An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect

doi:10.1088/1674-1056/26/5/058501

中国物理B ›› 2017, Vol. 26 ›› Issue (5): 58501-058501.doi: 10.1088/1674-1056/26/5/058501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect

He Guan(关赫), Hui Guo(郭辉)

1 Northwestern Polytechnical University, Xi'an 710072, China;
2 School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China

收稿日期:2016-12-17 修回日期:2016-02-04 出版日期:2017-05-05 发布日期:2017-05-05
通讯作者: Hui Guo E-mail:Guohui@mail.xidian.edu.cn

An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect

He Guan(关赫)¹, Hui Guo(郭辉)²

1 Northwestern Polytechnical University, Xi'an 710072, China;
2 School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China

Received:2016-12-17 Revised:2016-02-04 Online:2017-05-05 Published:2017-05-05
Contact: Hui Guo E-mail:Guohui@mail.xidian.edu.cn

摘要/Abstract

摘要： An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function D(ωτ_i) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect. The enhanced model with D(ωτ_i) can accurately characterize the key S parameters of InAs/AlSb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D(ωτ_i) is helpful in further improving the modeling accuracy degree.

关键词: InAs/AlSb HFET, impact ionization, frequency dependency, small-signal equivalent circuit model

Abstract: An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function D(ωτ_i) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect. The enhanced model with D(ωτ_i) can accurately characterize the key S parameters of InAs/AlSb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D(ωτ_i) is helpful in further improving the modeling accuracy degree.

Key words: InAs/AlSb HFET, impact ionization, frequency dependency, small-signal equivalent circuit model

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Tv (Field effect devices) 84.40.-x (Radiowave and microwave (including millimeter wave) technology)

关赫, 郭辉. An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect[J]. 中国物理B, 2017, 26(5): 58501-058501.

He Guan(关赫), Hui Guo(郭辉). An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect[J]. Chin. Phys. B, 2017, 26(5): 58501-058501.

参考文献 23

[1]	Moschetti G, Wadefalk N, Nilsson P A, Abbasi M, Desplanque L, Wallart X and Grahn J 2012 IEEE Microw. Wirel. Compon. Lett. 22 144
[2]	Moschetti G, Wadefalk N, Nilsson P A, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S and Grahn J 2011 Solid State Electron 64 47
[3]	Malmkvist M, Lefebvre E, Borg M, Desplanque L, Wallart X, Dambrine G, Bollaert S and Grahn J 2008 IEEE Trans. Microw. Theory Tech. 56 2685
[4]	Mark Isler and Klaus Schüneman 2004 IEEE Trans. Microwave Theory Tech. 52 858
[5]	Vasallo B G, Rodilla H and Gonzalez T 2010 J. Appl. Phys. 108 094505
[6]	Vasallo B G, Rodilla H, Gonzalez T, Moschetti G, Grahn J and Mateos J 2012 Semicond. Sci. Technol. 27 065018
[7]	Reuter R, Agethen M, Auer U, Van Waasen S, Peters D, Brockerhoff W and Tegude J 1997 IEEE Journals & Magazines 45 977
[8]	Isle M 2002 Solid-State Electronics 46 1587
[9]	Guan H, Lv H l, Guo H and Zhang Y M 2015 J. Appl. Phys. 118 195702
[10]	Dambrine G, Cappy A, Heliodore F and Playez E 1998 IEEE Trans. Microw Theory Techn. 36 1151
[11]	Ranjit S and Christopher S M 1998 Electron Devices 45 1165
[12]	Rorsman N, Garcia M, Karlsson C and Zirath H 1996 IEEE Trans. Electron Devices 44 432
[13]	Alt A R, Marti D and Bolognesi C R 2013 IEEE Microw. Mag. 14 83
[14]	Ma B Y, Bergman J, Chen P, Hacker J B, Sullivan G, Nagy G and Brar B 2006 IEEE Trans. Microwave Theory Tech. 54 4448
[15]	Borg M, Lefebvre E, Malmkvist M, Desplanque L, Wallart X, Roelens Y, Dambrine G, Cappy A, Bollaert S and Grahn J 2008 Solid State Electron. 52 775
[16]	Anwar J and Günter K 2005 IEEE Trans. Electron Devices 53 3440
[17]	Lefebvre E, Malmkvist M, Borg M, Desplanque L, Wallart X, Dambrine G, Bollaert S and Grahn J 2009 Electron Devices 56 1904
[18]	Van Niekerk C, Meyer P, Schreurs M P and Winson P B 2000 IEEE Trans. Microwave Theory Tech. 48 777
[19]	Arai T, Sawada K, Okamoto N, Makiyama K, Takahashi T and Hara N 2003 IEEE Trans. Electron Devices 50 1189
[20]	Bolognesi C R, Dvorak M W and Chow D H 1999 IEEE Trans. Electron Devices 46 826
[21]	He Y L, Hao Y and Zhang X F 2014 Chin. Phys. Lett. 31 128501
[22]	Chen H F 2014 Chin. Phys. B 23 128502
[23]	Hu X R and Lü R 2014 Chin. Phys. B 23 128501

An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect

An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect

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