中国物理B ›› 2012, Vol. 21 ›› Issue (6): 67702-067702.doi: 10.1088/1674-1056/21/6/067702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

彭静a b, 吴传菊b, 孙堂友c, 赵文宁c, 吴小锋c, 刘文c, 王双保c, 揭泉林a, 徐智谋c   

  1. a. Department of Physics, Wuhan University, Wuhan 430072, China;
    b. College of Sciences, Wuhan University of Science and Technology, Wuhan 430081, China;
    c. Wuhan National Laboratory for Optoelectronics & College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
  • 收稿日期:2011-12-08 修回日期:2012-02-05 出版日期:2012-05-01 发布日期:2012-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076042 and 60607006), the Special Project on Development of National Key Scientific Instruments and Equipment of China (Grant No. 2011YQ16000205), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A106).

Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

Peng Jing(彭静)a)b)†, Wu Chuan-Ju(吴传菊) b), Shen Tang-You(孙堂友)c), Zhao Wen-Ning(赵文宁)c), Wu Xiao-Feng(吴小锋) c), Liu Wen(刘文)c) Wang Shuang-Bao(王双保)c), Jie Quan-Lin(揭泉林) a), and Xu Zhi-Mou(徐智谋)c)   

  1. a. Department of Physics, Wuhan University, Wuhan 430072, China;
    b. College of Sciences, Wuhan University of Science and Technology, Wuhan 430081, China;
    c. Wuhan National Laboratory for Optoelectronics & College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
  • Received:2011-12-08 Revised:2012-02-05 Online:2012-05-01 Published:2012-05-01
  • Contact: Peng Jing E-mail:jingmathfly@yahoo.com.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61076042 and 60607006), the Special Project on Development of National Key Scientific Instruments and Equipment of China (Grant No. 2011YQ16000205), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A106).

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摘要： BaTiO3 (BTO) ferroelectric thin films are prepared by the sol-gel method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied. The photoluminescence (PL) of the BTO ferroelectric film is attributed to the structure. The ferroelectric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139, 0.1627). EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectric thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 ℃-400 ℃). It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.

关键词: InGaN/GaN multiple quantum well light emitting diodes, ferroelectric film, BaTiO3, optical properties

Abstract: BaTiO3 (BTO) ferroelectric thin films are prepared by the sol-gel method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied. The photoluminescence (PL) of the BTO ferroelectric film is attributed to the structure. The ferroelectric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139, 0.1627). EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectric thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 ℃-400 ℃). It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.

Key words: InGaN/GaN multiple quantum well light emitting diodes, ferroelectric film, BaTiO3, optical properties

中图分类号:  (Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)

  • 77.84.-s
78.20.-e (Optical properties of bulk materials and thin films) 81.16.Be (Chemical synthesis methods)