Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

doi:10.1088/1674-1056/24/2/027201

›› 2015, Vol. 24 ›› Issue (2): 27201-027201.doi: 10.1088/1674-1056/24/2/027201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

丁进军^{a b}, 吴少兵^a, 杨晓非^a, 朱涛^b

a School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
b Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2014-07-15 修回日期:2014-09-05 出版日期:2015-02-05 发布日期:2015-02-05
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 11079052, 11174354, and 51172080).

Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

Ding Jin-Jun (丁进军)^{a b}, Wu Shao-Bing (吴少兵)^a, Yang Xiao-Fei (杨晓非)^a, Zhu Tao (朱涛)^b

a School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
b Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2014-07-15 Revised:2014-09-05 Online:2015-02-05 Published:2015-02-05
Contact: Zhu Tao E-mail:tzhu@aphy.iphy.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2012CB933102) and the National Natural Science Foundation of China (Grant Nos. 11079052, 11174354, and 51172080).

摘要/Abstract

摘要： An obvious weak localization correction to anomalous Hall conductance (AHC) in very thin CoFeB film is reported. We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness. When the film is thicker than 3 nm, the side jump mechanism dominates and the weak localization to AHC vanishes. For very thin CoFeB films, both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect, and the weak localization correction to AHC is observed.

关键词: anomalous Hall effect, weak localization, CoFeB thin films

Abstract: An obvious weak localization correction to anomalous Hall conductance (AHC) in very thin CoFeB film is reported. We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness. When the film is thicker than 3 nm, the side jump mechanism dominates and the weak localization to AHC vanishes. For very thin CoFeB films, both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect, and the weak localization correction to AHC is observed.

Key words: anomalous Hall effect, weak localization, CoFeB thin films

中图分类号: (Localization effects (Anderson or weak localization))

72.15.Rn

75.47.-m (Magnetotransport phenomena; materials for magnetotransport) 73.61.At (Metal and metallic alloys)

丁进军, 吴少兵, 杨晓非, 朱涛. Localization correction to the anomalous Hall effect in amorphous CoFeB thin films[J]. , 2015, 24(2): 27201-027201.

Ding Jin-Jun (丁进军), Wu Shao-Bing (吴少兵), Yang Xiao-Fei (杨晓非), Zhu Tao (朱涛). Localization correction to the anomalous Hall effect in amorphous CoFeB thin films[J]. Chin. Phys. B, 2015, 24(2): 27201-027201.

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Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

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