中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107701-107701.doi: 10.1088/1674-1056/24/10/107701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

The interface density dependence of the electrical properties of 0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3-0.45PbTiO3 multilayer thin films

李雪冬a b, 刘洪b, 吴家刚b, 刘刚a, 肖定全b, 朱建国b   

  1. a College of Physics and Electric Engineering, Mianyang Normal University, Mianyang 621000, China;
    b College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
  • 收稿日期:2015-01-26 修回日期:2015-04-07 出版日期:2015-10-05 发布日期:2015-10-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60771016) and the Scientific Research Foundation of Mianyang Normal University, China (Grant No. QD2013A07).

The interface density dependence of the electrical properties of 0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3-0.45PbTiO3 multilayer thin films

Li Xue-Dong (李雪冬)a b, Liu Hong (刘洪)b, Wu Jia-Gang (吴家刚)b, Liu Gang (刘刚)a, Xiao Ding-Quan (肖定全)b, Zhu Jian-Guo (朱建国)b   

  1. a College of Physics and Electric Engineering, Mianyang Normal University, Mianyang 621000, China;
    b College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China
  • Received:2015-01-26 Revised:2015-04-07 Online:2015-10-05 Published:2015-10-05
  • Contact: Zhu Jian-Guo E-mail:nic0400@scu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60771016) and the Scientific Research Foundation of Mianyang Normal University, China (Grant No. QD2013A07).

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摘要： The 0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3 -0.45PbTiO3 multilayer thin films ((PSTT10/45)n, n=1-6, 10) are deposited on SiO2/Si(100) substrates by radio frequency magnetron sputtering technique with LaNiO3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 m-1, the film shows an optimized dielectric property (high dielectric constant, εr=765, lowest dielectric loss, tanδ =0.041, at 1 kHz) and ferroelectric property (highest remnant polarization, 2Pr=36.9 C/cm2, low coercive field, 2Ec=71.9 kV/cm). The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.

关键词: ferroelectric multilayer thin films, electrical properties, interface density

Abstract: The 0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3 -0.45PbTiO3 multilayer thin films ((PSTT10/45)n, n=1-6, 10) are deposited on SiO2/Si(100) substrates by radio frequency magnetron sputtering technique with LaNiO3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 m-1, the film shows an optimized dielectric property (high dielectric constant, εr=765, lowest dielectric loss, tanδ =0.041, at 1 kHz) and ferroelectric property (highest remnant polarization, 2Pr=36.9 C/cm2, low coercive field, 2Ec=71.9 kV/cm). The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.

Key words: ferroelectric multilayer thin films, electrical properties, interface density

中图分类号:  (Other ferroelectric films)

  • 77.55.fp
77.22.-d (Dielectric properties of solids and liquids) 77.80.bn (Strain and interface effects)