›› 2015, Vol. 24 ›› Issue (4): 48501-048501.doi: 10.1088/1674-1056/24/4/048501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect

袁吉仁a b, 黄海宾a, 邓新华b, 梁晓军b, 周耐根a, 周浪a   

  1. a Institute of Photovoltaics, Nanchang University, Nanchang 330031, China;
    b School of Science, Nanchang University, Nanchang 330031, China
  • 收稿日期:2014-09-27 修回日期:2014-12-04 出版日期:2015-04-05 发布日期:2015-04-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61464007, 61306084, and 51361022), the Postdoctoral Science Foundation of Jiangxi Province, China (Grant No. 2014KY32), and the Natural Science Foundation of Jiangxi Province, China (Grant No. 20122BAB202002).

Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect

Yuan Ji-Ren (袁吉仁)a b, Huang Hai-Bin (黄海宾)a, Deng Xin-Hua (邓新华)b, Liang Xiao-Jun (梁晓军)b, Zhou Nai-Gen (周耐根)a, Zhou Lang (周浪)a   

  1. a Institute of Photovoltaics, Nanchang University, Nanchang 330031, China;
    b School of Science, Nanchang University, Nanchang 330031, China
  • Received:2014-09-27 Revised:2014-12-04 Online:2015-04-05 Published:2015-04-05
  • Contact: Yuan Ji-Ren, Zhou Lang E-mail:yuanjiren@ncu.edu.cn;lzhou@ncu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61464007, 61306084, and 51361022), the Postdoctoral Science Foundation of Jiangxi Province, China (Grant No. 2014KY32), and the Natural Science Foundation of Jiangxi Province, China (Grant No. 20122BAB202002).

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摘要： The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic (IPV) effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about 1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors.

关键词: impurity photovoltaic effect, responsivity, photodetector

Abstract: The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic (IPV) effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about 1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors.

Key words: impurity photovoltaic effect, responsivity, photodetector

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
88.30.gg (Design and simulation) 85.60.Gz (Photodetectors (including infrared and CCD detectors))