中国物理B ›› 2014, Vol. 23 ›› Issue (2): 26802-026802.doi: 10.1088/1674-1056/23/2/026802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

AA bilayer graphene on Si-terminated SiO2 under electric field

刘海龙a, 刘艳b, 汪涛c, 敖志敏d   

  1. a Department of Radiology, Zhejiang Province Tongde Hospital, Zhejiang Province, Hangzhou 310012, China;
    b Department of Radiology, Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 312000, China;
    c College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
    d School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia
  • 收稿日期:2012-11-07 修回日期:2013-07-23 出版日期:2013-12-12 发布日期:2013-12-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176101), the Ph. D. Programs Foundation of the Ministry of Education of China (Grant No. 20120101120156), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2012FZA4016).

AA bilayer graphene on Si-terminated SiO2 under electric field

Liu Hai-Long (刘海龙)a, Liu Yan (刘艳)b, Wang Tao (汪涛)c, Ao Zhi-Min (敖志敏)d   

  1. a Department of Radiology, Zhejiang Province Tongde Hospital, Zhejiang Province, Hangzhou 310012, China;
    b Department of Radiology, Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 312000, China;
    c College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
    d School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia
  • Received:2012-11-07 Revised:2013-07-23 Online:2013-12-12 Published:2013-12-12
  • Contact: Wang Tao E-mail:twang@zju.edu.cn
  • About author:68.43.Bc; 68.43.Fg; 81.05.Uw; 73.21.Ac
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176101), the Ph. D. Programs Foundation of the Ministry of Education of China (Grant No. 20120101120156), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2012FZA4016).

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摘要： The AA-stacked bilayer graphene/α-SiO2 (001) interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles. AA-stacked bilayer graphene is slightly mis-oriented on SiO2 substrate without electric field and the band gap is 0.557 eV. However, as F increases, the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and, finally, transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree.

关键词: interface, graphene, oxide

Abstract: The AA-stacked bilayer graphene/α-SiO2 (001) interfaces with Si terminated atoms are studied in the presence of an electric field F with different intensities by first principles. AA-stacked bilayer graphene is slightly mis-oriented on SiO2 substrate without electric field and the band gap is 0.557 eV. However, as F increases, the AA-stacked bilayer graphene has its layers gradually vertically shifted with each other and, finally, transfers into AB-stacked bilayer graphene and the band gap reduces to 0.252 eV under 0.015 Hartree.

Key words: interface, graphene, oxide

中图分类号:  (Ab initio calculations of adsorbate structure and reactions)

  • 68.43.Bc
68.43.Fg (Adsorbate structure (binding sites, geometry)) 73.21.Ac (Multilayers)