中国物理B ›› 2013, Vol. 22 ›› Issue (10): 107201-107201.doi: 10.1088/1674-1056/22/10/107201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiNx multilayers

李悰, 徐骏, 李伟, 江小帆, 孙胜华, 徐岭, 陈坤基   

  1. National Laboratory of Solid State Microstructures, School of Physics, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • 收稿日期:2013-02-21 修回日期:2013-04-19 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2013CB632101), the National Natural Science Foundation of China (Grant Nos. 11274155 and 61036001), and Priority Academic Program Development of Jiangsu Higher Education Institutions, Jiangsu Province, China.

Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiNx multilayers

Li Cong (李悰), Xu Jun (徐骏), Li Wei (李伟), Jiang Xiao-Fan (江小帆), Sun Sheng-Hua (孙胜华), Xu Ling (徐岭), Chen Kun-Ji (陈坤基)   

  1. National Laboratory of Solid State Microstructures, School of Physics, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
  • Received:2013-02-21 Revised:2013-04-19 Online:2013-08-30 Published:2013-08-30
  • Contact: Xu Jun E-mail:junxu@nju.edu.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2013CB632101), the National Natural Science Foundation of China (Grant Nos. 11274155 and 61036001), and Priority Academic Program Development of Jiangsu Higher Education Institutions, Jiangsu Province, China.

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摘要： Nanocrystalline Ge (nc-Ge) single layers and nc-Ge/SiNx multilayers are prepared by laser annealing amorphous Ge (a-Ge) films and a-Ge/SiNx multilayers. The microstructures as well as the electrical properties of laser-crystallized samples are systematically studied by using various techniques. It is found that the optical band gap of nc-Ge film is reduced compared with its amorphous counterpart. The formed nc-Ge film is of p-type, and the dark conductivity is enhanced by 6 orders for an nc-Ge single layer and 4 orders for a multilayer. It is suggested that the carrier transport mechanism is dominant by the thermally activation process via the nanocrystal, which is different from the thermally annealed nc-Ge sample at an intermediate temperature. The carrier mobility of nc-Ge film can reach as high as about 39.4 cm2·V-1·s-1, which indicates their potential applications in future nano-devices.

关键词: nanocrystalline Ge, microstructure, carrier transport, mobility

Abstract: Nanocrystalline Ge (nc-Ge) single layers and nc-Ge/SiNx multilayers are prepared by laser annealing amorphous Ge (a-Ge) films and a-Ge/SiNx multilayers. The microstructures as well as the electrical properties of laser-crystallized samples are systematically studied by using various techniques. It is found that the optical band gap of nc-Ge film is reduced compared with its amorphous counterpart. The formed nc-Ge film is of p-type, and the dark conductivity is enhanced by 6 orders for an nc-Ge single layer and 4 orders for a multilayer. It is suggested that the carrier transport mechanism is dominant by the thermally activation process via the nanocrystal, which is different from the thermally annealed nc-Ge sample at an intermediate temperature. The carrier mobility of nc-Ge film can reach as high as about 39.4 cm2·V-1·s-1, which indicates their potential applications in future nano-devices.

Key words: nanocrystalline Ge, microstructure, carrier transport, mobility

中图分类号:  (Mobility edges; hopping transport)

  • 72.20.Ee
73.63.-b (Electronic transport in nanoscale materials and structures) 78.20.-e (Optical properties of bulk materials and thin films) 78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters)