Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

doi:10.1088/1674-1056/22/9/097101

中国物理B ›› 2013, Vol. 22 ›› Issue (9): 97101-097101.doi: 10.1088/1674-1056/22/9/097101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

张楷亮^a, 刘凯^a, 王芳^{a b}, 尹富红^a, 韦晓莹^b, 赵金石^a

a School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China;
b School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China

收稿日期:2013-01-29 修回日期:2013-03-04 出版日期:2013-07-26 发布日期:2013-07-26
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274113 and 11204212), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064), the Natural Science Foundation of Tianjin City, China (Grant Nos. 10SYSYJC27700, 13JCYBJC15700, and 10ZCKFGX01200), and the Science and Technology Development Funds of Universities and Colleges of Tianjin City, China (Grant No. 20100703).

Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

Zhang Kai-Liang (张楷亮)^a, Liu Kai (刘凯)^a, Wang Fang (王芳)^{a b}, Yin Fu-Hong (尹富红)^a, Wei Xiao-Ying (韦晓莹)^b, Zhao Jin-Shi (赵金石)^a

a School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China;
b School of Electronics Information Engineering, Tianjin University, Tianjin 300072, China

Received:2013-01-29 Revised:2013-03-04 Online:2013-07-26 Published:2013-07-26
Contact: Wang Fang E-mail:fwang75@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274113 and 11204212), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064), the Natural Science Foundation of Tianjin City, China (Grant Nos. 10SYSYJC27700, 13JCYBJC15700, and 10ZCKFGX01200), and the Science and Technology Development Funds of Universities and Colleges of Tianjin City, China (Grant No. 20100703).

摘要/Abstract

摘要： We investigate the resistive switching characteristics of a Cu/VO_x/W structure. The VO_x film is deposited by radio-frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VO_x sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the growth pattern of the conducting filaments. Additionally, the related conducting mechanism is discussed in detail.

关键词: resistive switching, vanadium oxide, conducting filament, magnetron sputtering

Abstract: We investigate the resistive switching characteristics of a Cu/VO_x/W structure. The VO_x film is deposited by radio-frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VO_x sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the growth pattern of the conducting filaments. Additionally, the related conducting mechanism is discussed in detail.

Key words: resistive switching, vanadium oxide, conducting filament, magnetron sputtering

中图分类号: (Metal-insulator transitions and other electronic transitions)

71.30.+h

85.30.-z (Semiconductor devices)

张楷亮, 刘凯, 王芳, 尹富红, 韦晓莹, 赵金石. Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory[J]. 中国物理B, 2013, 22(9): 97101-097101.

Zhang Kai-Liang (张楷亮), Liu Kai (刘凯), Wang Fang (王芳), Yin Fu-Hong (尹富红), Wei Xiao-Ying (韦晓莹), Zhao Jin-Shi (赵金石). Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory[J]. Chin. Phys. B, 2013, 22(9): 97101-097101.

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Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

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