中国物理B ›› 2016, Vol. 25 ›› Issue (5): 58502-058502.doi: 10.1088/1674-1056/25/5/058502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

A novel circuit design for complementary resistive switch-based stateful logic operations

Xiao-Ping Wang(王小平), Lin Chen(陈林), Yi Shen(沈轶), Bo-Wen Xu(徐博文)   

  1. 1. School of Automation, Huazhong University of Science and Technology, Wuhan 430074, China;
    2. Research Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen 518000, China
  • 收稿日期:2015-11-10 修回日期:2016-01-13 出版日期:2016-05-05 发布日期:2016-05-05
  • 通讯作者: Xiao-Ping Wang E-mail:wangxiaoping@hust.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61374150 and 11271146), the State Key Program of the National Natural Science Foundation of China (Grant No. 61134012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130142130012), and the Science and Technology Program of Shenzhen City, China (Grant No. JCYJ20140509162710496).

A novel circuit design for complementary resistive switch-based stateful logic operations

Xiao-Ping Wang(王小平)1,2, Lin Chen(陈林)1,2, Yi Shen(沈轶)1,2, Bo-Wen Xu(徐博文)1,2   

  1. 1. School of Automation, Huazhong University of Science and Technology, Wuhan 430074, China;
    2. Research Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen 518000, China
  • Received:2015-11-10 Revised:2016-01-13 Online:2016-05-05 Published:2016-05-05
  • Contact: Xiao-Ping Wang E-mail:wangxiaoping@hust.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61374150 and 11271146), the State Key Program of the National Natural Science Foundation of China (Grant No. 61134012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130142130012), and the Science and Technology Program of Shenzhen City, China (Grant No. JCYJ20140509162710496).

摘要: Recently, it has been demonstrated that memristors can be utilized as logic operations and memory elements. In this paper, we present a novel circuit design for complementary resistive switch (CRS)-based stateful logic operations. The proposed circuit can automatically write the destructive CRS cells back to the original states. In addition, the circuit can be used in massive passive crossbar arrays which can reduce sneak path current greatly. Moreover, the steps for CRS logic operations using our proposed circuit are reduced compared with previous circuit designs. We validate the effectiveness of our scheme through Hspice simulations on the logic circuits.

关键词: memristor, complementary resistive switch, crossbar arrays, logic circuits

Abstract: Recently, it has been demonstrated that memristors can be utilized as logic operations and memory elements. In this paper, we present a novel circuit design for complementary resistive switch (CRS)-based stateful logic operations. The proposed circuit can automatically write the destructive CRS cells back to the original states. In addition, the circuit can be used in massive passive crossbar arrays which can reduce sneak path current greatly. Moreover, the steps for CRS logic operations using our proposed circuit are reduced compared with previous circuit designs. We validate the effectiveness of our scheme through Hspice simulations on the logic circuits.

Key words: memristor, complementary resistive switch, crossbar arrays, logic circuits

中图分类号:  (Nanoelectronic devices)

  • 85.35.-p
85.25.Hv (Superconducting logic elements and memory devices; microelectronic circuits) 87.85.Qr (Nanotechnologies-design) 84.32.-y (Passive circuit components)