Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

doi:10.1088/1674-1056/24/10/107301

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107301-107301.doi: 10.1088/1674-1056/24/10/107301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

Güven Turgut^a, Adem Koçyiğit^b, Erdal Sönmez^c

a Erzurum Technical University, Science Faculty, Department of Basic Sciences, Erzurum 25240, Turkey;
b Igdir University, Engineering Faculty, Department of Electrical Electronic Engineering, Igdir 7600, Turkey;
c Ataturk University, Kazım Karabekir Education Faculty, Department of Physics, Erzurum 25240, Turkey

收稿日期:2015-04-01 修回日期:2015-05-02 出版日期:2015-10-05 发布日期:2015-10-05

Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

Güven Turgut^a, Adem Koçyiğit^b, Erdal Sönmez^c

a Erzurum Technical University, Science Faculty, Department of Basic Sciences, Erzurum 25240, Turkey;
b Igdir University, Engineering Faculty, Department of Electrical Electronic Engineering, Igdir 7600, Turkey;
c Ataturk University, Kazım Karabekir Education Faculty, Department of Physics, Erzurum 25240, Turkey

Received:2015-04-01 Revised:2015-05-02 Online:2015-10-05 Published:2015-10-05
Contact: Güven Turgut, Adem Koçyiğit E-mail:guventrgt@gmail.com;adem.kocyigit@igdir.edu.tr

摘要/Abstract

摘要： The Pr and Ta separately doped FTO (10 at.% F incorporated SnO₂) films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO (FTO) films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction (XRD) measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has (200) preferential orientation, but this orientation changes to (211) direction with Pr and Ta doping ratio increasing. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible (UV-Vis) spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications.

关键词: Pr-doped FTO, Ta-doped FTO, spray pyrolysis, tin oxide, thin films, double doping

Abstract: The Pr and Ta separately doped FTO (10 at.% F incorporated SnO₂) films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO (FTO) films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction (XRD) measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has (200) preferential orientation, but this orientation changes to (211) direction with Pr and Ta doping ratio increasing. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible (UV-Vis) spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications.

Key words: Pr-doped FTO, Ta-doped FTO, spray pyrolysis, tin oxide, thin films, double doping

中图分类号: (Surface states, band structure, electron density of states)

73.20.At

78.20.-e (Optical properties of bulk materials and thin films) 78.68.+m (Optical properties of surfaces)

Güven Turgut, Adem Koçyiğit, Erdal Sönmez. Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis[J]. 中国物理B, 2015, 24(10): 107301-107301.

Güven Turgut, Adem Koçyiğit, Erdal Sönmez. Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis[J]. Chin. Phys. B, 2015, 24(10): 107301-107301.

参考文献 48

[1]	Ellmer K 2012 Nat. Photon. 6 809
[2]	Zhang S W, Fan G H, He M and Zhang T 2014 Chin. Phys. B 23 066301
[3]	Nakao S, Hirose Y, Fukumura T and Hasegawa T 2014 Jpn. J. Appl. Phys. 53 05FX04
[4]	Van Daal H J 1968 Solid State Commun. 6 5
[5]	Fonstad C G and Rediker R H 1971 J. Appl. Phys. 42 2911
[6]	Lee S W, Kim Y W and Chen H 2001 Appl. Phys. Lett. 78 350
[7]	Turgut G, Sonmez E and Duman S 2015 Mater. Sci. Semicond. Process. 30 233
[8]	Mahato S and Kar A K 2015 J. Electroanalytical. Chem. 742 23
[9]	Slassi A 2015 Mater. Sci. Semicond. Process. 32 100
[10]	Zhi X, Zhao G, Zhu T and Li Y 2008 Surf. Interface Anal. 40 67
[11]	Lee G H 2013 Mater. Trans. 54 2159
[12]	Zhou Q, Wu S and Miao D H 2011 Adv. Mater. Res. 150 1043
[13]	Luo Z H, Tang D S, Hai K, Yu F, Chen Y Q, He X W, Peng Y H, Yuan H J and Yuan Y 2010 Chin. Phys. B 19 026102
[14]	Moholkar A V, Pawar S M, Rajpure K Y, Almari S N, Patil P S and Bhosale C H 2008 Sol. Energy Mater. Sol. Cells 92 1439
[15]	Kumar R, Khanna A and Sastry V S 2012 Vacuum 86 1380
[16]	Ravaro L P, Scalvi L V A and Boratto M H 2015 Appl. Phys. A: Mater. Sci. Process. 118 1419
[17]	Elangovan E and Ramamurthi K 2004 Appl. Surf. Sci. 249 183
[18]	Turgut G, Tatar D, Duzgun B 2012 EÜFBED-Erzincan Univ. J. Sci. Technol. 5 13
[19]	Gordillo G, Moreno L C, Cruz W and Teheran P 1994 Thin Solid Films 252 61
[20]	Smith A, Laurent J M, Smith D S, Bonnet J P and Clemente R R 1995 Thin Solid Films 266 20
[21]	Agashe C, Takwale M G, Bhide V G, Mahamuni S and Kulkarni S K 1991 J. Appl Phys. 70 7382
[22]	Elangovan E and Ramamurthi K 2005 Thin Solid Films 476 231
[23]	Babar A R, Shinde S S, Moholkar A V, Bhosale C H, Kim J H and Rajpure K Y 2011 J. Alloys Compd. 509 3108
[24]	Chacko S, Philip N S, Gopchandran K G, Koshy P and Vaidyan V K 2008 Appl. Surf. Sci. 254 2179
[25]	Li W Q, Ma S Y, Li Y F, Li X B, Wang C Y, Yang X H, Cheng L, Mao Y Z, Luo J, Gengzang D J, Wan G X and Xu X L 2014 J. Alloys Compd. 605 80
[26]	Moholkar A V, Pawar S M, Rajpure K Y and Bhosale C H 2007 Mater. Lett. 61 3030
[27]	Turgut G, Keskenler E F, Aydın S, Sonmez E, Dogan S, Duzgun B and Ertugrul M 2013 Superlattices and Microstructures 56 107
[28]	Battal A, Tatar D, Kocyigit A and Duzgun B 2014 J. Ovonic Res. 10 23
[29]	Serin T, Yildiz A, Serin N, Yildirim N, Ozyurt F and Kasap M 2010 J. Electron. Mater. 39 1152
[30]	Cho H J, Seo Y J, Kim G W, Park K Y, Heo S N and Koo B H 2013 Mater. Res. Soc. Korea 23 435
[31]	Aouaj M A, Diaz R, Belayachi A, Rueda F and Abd-Lefdil M 2009 Mater. Res. Bull. 44 1458
[32]	Turgut G, Keskenler E F, Aydın S, Yılmaz M, Doğan S and Düzgün B 2013 Phys. Scr. 87 035602
[33]	Dhanam M, Manoj P K, Rajeev R and Prabhu R 2005 J. Cryst. Growth 280 425
[34]	Turgut G, Sonmez E, Aydın S, Dilber R and Turgut U 2014 Ceram. Int. 40 12891
[35]	Filho F M, Simoes A Z, Ries A, Souza E C, Perazolli L, Cilense M, Longo E and Varela J A 2005 Ceram. Int. 31 399
[36]	Nakao S, Naoomi Y, Hitosugi T, Shimada T and Hasegawa T 2010 Appl. Phys. Express 3 031102
[37]	Elangovan E, Shivashankar S A and Ramamurthi K 2005 J. Crystal Growth 276 215
[38]	Turgut G, Tatar D and Düzgün B 2013 Asian J. Chem. 25 245
[39]	Ravichandran K, Muruganantham G, Sakthivel B and Philominathan P 2009 J. Ovonic Res. 5 63
[40]	Keskenler E F, Turgut G and Dogan S 2012 Superlattices and Microstructures 52 107
[41]	Kim H, Auyeung R C Y and Piqué A 2008 Thin Solid Films 516 5052
[42]	Batzill M and Diebold U 2005 Prog. Surf. Sci. 79 47
[43]	Burstein E 1954 Phys. Rev. 93 632
[44]	Pejova B 2010 Mater. Chem. Phys. 119 367
[45]	Turgut G and Sonmez E 2014 Superlattices and Microstructures 69 175
[46]	Mahr H 1962 Phys. Rev. 125 1510
[47]	Keskenler E F, Turgut G, Aydın S, Dilber R and Turgut U 2013 J. Ovonic Res. 9 61
[48]	Thangaraju B 2002 Thin Solid Films 402 71

Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 48

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)^†. Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs[J]. 中国物理B, 2022, 31(9): 96101-096101.
[2]	Zhenzhen Wang(王珍珍), Weiheng Qi(戚炜恒), Jiachang Bi(毕佳畅), Xinyan Li(李欣岩), Yu Chen(陈雨), Fang Yang(杨芳), Yanwei Cao(曹彦伟), Lin Gu(谷林), Qinghua Zhang(张庆华), Huanhua Wang(王焕华), Jiandi Zhang(张坚地), Jiandong Guo(郭建东), and Xiaoran Liu(刘笑然). Anomalous strain effect in heteroepitaxial SrRuO₃ films on (111) SrTiO₃ substrates[J]. 中国物理B, 2022, 31(12): 126801-126801.
[3]	Wan-Liang Liu(刘万良), Ying Chen(陈莹), Tao Li(李涛), Zhi-Tang Song(宋志棠), and Liang-Cai Wu(吴良才). Effect of Mo doping on phase change performance of Sb₂Te₃[J]. 中国物理B, 2021, 30(8): 86801-086801.
[4]	Hussein T. Salloom, Rushdi I. Jasim, Nadir Fadhil Habubi, Sami Salman Chiad, M Jadan, and Jihad S. Addasi. Gas sensor using gold doped copper oxide nanostructured thin films as modified cladding fiber[J]. 中国物理B, 2021, 30(6): 68505-068505.
[5]	Jun Pang(庞军), Xi Zhang(张析), Limeng Shen(申笠蒙), Jiayin Xu(徐家胤), Ya Nie(聂娅), and Gang Xiang(向钢). Synthesis and thermoelectric properties of Bi-doped SnSe thin films[J]. 中国物理B, 2021, 30(11): 116302-116302.
[6]	Bin Liu(刘斌) and Hong Zhou(周洪). Scalable fabrication of Bi₂O₂Se polycrystalline thin film for near-infrared optoelectronic devices applications[J]. 中国物理B, 2021, 30(10): 106803-106803.
[7]	Ateyyah M Al-Baradi, Fatimah A Altowairqi, A A Atta, Ali Badawi, Saud A Algarni, Abdulraheem S A Almalki, A M Hassanien, A Alodhayb, A M Kamal, M M El-Nahass. Structural and optical characteristic features of RF sputtered CdS/ZnO thin films[J]. 中国物理B, 2020, 29(8): 80702-080702.
[8]	牛磊, 陈益敏, 沈祥, 徐铁峰. Thermal stability of magnetron sputtering Ge-Ga-S films[J]. 中国物理B, 2020, 29(8): 87803-087803.
[9]	姚建可, 叶凡, 范平. Optical and electrical properties of InGaZnON thin films[J]. 中国物理B, 2020, 29(1): 18105-018105.
[10]	崔利军, 张平祥, 李金山, 闫果, 冯勇, 刘向宏, 李建峰, 潘熙峰, 杨帆, 张胜楠, 马晓波, 刘国庆. Heat treatment on phase evolution of Bi-2223 precursor powder prepared by spray pyrolysis method[J]. 中国物理B, 2019, 28(4): 47401-047401.
[11]	陈书真, 宋力刚, 张鹏, 曹兴忠, 于润升, 王宝义, 魏龙, 张仁刚. Influence of low-temperature sulfidation on the structure of ZnS thin films[J]. 中国物理B, 2019, 28(2): 24214-024214.
[12]	杨运坤, 修发贤, 王枫秋, 王军, 施毅. Electrical transport and optical properties of Cd₃As₂ thin films[J]. 中国物理B, 2019, 28(10): 107502-107502.
[13]	Qeemat Gul, 何为, 李岩, 孙瑞, 李娜, 杨旭, 李阳, 弓子召, 谢宗凯, 张向群, 成昭华. Thickness dependent manipulation of uniaxial magnetic anisotropy in Fe-thin films by oblique deposition[J]. 中国物理B, 2018, 27(9): 97504-097504.
[14]	韦宁宁, 杨振, 潘宏波, 张凡, 刘永兴, 王荣平, 沈祥, 戴世勋, 聂秋华. Variable angle spectroscopic ellipsometry and its applications in determining optical constants of chalcogenide glasses in infrared[J]. 中国物理B, 2018, 27(6): 67802-067802.
[15]	王泽松, 肖仁政, 邹长伟, 谢伟, 田灿鑫, 薛书文, 刘贵昂, 付德君. Off-stoichiometry indexation of BiFeO₃ thin film on silicon by Rutherford backscattering spectrometry[J]. 中国物理B, 2018, 27(4): 47901-047901.