中国物理B ›› 2013, Vol. 22 ›› Issue (3): 37301-037301.doi: 10.1088/1674-1056/22/3/037301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

蒲红斌, 贺欣, 全汝岱, 曹琳, 陈治明   

  1. Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • 收稿日期:2012-04-20 修回日期:2012-08-30 出版日期:2013-02-01 发布日期:2013-02-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60876050 and 51177134).

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

Pu Hong-Bin (蒲红斌), He Xin (贺欣), Quan Ru-Dai (全汝岱), Cao Lin (曹琳), Chen Zhi-Ming (陈治明)   

  1. Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China
  • Received:2012-04-20 Revised:2012-08-30 Online:2013-02-01 Published:2013-02-01
  • Contact: Pu Hong-Bin E-mail:puhongbin@xaut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60876050 and 51177134).

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摘要： In this paper, we propose the near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi2) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi2/4H-SiC detector, which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015 cm-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side. The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.

关键词: β-FeSi2/4H-SiC, near-infrared photodetector, spectral response

Abstract: In this paper, we propose the near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi2) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi2/4H-SiC detector, which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015 cm-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side. The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.

Key words: β-FeSi2/4H-SiC, near-infrared photodetector, spectral response

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
85.60.Dw (Photodiodes; phototransistors; photoresistors) 71.15.Pd (Molecular dynamics calculations (Car-Parrinello) and other numerical simulations) 61.43.Dq (Amorphous semiconductors, metals, and alloys)