中国物理B ›› 2012, Vol. 21 ›› Issue (6): 67701-067701.doi: 10.1088/1674-1056/21/6/067701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

梁伟正a, 吉彦达a, 南天翔a, 黄江a, 曾慧中a, 杜辉a, 陈充林b c, 林媛a   

  1. a. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China, Chengdu 610054, China;
    b. Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA;
    c. Department of Physics and the Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, USA
  • 收稿日期:2012-02-22 修回日期:2012-02-28 出版日期:2012-05-01 发布日期:2012-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11028409 and 60976061) and the Fundamental Research Funds for the Central Universities of China (Grant No. ZYGX2009Z0001).

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

Liang Wei-Zheng(梁伟正)a), Ji Yan-Da(吉彦达) a), Nan Tian-Xiang(南天翔)a), Huang Jiang(黄江)a), Zeng Hui-Zhong(曾慧中)a), Du Hui(杜辉)a), Chen Chong-Lin(陈充林)b)c), and Lin Yuan(林媛)a)†   

  1. a. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China, Chengdu 610054, China;
    b. Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA;
    c. Department of Physics and the Texas Center for Superconductivity, University of Houston, Houston, Texas 77204, USA
  • Received:2012-02-22 Revised:2012-02-28 Online:2012-05-01 Published:2012-05-01
  • Contact: Lin Yuan E-mail:linyuan@uestc.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11028409 and 60976061) and the Fundamental Research Funds for the Central Universities of China (Grant No. ZYGX2009Z0001).

摘要: Barium titanate (BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition (PAD) technique. The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion. Crystal structures, surface morphologies, and dielectric performance were examined and compared for BTO thin films annealed under different temperatures. Correlations between the fabrication conditions, microstructures, and dielectric properties were discussed. BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr ~ 400 and tanδ <0.025 at 100 kHz. The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.

关键词: polymer assisted deposition, barium titanate, nickel foils, thin films, thermodynamics, dielectric properties

Abstract: Barium titanate (BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition (PAD) technique. The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion. Crystal structures, surface morphologies, and dielectric performance were examined and compared for BTO thin films annealed under different temperatures. Correlations between the fabrication conditions, microstructures, and dielectric properties were discussed. BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with εr ~ 400 and tanδ <0.025 at 100 kHz. The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications.

Key words: polymer assisted deposition, barium titanate, nickel foils, thin films, thermodynamics, dielectric properties

中图分类号:  (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)

  • 77.84.-s
77.55.fe (BaTiO3-based films) 77.55.Nv (Multiferroic/magnetoelectric films)