›› 2015, Vol. 24 ›› Issue (3): 37203-037203.doi: 10.1088/1674-1056/24/3/037203

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

李琦a b, 李海鸥a, 唐宁a, 翟江辉a, 宋树祥c   

  1. a Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China;
    b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    c College of Electronic Engineering, Guangxi Normal University, Guilin 541004, China
  • 收稿日期:2014-07-30 修回日期:2014-10-19 出版日期:2015-03-05 发布日期:2015-03-05
  • 基金资助:
    Project supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices of China (Grant No. KFJJ201205), the Department of Education Project of Guangxi Province, China (Grant No. 201202ZD041), the Postdoctoral Science Foundation Project of China (Grant Nos. 2012M521127 and 2013T60566), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

Li Qi (李琦)a b, Li Hai-Ou (李海鸥)a, Tang Ning (唐宁)a, Zhai Jiang-Hui (翟江辉)a, Song Shu-Xiang (宋树祥)c   

  1. a Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China;
    b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
    c College of Electronic Engineering, Guangxi Normal University, Guilin 541004, China
  • Received:2014-07-30 Revised:2014-10-19 Online:2015-03-05 Published:2015-03-05
  • Contact: Li Hai-Ou E-mail:lqmoon@guet.edu.cn
  • Supported by:
    Project supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices of China (Grant No. KFJJ201205), the Department of Education Project of Guangxi Province, China (Grant No. 201202ZD041), the Postdoctoral Science Foundation Project of China (Grant Nos. 2012M521127 and 2013T60566), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

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摘要： A new SOI power device with multi-region high-concentration fixed charge (MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer (BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.

关键词: multi-region high-concentration fixed interface charge, model of breakdown voltage

Abstract: A new SOI power device with multi-region high-concentration fixed charge (MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer (BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.

Key words: multi-region high-concentration fixed interface charge, model of breakdown voltage

中图分类号:  (Elemental semiconductors)

  • 72.80.Cw
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))