中国物理B ›› 2015, Vol. 24 ›› Issue (1): 17101-017101.doi: 10.1088/1674-1056/24/1/017101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Tb doping induced enhancement of anomalous Hall effect in NiFe films

朱嘉鹏a, 马丽a, 周仕明a, 苗君b, 姜勇b   

  1. a Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China;
    b State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
  • 收稿日期:2014-07-30 修回日期:2014-09-07 出版日期:2015-01-05 发布日期:2015-01-05
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11374227, 51331004, 51171129, and 51201114), the Shanghai Science and Technology Committee, China (Grant Nos. 0252nm004, 13XD1403700, and 13520722700), and the National Basic Research Program of China (Grant No. 2015CB921501).

Tb doping induced enhancement of anomalous Hall effect in NiFe films

Zhu Jia-Peng (朱嘉鹏)a, Ma Li (马丽)a, Zhou Shi-Ming (周仕明)a, Miao Jun (苗君)b, Jiang Yong (姜勇)b   

  1. a Shanghai Key Laboratory of Special Artificial Microstructure, Pohl Institute of Solid State Physics, and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China;
    b State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
  • Received:2014-07-30 Revised:2014-09-07 Online:2015-01-05 Published:2015-01-05
  • Contact: Ma Li E-mail:77shibihan@tongji.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11374227, 51331004, 51171129, and 51201114), the Shanghai Science and Technology Committee, China (Grant Nos. 0252nm004, 13XD1403700, and 13520722700), and the National Basic Research Program of China (Grant No. 2015CB921501).

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摘要：

Tbx(Ni0.8Fe0.2)1-x films with x≤0.14 are fabricated and the anomalous Hall effect is studied. The intrinsic anomalous Hall conductivity and the extrinsic one from the impurity and phonon induced scattering both increase with increasing x. The enhancement of the intrinsic anomalous Hall conductivity is ascribed to both the weak spin-orbit coupling enhancement and the Fermi level shift. The enhancement of the extrinsic term comes from the changes of both Fermi level and impurity distribution. In contrast, the in-plane and the out-of-plane uniaxial anisotropies in the TbNiFe films change little with x. The enhancement of the Hall angle by Tb doping is helpful for practical applications of the Hall devices.

关键词: anomalous Hall effect, magnetic transition alloys, heavy rare earth element, spin-orbit coupling

Abstract:

Tbx(Ni0.8Fe0.2)1-x films with x≤0.14 are fabricated and the anomalous Hall effect is studied. The intrinsic anomalous Hall conductivity and the extrinsic one from the impurity and phonon induced scattering both increase with increasing x. The enhancement of the intrinsic anomalous Hall conductivity is ascribed to both the weak spin-orbit coupling enhancement and the Fermi level shift. The enhancement of the extrinsic term comes from the changes of both Fermi level and impurity distribution. In contrast, the in-plane and the out-of-plane uniaxial anisotropies in the TbNiFe films change little with x. The enhancement of the Hall angle by Tb doping is helpful for practical applications of the Hall devices.

Key words: anomalous Hall effect, magnetic transition alloys, heavy rare earth element, spin-orbit coupling

中图分类号:  (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)

  • 71.70.Ej
73.50.Jt (Galvanomagnetic and other magnetotransport effects) 75.47.Np (Metals and alloys) 75.50.Bb (Fe and its alloys)