Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

doi:10.1088/1674-1056/23/10/107301

›› 2014, Vol. 23 ›› Issue (10): 107301-107301.doi: 10.1088/1674-1056/23/10/107301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

安兴涛^{a b}

a School of Sciences, Hebei University of Science and Technology, Shijiazhuang 050018, China;
b Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China

收稿日期:2014-03-03 修回日期:2014-04-21 出版日期:2014-10-15 发布日期:2014-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11104059 and 61176089).

Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

An Xing-Tao (安兴涛)^{a b}

a School of Sciences, Hebei University of Science and Technology, Shijiazhuang 050018, China;
b Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China

Received:2014-03-03 Revised:2014-04-21 Online:2014-10-15 Published:2014-10-15
Contact: An Xing-Tao E-mail:anxt@hku.hk
About author:73.25.+i; 73.23.-b; 85.35.Be
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11104059 and 61176089).

摘要/Abstract

摘要： The effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulator is theoretically investigated. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic barrier, the transport processes can be divided into three kinds: the total, partial, and blockade transmission mechanisms. The bias voltage can give rise to the transition of the transport processes from partial to blockade transmission mechanisms, which results in a considerable effect of negative differential conductance. With appropriate structural parameters, the current-voltage characteristics show that the minimum value of the current can reach to zero in a wide range of the bias voltage, and then a large peak-to-valley current ratio can be obtained.

关键词: topological insulator, negative differential conductance, ferromagnetic barrier

Abstract: The effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulator is theoretically investigated. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic barrier, the transport processes can be divided into three kinds: the total, partial, and blockade transmission mechanisms. The bias voltage can give rise to the transition of the transport processes from partial to blockade transmission mechanisms, which results in a considerable effect of negative differential conductance. With appropriate structural parameters, the current-voltage characteristics show that the minimum value of the current can reach to zero in a wide range of the bias voltage, and then a large peak-to-valley current ratio can be obtained.

Key words: topological insulator, negative differential conductance, ferromagnetic barrier

中图分类号: (Surface conductivity and carrier phenomena)

73.25.+i

73.23.-b (Electronic transport in mesoscopic systems) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))

安兴涛. Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator[J]. , 2014, 23(10): 107301-107301.

An Xing-Tao (安兴涛). Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator[J]. Chin. Phys. B, 2014, 23(10): 107301-107301.

参考文献 0


[6]	Mondal S, Sen D, Sengupta K and Shankar R 2010 Phys. Rev. Lett. 104 046403 doi: 10.1103/PhysRevLett.104.046403

[7]	Wu Z, Peeters F M and Chang K 2010 Phys. Rev. B 82 115211 doi: 10.1103/PhysRevB.82.115211

[1]	Xi H, White R M, Mao S, Gao Z, Yang Z and Murdock E 2001 Phys. Rev. B 64 184416 doi: 10.1103/PhysRevB.64.184416

[8]	Yokoyama T, Tanaka Y and Nagaosa N 2010 Phys. Rev. B 81 121401 doi: 10.1103/PhysRevB.81.121401

[2]	Pina E, Prados C and Hernando A 2004 Phys. Rev. B 69 052402 doi: 10.1103/PhysRevB.69.052402

[9]	Zhang Y and Zhai F 2010 Appl. Phys. Lett. 96 172109 doi: 10.1063/1.3421536

[3]	Brems S, Buntinx D, Temst K, Van Haesendonck C, Radu F and Zabel H 2005 Phys. Rev. Lett. 95 157202 doi: 10.1103/PhysRevLett.95.157202

[10]	Kong B D, Semenov Y G, Krowne C M and Kim K W 2011 Appl. Phys. Lett. 98 243112 doi: 10.1063/1.3600330

[4]	Brems S, Temst K and Van Haesendonck C 2007 Phys. Rev. Lett. 99 067201 doi: 10.1103/PhysRevLett.99.067201

[5]	Polisetty S, Sahoo S and Binek C 2007 Phys. Rev. B 76 184423 doi: 10.1103/PhysRevB.76.184423

[11]	Zhai F and Mu P 2011 Appl. Phys. Lett. 98 022107 doi: 10.1063/1.3543899

[12]	Yuan J H, Cheng Z, Zhang J J, Zeng Q J and Zhang J P 2012 Chin. Phys. B 21 047203

[13]	Mizuta H and Tanoue T 1995 The Physics and Applications of Resonant Tunneling Diodes (Cambridge: Cambridge University Press)

[14]	Tsu R 1973 Appl. Phys. Lett. 22 562 doi: 10.1063/1.1654509

[6]	Chan M K, Parker J S, Crowell P A and Leighton C 2008 Phys. Rev. B 77 014420 doi: 10.1103/PhysRevB.77.014420

[7]	Mishra S K, Radu F, Dürr H A and Eberhardt W 2009 Phys. Rev. Lett. 102 177208 doi: 10.1103/PhysRevLett.102.177208

[8]	Shi Z, Du J, Chantrell R W, Mangin S and Zhou S M 2011 Appl. Phys. Lett. 98 122507 doi: 10.1063/1.3569140

[9]	Keller J, Miltényi P, Beschoten B, Güntherodt G, Nowak U and Usadel K D 2002 Phys. Rev. B 66 014431 doi: 10.1103/PhysRevB.66.014431

[10]	Binek C 2004 Phys. Rev. B 70 014421 doi: 10.1103/PhysRevB.70.014421

[15]	Sollner T C L G 1983 Appl. Phys. Lett. 43 588 doi: 10.1063/1.94434

[16]	Dragoman D and Dragoman M 2007 Appl. Phys. Lett. 90 143111 doi: 10.1063/1.2719670

[11]	Hoffmann A 2004 Phys. Rev. Lett. 93 097203 doi: 10.1103/PhysRevLett.93.097203

[17]	Do V N 2008 Appl. Phys. Lett. 92 216101 doi: 10.1063/1.2937437

[12]	Qiu X P, Yang D Z, Zhou S M, Chantrell R, O'Grady K, Nowak U, Du J, Bai X J and Sun L 2008 Phys. Rev. Lett. 101 147207 doi: 10.1103/PhysRevLett.101.147207

[18]	Wang Z F, Li Q, Shi Q W, Wang X, Yang J, Hou J G and Chen J 2008 Appl. Phys. Lett. 92 133114 doi: 10.1063/1.2904701

[13]	Fulara H, Chaudhary S and Kashyap S C 2012 Appl. Phys. Lett. 101 142408 doi: 10.1063/1.4757603

[19]	Ren H, Li Q, Luo Y and Yang J 2009 Appl. Phys. Lett. 94 173110 doi: 10.1063/1.3126451

[14]	Shi Z, Qiu X P, Zhou S M, Bai X J and Du J 2008 Appl. Phys. Lett. 93 222504 doi: 10.1063/1.3039059

[20]	Do V N and Dollfus P 2010 J. Appl. Phys. 107 063705 doi: 10.1063/1.3340834

[15]	Maity T, Goswami S, Bhattacharya D and Roy S 2013 Phys. Rev. Lett. 110 107201 doi: 10.1103/PhysRevLett.110.107201

[21]	Ferreira G J, Leuenberger M N, Loss D and Egues J C 2011 Phys. Rev. B 84 125453 doi: 10.1103/PhysRevB.84.125453

[16]	Harres A and Geshev J 2011 J. Phys.: Condens. Matter 23 216003 doi: 10.1088/0953-8984/23/21/216003

[22]	Nguyen V H, Mazzamuto F, Saint-Martin J, Bournel A and Dollfus P 2011 Appl. Phys. Lett. 99 042105 doi: 10.1063/1.3616143

[17]	Kaeswurm B and O'Grady K 2011 Appl. Phys. Lett. 99 222508 doi: 10.1063/1.3661172

[23]	Zhao P, Liu D S, Li S J and Chen G 2012 Chem. Phys. Lett. 554 172 doi: 10.1016/j.cplett.2012.10.045

[24]	Song Y, Wu H C and Guo Y 2013 Appl. Phys. Lett. 102 093118 doi: 10.1063/1.4794952

[18]	Ali M, Adie P, Marrows C H, Greig D, Hickey B J and Stamps R L 2007 Nat. Mater. 6 70 doi: 10.1038/nmat1809

[25]	Maciejko J, Kim E A and Qi X L 2010 Phys. Rev. B 82 195409 doi: 10.1103/PhysRevB.82.195409

[26]	Wu Z, Peeters F M and Chang K 2011 Appl. Phys. Lett. 98 162101 doi: 10.1063/1.3581887

Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

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