Fractional-dimensional approach for excitons in GaAsfilms on AlxGa1-xAs substrates

doi:10.1088/1674-1056/25/3/037310

中国物理B ›› 2016, Vol. 25 ›› Issue (3): 37310-037310.doi: 10.1088/1674-1056/25/3/037310

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Fractional-dimensional approach for excitons in GaAsfilms on Al_xGa_1-xAs substrates

Zhen-Hua Wu(武振华), Lei Chen(陈蕾), Qiang Tian(田强)

1. School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China;
2. School of Science, Beijing University of Civil Engineering and Architecture, Beijing 100044, China;
3. Department of Physics, Beijing Normal University, Beijing 100875, China

收稿日期:2015-09-01 修回日期:2015-12-11 出版日期:2016-03-05 发布日期:2016-03-05
通讯作者: Qiang Tian E-mail:qtianbnu@sina.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11304011) and the Fundamental Research Funds for the Central Universities, China.

Fractional-dimensional approach for excitons in GaAsfilms on Al_xGa_1-xAs substrates

Zhen-Hua Wu(武振华)¹, Lei Chen(陈蕾)², Qiang Tian(田强)³

1. School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China;
2. School of Science, Beijing University of Civil Engineering and Architecture, Beijing 100044, China;
3. Department of Physics, Beijing Normal University, Beijing 100875, China

Received:2015-09-01 Revised:2015-12-11 Online:2016-03-05 Published:2016-03-05
Contact: Qiang Tian E-mail:qtianbnu@sina.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11304011) and the Fundamental Research Funds for the Central Universities, China.

摘要/Abstract

摘要： Binding energies of excitons in GaAs films on Al_xGa_1-xAs substrates are studied theoretically with the fractional-dimensional approach. In this approach, the real anisotropic “exciton+film” semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exciton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on Al_xGa_1-xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.

关键词: exciton binding energy, GaAs film, fractional-dimensional approach

Abstract: Binding energies of excitons in GaAs films on Al_xGa_1-xAs substrates are studied theoretically with the fractional-dimensional approach. In this approach, the real anisotropic “exciton+film” semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exciton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on Al_xGa_1-xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.

Key words: exciton binding energy, GaAs film, fractional-dimensional approach

中图分类号: (Electrical properties of specific thin films)

73.61.-r

73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)

武振华, 陈蕾, 田强. Fractional-dimensional approach for excitons in GaAsfilms on Al_xGa_1-xAs substrates[J]. 中国物理B, 2016, 25(3): 37310-037310.

Zhen-Hua Wu(武振华), Lei Chen(陈蕾), Qiang Tian(田强). Fractional-dimensional approach for excitons in GaAsfilms on Al_xGa_1-xAs substrates[J]. Chin. Phys. B, 2016, 25(3): 37310-037310.

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Fractional-dimensional approach for excitons in GaAsfilms on Al_xGa_1-xAs substrates

Fractional-dimensional approach for excitons in GaAsfilms on Al_xGa_1-xAs substrates

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