中国物理B ›› 2017, Vol. 26 ›› Issue (9): 97202-097202.doi: 10.1088/1674-1056/26/9/097202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Ultrafast interlayer photocarrier transfer in graphene-MoSe2 van der Waals heterostructure

Xin-Wu Zhang(张心悟), Da-Wei He(何大伟), Jia-Qi He(何佳琪), Si-Qi Zhao(赵思淇), Sheng-Cai Hao(郝生财), Yong-Sheng Wang(王永生), Li-Xin Yi(衣立新)   

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
  • 收稿日期:2017-04-28 修回日期:2017-06-11 出版日期:2017-09-05 发布日期:2017-09-05
  • 通讯作者: Li-Xin Yi E-mail:lxyi@bjtu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61275058, 61527817, 61335006, and 61378073), the National Science Foundation, China (Grant No. DMR-1505852), the National Basic Research Program of China (Grant Nos. 2016YFA0202300 and 2016YFA0202302), and Beijing Science and Technology Committee, China (Grant No. Z151100003315006).

Ultrafast interlayer photocarrier transfer in graphene-MoSe2 van der Waals heterostructure

Xin-Wu Zhang(张心悟), Da-Wei He(何大伟), Jia-Qi He(何佳琪), Si-Qi Zhao(赵思淇), Sheng-Cai Hao(郝生财), Yong-Sheng Wang(王永生), Li-Xin Yi(衣立新)   

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
  • Received:2017-04-28 Revised:2017-06-11 Online:2017-09-05 Published:2017-09-05
  • Contact: Li-Xin Yi E-mail:lxyi@bjtu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61275058, 61527817, 61335006, and 61378073), the National Science Foundation, China (Grant No. DMR-1505852), the National Basic Research Program of China (Grant Nos. 2016YFA0202300 and 2016YFA0202302), and Beijing Science and Technology Committee, China (Grant No. Z151100003315006).

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摘要：

We report the fabrication and photocarrier dynamics in graphene-MoSe2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe2 monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe2 of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe2. These results illustrate the potential applications of this material in optoelectronic devices.

关键词: van der Waals heterostructure, transition metal dichalcogenides, molybdenum diselenide, transient absorption

Abstract:

We report the fabrication and photocarrier dynamics in graphene-MoSe2 heterostructures. The samples were fabricated by mechanical exfoliation and manual stacking techniques. Ultrafast laser measurements were performed on the heterostructure and MoSe2 monolayer samples. By comparing the results, we conclude that photocarriers injected in MoSe2 of the heterostructure transfer to graphene on an ultrafast time scale. The carriers in graphene alter the optical absorption coefficient of MoSe2. These results illustrate the potential applications of this material in optoelectronic devices.

Key words: van der Waals heterostructure, transition metal dichalcogenides, molybdenum diselenide, transient absorption

中图分类号:  (Transition-metal compounds)

  • 72.80.Ga
73.50.-h (Electronic transport phenomena in thin films) 78.47.jb (Transient absorption) 78.47.jg (Time resolved reflection spectroscopy)