Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition

doi:10.1088/1674-1056/25/1/018102

中国物理B ›› 2016, Vol. 25 ›› Issue (1): 18102-018102.doi: 10.1088/1674-1056/25/1/018102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2015-06-16 修回日期:2015-08-22 出版日期:2016-01-05 发布日期:2016-01-05
通讯作者: Jin-Cheng Zhang E-mail:jchzhang@xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2015-06-16 Revised:2015-08-22 Online:2016-01-05 Published:2016-01-05
Contact: Jin-Cheng Zhang E-mail:jchzhang@xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61306017, 61334002, 61474086, and 11435010) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61306017).

摘要/Abstract

摘要：

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 10¹³ cm^-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm²/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.

关键词: heterostructure, InGaN channel, pulsed metal organic chemical vapor deposition

Abstract:

Key words: heterostructure, InGaN channel, pulsed metal organic chemical vapor deposition

中图分类号: (III-V semiconductors)

81.05.Ea

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

张雅超, 周小伟, 许晟瑞, 陈大正, 王之哲, 汪星, 张金风, 张进成, 郝跃. Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition[J]. 中国物理B, 2016, 25(1): 18102-018102.

Ya-Chao Zhang(张雅超), Xiao-Wei Zhou(周小伟), Sheng-Rui Xu (许晟瑞), Da-Zheng Chen(陈大正), Zhi-Zhe Wang(王之哲), Xing Wang(汪星), Jin-Feng Zhang(张金风), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition[J]. Chin. Phys. B, 2016, 25(1): 18102-018102.

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Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organicchemical vapor deposition

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