,2,†   

  1. 1 National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China;
    2 Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
  • 收稿日期:2021-06-01 修回日期:2021-07-15 接受日期:2021-08-17 出版日期:2021-10-13 发布日期:2021-10-27
  • 通讯作者: Bo Peng E-mail:bo_peng@uestc.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 51872039) and Science and Technology Program of Sichuan, China (Grant No. M112018JY0025).

Observation of magnetoresistance in CrI3/graphene van der Waals heterostructures

Yu-Ting Niu(牛宇婷)1,2, Xiao Lu(鲁晓)1,2, Zhong-Tai Shi(石钟太)1,2, and Bo Peng(彭波)1,2,†   

  1. 1 National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China;
    2 Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
  • Received:2021-06-01 Revised:2021-07-15 Accepted:2021-08-17 Online:2021-10-13 Published:2021-10-27
  • Contact: Bo Peng E-mail:bo_peng@uestc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51872039) and Science and Technology Program of Sichuan, China (Grant No. M112018JY0025).

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摘要： Two-dimensional ferromagnetic van der Waals (2D vdW) heterostructures have opened new avenues for creating artificial materials with unprecedented electrical and optical functions beyond the reach of isolated 2D atomic layered materials, and for manipulating spin degree of freedom at the limit of few atomic layers, which empower next-generation spintronic and memory devices. However, to date, the electronic properties of 2D ferromagnetic heterostructures still remain elusive. Here, we report an unambiguous magnetoresistance behavior in CrI3/graphene heterostructures, with a maximum magnetoresistance ratio of 2.8%. The magnetoresistance increases with increasing magnetic field, which leads to decreasing carrier densities through Lorentz force, and decreases with the increase of the bias voltage. This work highlights the feasibilities of applying two-dimensional ferromagnetic vdW heterostructures in spintronic and memory devices.

关键词: two-dimensional ferromagnetic, van der Waals heterostructure, magnetoresistance

Abstract: Two-dimensional ferromagnetic van der Waals (2D vdW) heterostructures have opened new avenues for creating artificial materials with unprecedented electrical and optical functions beyond the reach of isolated 2D atomic layered materials, and for manipulating spin degree of freedom at the limit of few atomic layers, which empower next-generation spintronic and memory devices. However, to date, the electronic properties of 2D ferromagnetic heterostructures still remain elusive. Here, we report an unambiguous magnetoresistance behavior in CrI3/graphene heterostructures, with a maximum magnetoresistance ratio of 2.8%. The magnetoresistance increases with increasing magnetic field, which leads to decreasing carrier densities through Lorentz force, and decreases with the increase of the bias voltage. This work highlights the feasibilities of applying two-dimensional ferromagnetic vdW heterostructures in spintronic and memory devices.

Key words: two-dimensional ferromagnetic, van der Waals heterostructure, magnetoresistance

中图分类号:  (Magnetic properties of nanostructures)

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