An application of half-terrace model to surface ripening of non-bulk GaAs layers

doi:10.1088/1674-1056/23/4/046806

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 46806-046806.doi: 10.1088/1674-1056/23/4/046806

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

An application of half-terrace model to surface ripening of non-bulk GaAs layers

刘珂, 郭祥, 周清, 张毕禅, 罗子江, 丁召

College of Electronics and Information, Guizhou University, Guiyang 550025, China

收稿日期:2013-07-31 修回日期:2013-11-05 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60866001) and the Doctorate Foundation of the Education Ministry of China (Grant No. 20105201110003).

An application of half-terrace model to surface ripening of non-bulk GaAs layers

Liu Ke (刘珂), Guo Xiang (郭祥), Zhou Qing (周清), Zhang Bi-Chan (张毕禅), Luo Zi-Jiang (罗子江), Ding Zhao (丁召)

College of Electronics and Information, Guizhou University, Guiyang 550025, China

Received:2013-07-31 Revised:2013-11-05 Online:2014-04-15 Published:2014-04-15
Contact: Ding Zhao E-mail:zding@gzu.edu.cn
About author:68.37.Ef; 81.05.Ea; 81.40.Ef; 66.30.Pa
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60866001) and the Doctorate Foundation of the Education Ministry of China (Grant No. 20105201110003).

摘要/Abstract

摘要： In order to predict the actual quantity of non-bulk GaAs layers after long-time homoepitaxy on GaAs (001) by theoretical calculation, a half-terrace diffusion model based on thermodynamics is used to calculate the ripening time of GaAs layers to form a flat morphology in annealing. To verify the accuracy of the calculation, real space scanning tunneling microscopy images of GaAs surface after different annealing times are obtained and the roughness of the GaAs surface is measured. The results suggest that the half terrace model is an accurate method with a relative error of about 4.1%.

关键词: scanning tunneling microscopy, Ⅲ-Ⅴ semiconductors, annealing, diffusion in nanoscale solids

Abstract: In order to predict the actual quantity of non-bulk GaAs layers after long-time homoepitaxy on GaAs (001) by theoretical calculation, a half-terrace diffusion model based on thermodynamics is used to calculate the ripening time of GaAs layers to form a flat morphology in annealing. To verify the accuracy of the calculation, real space scanning tunneling microscopy images of GaAs surface after different annealing times are obtained and the roughness of the GaAs surface is measured. The results suggest that the half terrace model is an accurate method with a relative error of about 4.1%.

Key words: scanning tunneling microscopy, Ⅲ-Ⅴ semiconductors, annealing, diffusion in nanoscale solids

中图分类号: (Scanning tunneling microscopy (including chemistry induced with STM))

68.37.Ef

81.05.Ea (III-V semiconductors) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization) 66.30.Pa (Diffusion in nanoscale solids)

刘珂, 郭祥, 周清, 张毕禅, 罗子江, 丁召. An application of half-terrace model to surface ripening of non-bulk GaAs layers[J]. 中国物理B, 2014, 23(4): 46806-046806.

Liu Ke (刘珂), Guo Xiang (郭祥), Zhou Qing (周清), Zhang Bi-Chan (张毕禅), Luo Zi-Jiang (罗子江), Ding Zhao (丁召). An application of half-terrace model to surface ripening of non-bulk GaAs layers[J]. Chin. Phys. B, 2014, 23(4): 46806-046806.

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An application of half-terrace model to surface ripening of non-bulk GaAs layers

An application of half-terrace model to surface ripening of non-bulk GaAs layers

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