The electrical properties of sulfur-implanted cubic boron nitride thin films

doi:10.1088/1674-1056/21/4/047202

中国物理B ›› 2012, Vol. 21 ›› Issue (4): 47202-047202.doi: 10.1088/1674-1056/21/4/047202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

邓金祥,秦扬,孔乐,杨学良,李廷,赵卫平,杨萍

收稿日期:2011-07-19 修回日期:2011-10-08 出版日期:2012-02-29 发布日期:2012-02-29
通讯作者: 邓金祥,jdeng@bjut.edu.cn E-mail:jdeng@bjut.edu.cn

The electrical properties of sulfur-implanted cubic boron nitride thin films

Deng Jin-Xiang(邓金祥)^†, Qin Yang(秦扬), Kong Le(孔乐), Yang Xue-Liang(杨学良), Li Ting(李廷), Zhao Wei-Ping(赵卫平), and Yang Ping(杨萍)

College of Applied Sciences, Beijing University of Technology, Beijing 100124, China

Received:2011-07-19 Revised:2011-10-08 Online:2012-02-29 Published:2012-02-29
Contact: Deng Jin-Xiang,jdeng@bjut.edu.cn E-mail:jdeng@bjut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60876006 and 60376007), the Natural Science Foundation of Beijing, China (Grant No. 4072007), the Scientific Research Program of Beijing Municipal Commission of Education, China (Grant No. KM200910005018), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, and the Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality.

摘要/Abstract

Abstract: Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, and the implantation dose is between 10¹⁵ ions/cm² and 10¹⁶ ions/cm². The doped c-BN thin films are then annealed at a temperature between 400 ℃ and 800 ℃. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.

Key words: cubic boron nitride, ion implantation, surface resistivity, activation energy

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

邓金祥,秦扬,孔乐,杨学良,李廷,赵卫平,杨萍. [J]. 中国物理B, 2012, 21(4): 47202-047202.

Deng Jin-Xiang(邓金祥), Qin Yang(秦扬), Kong Le(孔乐), Yang Xue-Liang(杨学良), Li Ting(李廷), Zhao Wei-Ping(赵卫平), and Yang Ping(杨萍) . The electrical properties of sulfur-implanted cubic boron nitride thin films[J]. Chin. Phys. B, 2012, 21(4): 47202-047202.

[1]	Wentorf R H 1962 J. Chem. Phys. 36 1990
[2]	Chen G H, Wang Y Y, Zhang F Q and Wu J H 1980 Wuli (Physics) 9 502 (in Chinese)
[3]	He Y L, Chen G H and Zhang F Q 1989 Physics of Amorphous Semiconductor (Beijing: Higher Education Press) p. 221 (in Chinese)
[4]	Huang Z, Wu L L, Li B, Hao X, He J X, Feng L H, Li W, Zhang J Q and Cai Y P 2010 Chin. Phys. B 19 127204
[5]	Yang Y, Li S T, Ding C and Cheng P F 2011 Chin. Phys. B 20 025201
[6]	Mishima O, Tanaka J, Yamaoka S and Fukunaga O 1987 Science 238 181
[7]	He B, Zhang W J, Zou Y S, Chong Y M, Ye Q, Ji A L, Yang Y, Bello I, Lee S T and Chen G H 2008 Appl. Phys. Lett. 92 102108

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The electrical properties of sulfur-implanted cubic boron nitride thin films

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