中国物理B ›› 2013, Vol. 22 ›› Issue (10): 107106-107106.doi: 10.1088/1674-1056/22/10/107106
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
N. R. Senthil Kumara, A. John Peterb, Chang Kyoo Yooc
N. R. Senthil Kumara, A. John Peterb, Chang Kyoo Yooc
摘要: The magnetic field-dependent heavy hole excitonic states in a strained Ga0.2In0.8As/GaAs quantum dot are investigated by taking into account the anisotropy, non-parabolicity of the conduction band, and the geometrical confinement. The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured. The interband optical transition energy as a function of geometrical confinement is computed in the presence of a magnetic field. The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied. The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Ga0.2In0.8As/GaAs quantum dot. Heavy hole excitonic absorption spectra, the changes in refractive index, and the third-order susceptibility of third-order harmonic generation are investigated in the Ga0.2In0.8As/GaAs quantum dot. The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system.
中图分类号: (Landau levels)