中国物理B ›› 2015, Vol. 24 ›› Issue (6): 67305-067305.doi: 10.1088/1674-1056/24/6/067305

所属专题： TOPICAL REVIEW — III-nitride optoelectronic materials and devices

• TOPICAL REVIEW—III-nitride optoelectronic materials and devices • 上一篇    下一篇

Progress in research of GaN-based LEDs fabricated on SiC substrate

徐化勇a b, 陈秀芳a, 彭燕a, 徐明升a c, 沈燕a c, 胡小波a, 徐现刚a c   

  1. a State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
    b School of Physics, Shandong University, Jinan 250100, China;
    c Shandong Inspur Huaguang Optoelectronics Co., Ltd, Jinan 250100, China
  • 收稿日期:2015-01-09 修回日期:2015-04-08 发布日期:2015-06-25
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant No. 2011CB301904) and the National Natural Science Foundation of China (Grant Nos. 11134006 and 61327808).

Progress in research of GaN-based LEDs fabricated on SiC substrate

Xu Hua-Yong (徐化勇)a b, Chen Xiu-Fang (陈秀芳)a, Peng Yan (彭燕)a, Xu Ming-Sheng (徐明升)a c, Shen Yan (沈燕)a c, Hu Xiao-Bo (胡小波)a, Xu Xian-Gang (徐现刚)a c   

  1. a State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
    b School of Physics, Shandong University, Jinan 250100, China;
    c Shandong Inspur Huaguang Optoelectronics Co., Ltd, Jinan 250100, China
  • Received:2015-01-09 Revised:2015-04-08 Published:2015-06-25
  • Contact: Hu Xiao-Bo E-mail:xbhu@sdu.edu.cn
  • About author:73.61.Ey; 85.60.Jb
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant No. 2011CB301904) and the National Natural Science Foundation of China (Grant Nos. 11134006 and 61327808).

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摘要：

The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated. It is found that the AlGaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with AlN buffer layer. To increase the light extraction efficiency of GaN-based LEDs on SiC substrate, flip-chip structure and thin film flip-chip structure were designed and optimized. The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 mA. At 350 mA, the output power, the Vf, the dominant wavelength, and the wall-plug efficiency of the blue LED were 644 mW, 2.95 V, 460 nm, and 63%, respectively.

关键词: SiC, GaN, AlGaN buffer, light emitting diode, flip chip, light extraction efficiency

Abstract:

The influence of buffer layer growth conditions on the crystal quality and residual stress of GaN film grown on silicon carbide substrate is investigated. It is found that the AlGaN nucleation layer with high growth temperature can efficiently decrease the dislocation density and stress of the GaN film compared with AlN buffer layer. To increase the light extraction efficiency of GaN-based LEDs on SiC substrate, flip-chip structure and thin film flip-chip structure were designed and optimized. The fabricated blue LED had a maximum wall-plug efficiency of 72% at 80 mA. At 350 mA, the output power, the Vf, the dominant wavelength, and the wall-plug efficiency of the blue LED were 644 mW, 2.95 V, 460 nm, and 63%, respectively.

Key words: SiC, GaN, AlGaN buffer, light emitting diode, flip chip, light extraction efficiency

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
85.60.Jb (Light-emitting devices)