中国物理B ›› 2015, Vol. 24 ›› Issue (10): 108801-108801.doi: 10.1088/1674-1056/24/10/108801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Analysis of the interdigitated back contact solar cells: The n-type substrate lifetime and wafer thickness

张巍a, 陈晨a, 贾锐a, 孙昀a, 邢钊a, 金智a, 刘新宇a, 刘晓文b   

  1. a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    b Xinjiang Vocation & Technical College of Construction, Wulumuqi 830026, China
  • 收稿日期:2015-01-09 修回日期:2015-03-18 出版日期:2015-10-05 发布日期:2015-10-05
  • 基金资助:
    Project supported by the Chinese Ministry of Science and Technology Projects (Grant Nos. 2012AA050304 and Y0GZ124S01), the National Natural Science Foundation of China (Grant Nos. 11104319, 11274346, 51202285, 51402347, and 51172268), and the Fund of the Solar Energy Action Plan from the Chinese Academy of Sciences (Grant Nos. Y3ZR044001 and Y2YF014001).

Analysis of the interdigitated back contact solar cells: The n-type substrate lifetime and wafer thickness

Zhang Wei (张巍)a, Chen Chen (陈晨)a, Jia Rui (贾锐)a, Sun Yun (孙昀)a, Xing Zhao (邢钊)a, Jin Zhi (金智)a, Liu Xin-Yu (刘新宇)a, Liu Xiao-Wen (刘晓文)b   

  1. a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
    b Xinjiang Vocation & Technical College of Construction, Wulumuqi 830026, China
  • Received:2015-01-09 Revised:2015-03-18 Online:2015-10-05 Published:2015-10-05
  • Contact: Jia Rui E-mail:Jiarui@ime.ac.cn
  • Supported by:
    Project supported by the Chinese Ministry of Science and Technology Projects (Grant Nos. 2012AA050304 and Y0GZ124S01), the National Natural Science Foundation of China (Grant Nos. 11104319, 11274346, 51202285, 51402347, and 51172268), and the Fund of the Solar Energy Action Plan from the Chinese Academy of Sciences (Grant Nos. Y3ZR044001 and Y2YF014001).

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摘要： The n-type silicon integrated-back contact (IBC) solar cell has attracted much attention due to its high efficiency, whereas its performance is very sensitive to the wafer of low quality or the contamination during high temperature fabrication processing, which leads to low bulk lifetime τbulk . In order to clarify the influence of bulk lifetime on cell characteristics, two-dimensional (2D) TCAD simulation, combined with our experimental data, is used to simulate the cell performances, with the wafer thickness scaled down under various τbulk conditions. The modeling results show that for the IBC solar cell with high τbulk, (such as 1 ms-2 ms), its open-circuit voltage Voc almost remains unchanged, and the short-circuit current density Jsc monotonically decreases as the wafer thickness scales down. In comparison, for the solar cell with low τbulk (for instance, <500 s) wafer or the wafer contaminated during device processing, the Voc increases monotonically but the Jsc first increases to a maximum value and then drops off as the wafer's thickness decreases. A model combing the light absorption and the minority carrier diffusion is used to explain this phenomenon. The research results show that for the wafer with thinner thickness and high bulk lifetime, the good light trapping technology must be developed to offset the decrease in Jsc.

关键词: lifetime, wafer thickness, interdigitated back contact solar cells, technology computer-aided design

Abstract: The n-type silicon integrated-back contact (IBC) solar cell has attracted much attention due to its high efficiency, whereas its performance is very sensitive to the wafer of low quality or the contamination during high temperature fabrication processing, which leads to low bulk lifetime τbulk . In order to clarify the influence of bulk lifetime on cell characteristics, two-dimensional (2D) TCAD simulation, combined with our experimental data, is used to simulate the cell performances, with the wafer thickness scaled down under various τbulk conditions. The modeling results show that for the IBC solar cell with high τbulk, (such as 1 ms-2 ms), its open-circuit voltage Voc almost remains unchanged, and the short-circuit current density Jsc monotonically decreases as the wafer thickness scales down. In comparison, for the solar cell with low τbulk (for instance, <500 s) wafer or the wafer contaminated during device processing, the Voc increases monotonically but the Jsc first increases to a maximum value and then drops off as the wafer's thickness decreases. A model combing the light absorption and the minority carrier diffusion is used to explain this phenomenon. The research results show that for the wafer with thinner thickness and high bulk lifetime, the good light trapping technology must be developed to offset the decrease in Jsc.

Key words: lifetime, wafer thickness, interdigitated back contact solar cells, technology computer-aided design

中图分类号:  (Modeling and analysis)

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