Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

doi:10.1088/1674-1056/22/3/038401

中国物理B ›› 2013, Vol. 22 ›› Issue (3): 38401-038401.doi: 10.1088/1674-1056/22/3/038401

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

黄达^{a b}, 吴俊杰^b, 唐玉华^b

a State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China;
b School of Computer, National University of Defense Technology, Changsha 410073, China

收稿日期:2012-05-14 修回日期:2012-08-21 出版日期:2013-02-01 发布日期:2013-02-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60921062).

Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

Huang Da (黄达)^{a b}, Wu Jun-Jie (吴俊杰)^b, Tang Yu-Hua (唐玉华)^b

a State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China;
b School of Computer, National University of Defense Technology, Changsha 410073, China

Received:2012-05-14 Revised:2012-08-21 Online:2013-02-01 Published:2013-02-01
Contact: Huang Da E-mail:huangda1109@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60921062).

摘要/Abstract

摘要： With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor brings much attention to this study. Those researches focus on resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are present. We give the prospect of different materials used in resistive RAM on account of resistive switching mechanisms, which are applied to explain their resistive switchings.

关键词: resistive random-access memory, resistive switching mechanism, circuit model

Abstract: With the progress of the semiconductor industry, the resistive random-access memory (RAM) has drawn increasing attention. The discovery of the memristor brings much attention to this study. Those researches focus on resistive switching characteristics of different materials and the analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models. Finally, simulations are present. We give the prospect of different materials used in resistive RAM on account of resistive switching mechanisms, which are applied to explain their resistive switchings.

Key words: resistive random-access memory, resistive switching mechanism, circuit model

中图分类号: (Passive circuit components)

84.32.-y

89.20.Ff (Computer science and technology) 84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

黄达, 吴俊杰, 唐玉华. Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory[J]. 中国物理B, 2013, 22(3): 38401-038401.

Huang Da (黄达), Wu Jun-Jie (吴俊杰), Tang Yu-Hua (唐玉华). Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory[J]. Chin. Phys. B, 2013, 22(3): 38401-038401.

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Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

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